222 DIODE Search Results

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

12TQ

Abstract: 12TQ035 12TQ040 12TQ045 40HFL40S02 IRFP460
Contextual Info: 2002-02-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-222-47 12TQ035 sch diodTO-220AC 70-222-62 12TQ040 sch diodTO-220AC 70-222-88 12TQ045 sch diodTO-220AC PD-2.239 rev. A 12/97

Contextual Info: RPI-222 External dimensions Unit : mm RPI-222 Photointerrupter, Small type Through hole Absolute maximum ratings (Ta=25°C) PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation

FR 220

Abstract: fr220
Contextual Info: IRFR220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

TMPZ84C015

Abstract: 8 pin mini-din diagram 9 pin female d-sub MSH 14 Connectors 6103AC01 MSH Connectors PC ladder diagram pc worx
Contextual Info: CP 222 IB INTERBUS Control Panel With Programming Capabilities According to IEC 61131-3 Data Sheet 6103AC01 07/2001 This data sheet is intended to be used in association with the user manual "Description and Installation of the CP 222 IB Control Panel". Product Description

AN-248

Contextual Info: ANALOG ► DEVICES AN-248 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 ADG201A/202A and ADG221/222 Performance with Reduced Power Supplies by John Reidy The ADG201A/202A and ADG221/222 are m on o lith ic

resistor

Abstract: 1n5819 smd 1mh inductor tl431 smd ln4001 .1k 400V capacitor 4.7uF 400V capacitor 1N5819 smd diode smd 472 resistor smd 102
Contextual Info: D esignator P art Type F oot P rint D e scrip tio n A ccu ra te L1 1mH Inductor C1 4.7UF/400V Electric Capacitor 85eC C2 4.7UF/400V Electric Capacitor 85eC C3 222/1KV Ceramic Capacitor C4 100U/16V Electric Capacitor C5 682/60V 0805A SMD Capacitor C6 222/60V

IRFU220

Abstract: IRFR220 U222 irfu220 samsung J50V IRFR222 G31* Diode B51A 222 diode
Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7 *lh4m S IKFH220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 0 Q 1 2 3 MG ITS « S H G K D-PACK Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated

SR 6863

Abstract: sr 6863 D logic pulser intel 8085 instruction set FOR PRACTICAL of 7490 Interfacing and Matrix Keyboard 8085 86c7
Contextual Info: Application Note 222 A DESIGNER'S G UID E TO SIGNATURE ANALYSIS TABLE OF CONTENTS Introduction to Signature Analysis . Scope . The Need for SA .

Diode press-fit

Contextual Info: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with

Contextual Info: AIGaAs INFRARED EMITTING DIODE 'TWl ~ •• S fe * ] PTDELECTRONICS QED221/222 DESCRIPTION PACKAGE DIMENSIONS The Q E D 22X is an 880nm AIGaAs LED en capsulated in a clear, purple tinted, plastic T-13/* package. FEATURES ■ Tight production E„ distribution.

sot234 jt

Abstract: PCA84C MCD251
Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 PHILIPS Philips Semiconductors Product specification

49 mhz remote control transmitter circuit

Abstract: Data Handbook IC14 PCA84C122 822 ic MAKING IR REMOTE CONTROL IC RC-5 ic remote control REMOTE CONTROL IC TI 783 DIP20 PCA84C222
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors

Data Handbook IC14

Abstract: 822 ic MAKING RC-5 ir remote control DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 MCD251
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors

QED221

Abstract: QED222 880nm
Contextual Info: LËU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED221/222 PACKAGE DIMENSIONS DESCRIPTION The QED22X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-13/4 package. FEATURES • Tight production Ee distribution. ■ Steel lead frames for improved reliability in solder

sot234 jt

Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01

specification diode BY 127

Abstract: diode BY 127 SPECIFICATION BB112 capacitance diode
Contextual Info: Philips Semiconductors Product specification AM variable capacitance diode BB112 FEATURES • Matched to 3% k « Leaded plastic package S T - - • C8.5: 23 pF; ratio: 21. . M — Hh 3 M A M 222 APPLICATIONS Fig. 1 Simplified outline SOD69; TO-92 variant and symbol.

3 phase inverter simulation diagram

Abstract: difference between IGBT and MOSFET IN inverter Measurement of stray inductance for IGBT schematic diagram PWM inverter voltage source Three phase inverter mosfet Diagram 3 phase inverter schematic diagram Power MosFet inverter schematic diagram Simulation of three-phase inverter IRFP2907 Application Notes mosfet INVERTER applications
Contextual Info: Combined Device and System Simulation for Automotive Application Using SABER Jingdong Chen, Scott Downer, Anthony Murray, Alberto Guerra and Tim McDonald International Rectifier Co. 222 Kansas Street, El Segundo, CA 90245 As presented at WPET 2002 Abstract:

BAV70A

Abstract: RT2B1 su13 SIEMENS RT1A1 10w r33 diode zener c72 R47 DALE DIP8 socket Philips zener diode ct2 pal22v10h
Contextual Info: Router/ISDN Development Module - Miscellaneous Revised: Thursday, February 11, 1999 Revision: 2.1 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials February 11,1999

Contextual Info: External dimensions Unit : mm RPI-222 Photointerrupter, Small type Through hole Absolute maximum ratings (Ta=25°C) PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation PC

PCA84C122

Abstract: DIP20 PCA84C222 S020 S028 SDIP24 PCA84C
Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 Philips Semiconductor« PHILIPS ht f l Q # 3 s

Contextual Info: External dimensions Unit : mm RPI-222 Photointerrupter, Small type Through hole Absolute maximum ratings (Ta=25°C) PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation PC