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    22 PF TEKELEC Search Results

    22 PF TEKELEC Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    PCM4222PFBR Texas Instruments 124dB SNR Stereo Audio ADC with PCM/DSD and modulator outputs 48-TQFP -40 to 85 Visit Texas Instruments Buy
    PCM4222PFB Texas Instruments 124dB SNR Stereo Audio ADC with PCM/DSD and modulator outputs 48-TQFP -40 to 85 Visit Texas Instruments Buy

    22 PF TEKELEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBL105

    Abstract: mbl10 top 8901
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS


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    PDF M3D379 M3D461 BLF900-110; BLF900S-110 SCA75 613524/03/pp14 MBL105 mbl10 top 8901

    2sK2750 equivalent

    Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
    Text: SELECTION GUIDE Power MOSFET www.toshiba-components.com X3 POWERMOSFET07 PowerMosfet-Brosch.indd 1 03.05.2007 13:53:26 Uhr 2 V S-6 Part Number (TSOP6) Maximum Ratings Circuit VDSS(V) ID(A) Configuration 10V RDS (ON) max (m ⍀) 4.5V 2.5V 2.0V 1.8V Qg typ. Ciss typ.


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    PDF POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625

    transistor MAR 826

    Abstract: BLF1047 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Mar 22 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D390 BLF1047 OT541A 603516/04/pp11 transistor MAR 826 BLF1047 BP317

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


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    PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    BLF871

    Abstract: DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140
    Text: BLF871 UHF power LDMOS transistor Rev. 03 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


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    PDF BLF871 BLF871 DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140

    J0266

    Abstract: J-0834 J1930 001aaj288
    Text: BLF871 UHF power LDMOS transistor Rev. 01 — 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


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    PDF BLF871 BLF871 J0266 J-0834 J1930 001aaj288

    BLF871

    Abstract: J1930
    Text: BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


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    PDF BLF871 BLF871 J1930

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification 1999 Jan 07 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature


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    PDF M3D171 BLV2045N OT390A BLV2045N SCA60 budgetnum/printrun/ed/pp10

    Capacitor Tantal SMD

    Abstract: capacitor 0,1 k 250 mkt philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD capacitor 0,1 k 250 mkt philips

    BLF861

    Abstract: UT70 rogers 5880 821 ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D392 BLF861 OT540A budgetnum/printrun/ed/pp12 BLF861 UT70 rogers 5880 821 ceramic capacitor

    NFM61RH20T332

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2045N UHF power transistor Preliminary specification 1998 Oct 01 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PINNING - SOT390A FEATURES • Emitter ballasting resistors for optimum temperature


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    PDF BLV2045N OT390A BLV2045N SCA60 budgetnum/printrun/ed/pp10 NFM61RH20T332

    Untitled

    Abstract: No abstract text available
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


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    PDF BLF871; BLF871S BLF871 BLF871S

    Untitled

    Abstract: No abstract text available
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


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    PDF BLF871; BLF871S BLF871 BLF871S

    AcP 9805

    Abstract: 8GP50 blv2047 M3D372
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1998 Mar 10 1999 Jan 28 Philips Semiconductors Product specification UHF power transistor BLV2047 PINNING - SOT468A FEATURES • Emitter ballasting resistors for optimum


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    PDF M3D372 BLV2047 BLV2047 OT468A SCA61 125002/00/05/pp12 AcP 9805 8GP50 M3D372

    BLF871

    Abstract: 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


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    PDF BLF871; BLF871S BLF871 BLF871S 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Jan 25 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D390 BLF1047 BLF1047 OT541A OT541A) 603516/04/pp11

    Capacitor Tantal SMD

    Abstract: Tantal SMD transistor SMD 2201
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp12 Capacitor Tantal SMD Tantal SMD transistor SMD 2201

    BLF1047

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2000 Oct 23 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D390 BLF1047 OT541A 603516/04/pp11 BLF1047 BP317

    BLV958

    Abstract: BLV958FL 101 Ceramic Disc Capacitors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1997 Oct 15 2000 Jan 12 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    PDF BLV958; BLV958FL OT391A OT391B 125002/04/pp12 BLV958 BLV958FL 101 Ceramic Disc Capacitors

    NFM61RH20T332

    Abstract: AT37281 TEKELEC AT37271 AT37271 ph98 BLV2045N MCD883
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT390A • Emitter ballasting resistors for optimum temperature


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    PDF M3D171 BLV2045N OT390A 603516/08/pp12 NFM61RH20T332 AT37281 TEKELEC AT37271 AT37271 ph98 BLV2045N MCD883

    PF5102

    Abstract: KC105 Tekelec TE 10 75 a2cb -20/Tekelec TE 10 75
    Text: Cb ~ 0.10 pF A 22 e 24.5min 4-2±a2 _ 10 1.9*°-2 a0.38*003 Cb ~ 0.10 pF B H 15 0.05/0.10 Cb ~ 0.20 pF B H 28 Cb~ 0,20 pF B H 32 0 3.1 ± 0.1 05.84 102 CNI -H hCO t 04.0 2.04 *0-07 5 ± 0 .1 74 0 4.06 101 C b ~ 0.14 pF C ~ 0.25 pF 0 1 .5710.05 01.8 j- .— w


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    PDF

    M208

    Abstract: No abstract text available
    Text: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide


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    PDF 10G37 000G232 M208

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


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    PDF BLV948

    NFM61 SP

    Abstract: tekelec TA 355 TEKELEC te 358
    Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature


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    PDF BLV2045N BLV2045N OT39QA SCA60 /printrun/ed/pp10 NFM61 SP tekelec TA 355 TEKELEC te 358