22 NF, 63 Search Results

LCR polypropylene Capacitors

Abstract: LCR Capacitors 2000v mkc 55 PRECISION cAPACITORS polystyrene capacitors LCR polypropylene Capacitors dc 55-085-56 630V FSC 160V
Contextual Info: Precision Capacitors LCR TYPE FPC FSC FSC/EX FPC/EX MKC/R MKC/PC RATED DC VOLTAGE AC 160 - 630 VDC 30 - 630 VDC 63 - 630 VDC 63 - 630 VDC 63 - 400 VDC 63 - 400 VDC CAPACITANCE RANGE 1 - 150 nF 25 pF - 200 nF 47 pF - 100 nF 47 pF - 100 nF 0.01 - 22 µF 0.01 - 22 µF

DMNF2-63FIB-C

Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Part Number System for Pan-Term Metric Disconnects DM NF Type N DM = Disconnect Metric 1 Wire Range Insulation = Nylon NF = Nylon Funnel V — = Vinyl = Non-Insulated leave blank 285 FIB 1 = 0.5 – 1.0mm2 (22 – 18 AWG)

microswitch

Abstract: E1422 W097125 MC 1.5 c640-10 60944 63130 FG79 22X58 FG78
Contextual Info: Gears & Fuse Gears Gears & Fuse Gears IEC General Purpose Fuses Ferrule Fuses SI Bases for 14x51, 22x58 SI 22 SI 14 SI with microswitch For Ferrules-type fuses Ø 14 - 22 • • • • SHOCK-PROOF MODULAR ASSEMBLY COMPLIANT WITH IEC 60269-1 AND NF C 63130

HSG1001

Abstract: IC str 1229
Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

Contextual Info: Mini-Circuits - Specification for Amplifier - VNA-22 Amplifier print this page VNA-22 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz NF dB Typ. IP3 dBm Typ. 500-2500 11.80 +17.00 +10.00 6.70 Lw=low range fL to fU/2 U=upper range(fU/2 to fU)

940-025

Contextual Info: Sav-Con connector savers Series 22 Geo-Marine connectors 940-025 Scoop-Proof High-Pressure Connector How To Order Sample Part Number 940 Series No. 940 Basic No. -025 Finish Symbol B, J, M, N, NF, T, Z1 See Table I Shell Size 10, 12, 14, 16, 18, 20, 22, 24

Contextual Info: N. BNC. TNC SERIES 2 WATTS 22 If 8 _L N MALE BNC MALE N FEMALE TNC MALE < A . - . CFT-2 NF MECHANICAL SPECIFICATIONS Connector Contact Housing Insulator aa ELECTRICAL SPECIFICATIONS Brass, Nickel Plated. Brass, Gold Plated. Brass, Nickel Plated.

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:

60Ghz

Abstract: FMM5716X ED-4701
Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

CECC 22111

Contextual Info: Standards Approvals SUHNER SMA connectors conform to International: IEC 169-15 Europe: CECC22110 USA: MIL-C-39012, SMA Interface MIL-STD-348a/310 GB: BS 9210 N 0006 F: NF-C-93563 KMR SUHNER SMA connectors are approved in accor dance with CECC 22 11 0 and are mentioned ir

Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

ua 722 fc

Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:

transistor MJE 2955

Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842
Contextual Info: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:

Contextual Info: Coaxial Microwave Terminations 22 N. BNC. TNC SERIES 2 WATTS N MALE BNC MALE CFT-2 NM CFT-2 BM N FEMALE TNC MALE IN 0.60 0.65 0.75 0.80 1.35 1.50 1.60 MM 15.24 16.51 19.05 20.32 34.29 38.10 40.64 T B CFT-2 NF CFT-2 TM MECHANICAL SPECIFICATIONS Connector Contact

vg 96912 16-8

Abstract: 941L vg 96912
Contextual Info: Sav-Con Connector Savers Sav-Con® Connector Savers LN 29729 SJT 94 1 L 001 NF 28 G 22 P X Series No. Class 1 = Environmental 2 = Hi Rel L = Lock Ring (Optional) - = Standard Basic Part No. Finish Symbol (See Page 6) Alternate Position W, X, Y, Z (Omit for Normal)

2200 microfarad electrolytic capacitor

Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
Contextual Info: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33

Contextual Info: N. BNC. TNC SERIES 2 WATTS Microwave Terminations 22 N MALE BNC MALE T B CFT-2 NM CFT-2 BM N FEMALE TNC MALE IN MM 0.60 15.24 0.65 16.51 0.75 19.05 0.80 20.32 1.35 34.29 1.50 38.10 1.60 40.64 rn CFT-2 NF CFT-2 TM MECHANICAL SPECIFICATIONS Connector Contact

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

SAV-CON

Abstract: vg 96912 A 2039 g vg 96912 16-8
Contextual Info: Sav-Con Connector Savers LN 29729 SJT Sav-Con® Connector Savers 94 1 L 008 NF 28 G 22 P X Series No. Class 1 = Environmental 2 = Hi Rel L = Lock Ring (Optional) - = Standard Basic Part No. Finish Symbol (See Page G-6) Alternate Position W, X, Y, Z (Omit for Normal)

TSE 151

Abstract: BB502C SC-82AB Hitachi DSA00310
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B Z 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz