21L1A Search Results

Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Unit: mm z Complementary to the RN1101MFV to RN1106MFV R1 (kΩ) R2 (kΩ)

sat 1205

Abstract: 2SA1955FV
Contextual Info: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

RN1107MFV

Abstract: RN1109MFV RN2107MFV RN2108MFV RN2109MFV
Contextual Info: RN2107MFV～RN2109MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107MFV, RN2108MFV, RN2109MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1114MFV

Abstract: RN1118MFV RN2114 RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV
Contextual Info: RN2114MFV～RN2118MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV 単位 : mm R1 (kΩ) R2 (kΩ) RN2114MFV 1 10 RN2115MFV 2.2 10 RN2116MFV 4.7 10 RN2117MFV

RN1104FV

Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV
Contextual Info: RN1101FV~RN1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting

Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV

Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.

RN1110MFV

Abstract: RN1111MFV RN2110MFV RN2111MFV
Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.

RN1131MFV

Abstract: RN2131MFV RN2132MFV
Contextual Info: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process

sat 1205

Contextual Info: RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 z Reduce a quantity of parts and manufacturing process 0.4 1 0.4 0.8±0.05 2

Contextual Info: RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.32±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 With built-in bias resistors

Contextual Info: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.8±0.05 0.4 Complementary to the RN1107MFV~RN1109MFV

RN2110FV

Abstract: RN1110FV
Contextual Info: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV

RN1112MFV

Abstract: RN1113MFV RN2112MFV RN2113MFV
Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2107MFV, RN2108MFV, RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 A wide range of resistor values is available for use in various circuits.

2SC5376FV

Abstract: sat 1205
Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •

RN2103FV

Abstract: RN2104FV RN2105FV RN2106FV RN1101FV RN1106FV RN2101FV RN2102FV
Contextual Info: RN2101FV~RN2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, RN2106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 Built-in bias resistors

2SA1955FV

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage

sat 1205

Abstract: RN1131MFV RN2131MFV RN2132MFV
Contextual Info: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process

RN2132MFV

Abstract: RN1131MFV RN2131MFV
Contextual Info: RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131MFV,RN2132MFV Unit : mm z Reduce a quantity of parts and manufacturing process 0.32±0.05 0.8±0.05 0.4 z Simplify circuit design 1.2±0.05 1 0.4 1.2±0.05 z With built-in bias resistors

RN1104MFV

Abstract: RN1101MFV RN1102MFV RN1103MFV RN1105MFV RN1106MFV RN2101MFV RN2106MFV
Contextual Info: RN1101MFV～RN1106MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用