220 INVERTER Search Results

C157C

Abstract: c164n c157a C158PB TO93 package C154E c155d C354B C358PA C159
Contextual Info: INVERTER SCRs C154 C156 C155 C157 C158 C159 C164 C165 C l 84 C185 C354 C355 C358 100-600 100-800 500-1200 100-800 100-800 100-800 500-1200 _ _ _ _ _ _ _ @ 1 KHz 220 220 220 220 500 500 400 @ 5 KHz 120 120 180 220 340 120 200 @ 10 KHz 75 75 120 140 80

005I0

Abstract: 220-12N1 220-16N1
Contextual Info: MDD 220 IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 800-1800 V High Power Diode Modules VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 MDD 220-18N1 Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine

4069 CMOS hex inverter

Abstract: 4069 CMOS 74C04 transformer 220 volts CMOS 4069 gate not 4069 inverter 220 Ohms Resistors high voltage gate drive transformer cmos 4069 PNP TRANSISTor experiments
Contextual Info: High Voltage Generator for Low Current Applications. 12 VDC + 220 uf .01 uf .01 uf NPN 220 ohm 10 ohm 1 Meg. 220 uf + 1 Meg. 120 v 4, 1N4004 or similar 220 ohm 10 ohm 12 v + + PNP 74C04 or 4069 CMOS Hex Inverter A quad nand gate may be used by tying the inputs together.

C157C

Abstract: C155D C156A C358M C159 C154A c157a to-94 C185n C3540
Contextual Info: RICHARDSON/ INVERTER SCRs N A TI ON AL EL b2E D • 7 7 3 4 e]!? GOOQti'iS ñt.7 ■ NAT C154 C156 C155 C157 C158 C159 C164 C165 C l 84 C185 C354 C355 C358 100-600 100-800 500-1200 100-800 100-800 100-800 500-1200 _ _ _ _ _ _ _ @ 1 KHz 220 220 220 220 500

220-14N1

Abstract: 220-12n1 220-16n1
Contextual Info: MDD 220 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine

Contextual Info: MDD 220 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine

Contextual Info: DIXYS High Power Diode Modules MDD220 IFRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM

KA7500B equivalent

Abstract: POWER INVERTER ON KA7500B KA3525A equivalent ka3842b equivalent PWM converter DC-DC 24v 5v DIP-8 automatic off 12V battery charging by power scr ka3525a inverter circuit KA339 equivalent pulse generator cum timer application ka3525a
Contextual Info: PRODUCT GUIDE LINEAR ICs 1. FUNCTION GUIDE 1.1 A. Voltage Regulator 3-Terminal Positive Fixied Voltage Regulator Function Type Very High Output Current 3A KA78TXX Series TO-220 High Output Current KA7SXX/A/I series TO-220 KA340TXX series TO-220 KA78MXX/I

MJE13007

Contextual Info: SILICON PLASTIC POWER TRANSISTOR NPN MJE13007 .suited for 115 and 220 V switch-mode applications such as Switching Regulators,Inverters,Motor Controls, Solenoid/Relay 400VOLTS/80WATTS drivers and Deflection circuits. MAXIMUM RATINGS Rating TO-220 Symbol

equivalent mje13005

Abstract: MJE13005 MJE13007
Contextual Info: NPN MJE13005 SILICON PLASTIC POWER TRANSISTOR .suited for 115 and 220 V switch-mode applications such as Switching Regulators,Inverters,Motor Controls, Solenoid/Relay drivers and Deflection circuits. 400VOLTS/75WATTS MAXIMUM RATINGS Rating TO-220 Symbol

B945

Abstract: b946 B941 B-945 B942 1M220 N2M400 diode skn 71 SKN 1M 40 11l02
Contextual Info: 51E D • Ö13bb71 □ □ □ 3 ^ 3 C TbS « S E K G ^ E M I K R O N INC Ifa v V rsm V rrm V Fast Recovery Rectifier Diodes sin. 180; Tease ~ 85 °C) 350 A 400 A SKN 1M 220/02 SKN 1M 220/04 SKN 1M 220/06 SKN 1M 220/10. 200 400 600 800 1000 1200 1400 1500

CHN 747

Abstract: oms 450 DIODE RK 306 CHN 450 E72873 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 rectifier bridge VU
Contextual Info: H71 B IIX Y 4t>flb22b 000171A n iX Y S Diode Modules MDD220 iTAV= 2 x 270 A VRRM = 600-1600 V Vmm V rm , Type V V Version 1 700 900 1300 1500 1700 600 600 1200 1400 1600 M D D 220-08N1 M D D 220-08N 1 M D D 220-12N 1 / z k S - M D D 220-16N1 Sym bol T e s t conditions

SCHOTTKY BARRIER BRIDGE RECTIFIERS

Contextual Info: SB 220.SB 2100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode Schottky barrier rectifiers diodes SB 220.SB 2100 8  9  4

10ETF

Abstract: 10ETF02 10ETF04 10ETF06
Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-93 10ETF02 diodTO-220 70-218-19 10ETF04 diodTO-220 70-218-35 10ETF06 diodTO-220 I2137 rev. A 11/99 QUIETIR Series

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR30100CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR20200CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10150CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR4045CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

1N5822 SMD

Abstract: 1N5822 SMD data sheet download smd package 1N5819 1N5820 SMA MELF GLASS Schottky Blue DO-213AB GLASS Schottky Blue 1N5822 smd diode 1n5819 smd 1N5822 SMc 1N5817 SPICE
Contextual Info: N E Isolated TO-220 Schottky Rectifiers W P R Part Number Definition Recommended Mounting Techniques ITO-220 Introduction Applications Product Features Schottky Rectifiers Selector Chart Product Specifications Summary Cross Reference Isolation Voltage Case Outlines

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10125CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR20125CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10200CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10150CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR30200CT SCHOTTKY BARRIER RECTIFIER TO-220 FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency