21EL2 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R | | [\ JJQ Q y P V H F -U H F BAND LOW NOISE AM PLIFIER APPLICATIO NS. • • U n it in mm Including Two Devices in SM6 Super Mini Type with 6Leads Low Noise Figure, High Gain. NF = l.ld B , |S2i e|2 = 13dB (f= lG H z)

sot marking code ZS

Abstract: transistor bf 290
Contextual Info: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration

Contextual Info: MÛi€Sr! Preliminary Specifications M an A M P com pany 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .0 0 SOT-23 Features • 1 5 dB N o ise F ig u ie a t 0 5 m A • 13 dB G a i l a t 1 G H z • 14 GH z fp • Low C o s tP la s tic P a ck a g e

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS. +as 2 .5 -C l3 High Gain |S21eP = 12dB Typ. Low Noise Figure NF = 2.3dB (Typ.), f= lG H z + CX25 1.3-ais High f'p -HO dd +I E£ fp = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)

ESASE

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2 S Q 5 Q Q 7 TENTATIVE DATA U nit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F = l.ld B , |S2 le |2 = 14dB f= lG H z M A X IM U M RATIN G S (T a = 25°C)

transistor HD marking

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE HN3 • ■ ■ r13F SILICON NPN EPITAXIAL PLANAR TYPE 'm m tr ■ w ■ V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

transistor marking c3n

Contextual Info: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

Flcl03

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, H igh G ain. N F = 1.8dB, |S 2lel2 = ?.5dB f = 2GHz M A X IM U M R A TIN G S (Ta = 25°C) CHARACTERISTIC

2sc4857

Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Contextual Info: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation

2N2857 Model

Abstract: 2N3570
Contextual Info: n i> — • sb4E5m D D o m s a i mmc — Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description n / A ~ c o r i s e m i c o n D t BRl n g t o n r - ’J i- « ' Nominal fT - 1.8 GHz Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency > 1 0 MHz to 600 MHz

transistor K 2056

Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Contextual Info: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

80500 TRANSISTOR

Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562
Contextual Info: NE687 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz 4 ! • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SO T 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)

TRANSISTOR 1443

Abstract: marking f2 sot363 f2 sot-363 marking VU SOT363
Contextual Info: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation ijy io? vu» 6 54 Matting en SOT-363 pockog* {fo r «am pi« W ti c o rm p o ró t to pin 1 of tHric« 12 3 Olrtcttow of Unrnllng

Contextual Info: TOSHIBA HN3C13FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 3 F II • ■ u 'm mm ■ mm ■ 'mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)