21KHZ AMPLIFIER Search Results

Contextual Info: Panasonic GaAs MMICs GN01039B GaAs 1C Unit : mm For transmitting preamplifier of cellular phone • Features • Low-noise amplifier with AGC • Single, positive power supply Absolute Maximum Ratings Ta= 25°C Param eter Pow er supply voltage Symbol Rating

GN01039B

Abstract: 21kHz amplifier 21KHz 11441
Contextual Info: Panasonic Ga A s MMI C s GN01039B GaAs 1C Unit : mm For transm itting pream plifier of cellular phone • Features IE • Low-noise amplifier with AGC • Single, positive power supply 3 tn Absolute Maximum Ratings Ta= 25°C Param eter Pow er supply voltage

21KHz

Contextual Info: Panasonic GaAs MMICs GN01068B GaAs IC with b u ilt-in fe rro e le ctric For p re a m p lifie r o f th e PDC tra n s m ittin g se ctio n • Features Gain control amplifier for 1.5GHz Low distortion Small package: Mini 6pin ■ A b s o lu te M a xim u m R atings (Ta = 25°C)

12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM 100w audio CLASS D amplifier diagram 150w mosfet audio amplifier HIP4080 amplifier circuit diagram class D 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram mosfet 100w 12v amplifier 100w audio amplifier circuit diagram class D 100w audio amplifier circuit diagram class b
Contextual Info: S E M I C O N D U C T O R HIP4080AEVAL2 High Power Digital Audio Amplifier Evaluation Board for HIP4080A January 1998 Features Description • 150W at 86% Efficiency The HIP4080AEVAL2 Evaluation Board is a 150W Class D Audio Amplifier utilizing Harris’ HIP4080AIP Full Bridge

HIP4080 amplifier circuit diagram class D

Abstract: HIP4080AIP 150w mosfet audio amplifier 100w audio CLASS D amplifier diagram 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM 100w audio amplifier circuit diagram class D 100w mosfet audio amplifier circuit diagram HIP4080 100w class-d audio amplifier circuit diagram
Contextual Info: HIP4080AEVAL2 High Power Digital Audio Amplifier Evaluation Board for HIP4080A January 1998 Features Description • 150W at 86% Efficiency The HIP4080AEVAL2 Evaluation Board is a 150W Class D Audio Amplifier utilizing Intersil HIP4080AIP Full Bridge MOSFET driver in conjunction with RFP22N10 MOSFETs.

8BCV

Contextual Info: TAIYO YUDEN- •UGJD-3.5SA H Y B R I D ICs HIGH FREQUENCY HYBBID ICs High Frequency Power Amplifier FEATURES OUTLINE DIMENSIONS This is a s u p e r c o m p a c t , h igh p e r f o r m a n c e a m p lif ie r f o r 1.5 G H z band . RF power It is d e s ig n e d to m in im in e

12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM 100w audio amplifier circuit diagram class D 150w mosfet audio amplifier HIP4080 amplifier circuit diagram class D 100w audio amplifier circuit diagram 12v class d amplifier 100W 100w mosfet audio amplifier circuit diagram 100w low cost audio amplifier circuit diagram HIP4080 CLASS D
Contextual Info: S E M I C O N D U C T O R HIP4080AEVAL2 High Power Digital Audio Amplifier Evaluation Board for HIP4080A January 1996 Features Description • 150W at 86% Efficiency The HIP4080AEVAL2 Evaluation Board is a 150W Class D Audio Amplifier utilizing Harris’ HIP4080AIP Full Bridge

6L31

Abstract: GN01068B
Contextual Info: GaAs MMICs GN01068B GaAs IC with built-in ferroelectric For preamplifier of the PDC transmitting section unit: mm • Features +0.2 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.5 –0.05 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 6 5 2 4 3 1.45±0.1 0.65±0.15

Contextual Info: Panasonic GaAs MMICs GN01067B GaAs IC with b u ilt-in fe rro e le ctric For th e p re a m p lifie r o f th e tra n s m ittin g s e c tio n in a c e llu la r p h o n e • Features 0 Amplifier with high-gain AGC function 0 Low distortion 0 Small package: Mini 6pin

pi15dbm

Contextual Info: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment IE • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz 3 tn

Contextual Info: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz Absolute Maximum Ratings

Contextual Info: Panasonic GaAs MMICs GN01038B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone IE • Features • Low-noise amplifier with AGC • Single, positive power supply • Low distortion characteristics ■EE- Absolute Maximum Ratings

GN01037B

Contextual Info: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment IE • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz 3 tn

Contextual Info: Panasonic GaAs MMICs GN01038B GaAs IC with b u ilt-in fe rro e le ctric For th e p re a m p lifie r o f th e tra n s m ittin g s e c tio n in a c e llu la r p h o n e • Features 0 Low-noise amplifier with AGC 0 Operated by a single positive power supply

Contextual Info: Panasonic GaAs MMICs GN01037B GaAs IC with b u ilt-in fe rro e le ctric For the preamplifier of the transmitting section in a cellular phone unit: mm O th e r c o m m u n ic a tio n e q u ip m e n t • • Features Low-noise amplifier with AGC Operated by a single positive power supply

GN01038B

Contextual Info: Panasonic GaAs MMICs GN01038B GaAs IC with built-in ferroelectric Unit : mm For transm itting pream plifier of cellular phone I Features IE Low-noise amplifier with AGC Single, positive power supply Low distortion characteristics 3 -EE- Absolute Maximum Ratings (Ta=

Contextual Info: GaAs MMICs GN01067B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 6 0.5 –0.05 ● Amplifier with high-gain AGC function

Contextual Info: HA-5340 HARRIS S E M I C O N D U C T O R High Speed, Low Distortion, Precision Monolithic Sample and Hold Amplifier March 1993 Features Description • Fast Acquisition Time 0.01% .700ns • Fast Hold Mode Settling Time (0.01%).200ns

Contextual Info: m H A -ttd O H a r r is S E M I C O N D U C T O R M * M • 700ns, Low Distortion, Precision Sample and Hold Amplifier November 1996 Features Description Fast Acquisition Time 0.0 1 % . 700ns Fast Hold Mode Settling Time (0.01%). 200n

sonar 200khz

Abstract: HA9P5340-5 HA3-5340-5 HA-5320 HA-5340
Contextual Info: HA-5340 Data Sheet September 1998 File Number 2859.3 700ns, Low Distortion, Precision Sample and Hold Amplifier Features The HA-5340 combines the advantages of two sample/ hold architectures to create a new generation of monolithic sample/hold. High amplitude, high frequency signals can be

Contextual Info: GaAs MMICs GN01068B GaAs IC with built-in ferroelectric For preamplifier of the PDC transmitting section unit: mm • Features +0.2 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.5 –0.05 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 M Di ain sc te on na tin nc

Contextual Info: HA-5340 Data Sheet May 2003 700ns, Low Distortion, Precision Sample and Hold Amplifier The HA-5340 combines the advantages of two sample/ hold architectures to create a new generation of monolithic sample/hold. High amplitude, high frequency signals can be

GN01068B

Contextual Info: GaAs MMICs GN01068B GaAs IC with built-in ferroelectric For preamplifier of the PDC transmitting section unit: mm • Features +0.2 +0.25 1.5 –0.05 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

Contextual Info: HA-5340 Semiconductor September 1998 700ns, Low Distortion, Precision Sample and Hold Amplifier T he H A -5340 com b in es the ad van ta ge s o f tw o sa m p le / hold a rch itecture s to crea te a new ge ne ration o f m on olithic sam p le /h old . High am plitude, high fre q u e n cy sig na ls can be