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    2226 TRANSISTOR Search Results

    2226 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2226 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2226 transistor

    Abstract: ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227
    Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 2.90+0.20 –0.05 (R2)   6.8 kΩ


    Original     		PDF UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 2226 transistor ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227

    TRANSISTOR 2226

    Abstract: 2226 transistor UNR2227
    Text: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2)   6.8 kΩ 1.1+0.2


    Original     		PDF UNR2225/2226/2227 UN2225/2226/2227) UNR2225 UNR2226 UNR2227 SJH00040AED TRANSISTOR 2226 2226 transistor

    Untitled

    Abstract: No abstract text available
    Text: 19-2226; Rev 1; 7/04 KIT ATION EVALU E L B AVAILA Temperature Sensor and System Monitor in a 10-Pin µMAX The MAX6683 system supervisor monitors multiple power-supply voltages, including its own, and also features an on-board temperature sensor. The MAX6683


    Original     		PDF 10-Pin MAX6683 MAX6683 11-bit 10-bit-plus-sign) vo500

    MAX6683

    Abstract: MAX6683AUB MAX6683EVKIT
    Text: 19-2226; Rev 1; 7/04 KIT ATION EVALU E L B AVAILA Temperature Sensor and System Monitor in a 10-Pin µMAX The MAX6683 system supervisor monitors multiple power-supply voltages, including its own, and also features an on-board temperature sensor. The MAX6683


    Original     		PDF 10-Pin MAX6683 MAX6683 11-bit 10-bit-plus-sign) MAX6683AUB MAX6683EVKIT

    Untitled

    Abstract: No abstract text available
    Text: 19-2226; Rev 0; 10/01 Temperature Sensor and System Monitor in a 10-Pin µMAX Applications Features ♦ Monitors Local Temperature ♦ Monitors Three External Voltages 1.8V, 2.5V, 5V Nominal ♦ Monitors VCC (3.3V Nominal) ♦ User-Programmable Voltage and Temperature


    Original     		PDF 10-Pin MAX6683 11-bit 10-bit-plus-sign) MAX6683 10LUMAX

    MAX6683

    Abstract: MAX6683AUB MAX6683EVKIT
    Text: 19-2226; Rev 0; 10/01 Temperature Sensor and System Monitor in a 10-Pin µMAX Applications Features ♦ Monitors Local Temperature ♦ Monitors Three External Voltages 1.8V, 2.5V, 5V Nominal ♦ Monitors VCC (3.3V Nominal) ♦ User-Programmable Voltage and Temperature


    Original     		PDF 10-Pin MAX6683EVKIT MAX6683AUB MAX6683 10LUMAX MAX6683 MAX6683AUB

    ic MARKING FZ

    Abstract: UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227
    Text: Transistors with built-in Resistor UNR2225 UN2225 , UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR2225 UN2225) UNR2226 UN2226) UNR2227 UN2227) ic MARKING FZ UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR2225 UN2225) UNR2226 UN2226) UNR2227 UN2227)

    ic MARKING FZ

    Abstract: UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR2225 UN2225) UNR2226 UN2226) UNR2227 UN2227) ic MARKING FZ UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR2225 UN2225) UNR2226 UN2226) UNR2227 UN2227)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR2225 UN2225) UNR2226 UN2226) UNR2227 UN2227)

    UN2225

    Abstract: UN2226 UN2227 UNR2225 UNR2226 UNR2227
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 (0.65)


    Original     		PDF 2002/95/EC) UNR2225 UN2225) UNR2226 UN2226) UNR2227 UN2227) UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227

    RN2227

    Abstract: 2226 transistor transistor 2227 RN2222 RN2224 2227 RN1221 RN1227 RN2221 RN2223
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN2227 2226 transistor transistor 2227 2227 RN1221 RN1227 RN2223

    RN1221

    Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 2226 transistor
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227 2226 transistor

    800ma

    Abstract: RN2221 RN2222
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) 800ma

    Untitled

    Abstract: No abstract text available
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA)

    Lu32

    Abstract: No abstract text available
    Text: LTC2226H 12-Bit, 25Msps 125°C ADC in TQFP FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Sample Rate: 25Msps –40°C to 125°C Operation Single 3V Supply 2.8V to 3.5V Low Power: 75mW 71.4dB SNR 90dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range


    Original     		PDF LTC2226H 12-Bit, 25Msps 2226H 12-bit 25Msps, 25LSBRMS. 32-Pin 320mW, Lu32

    2228

    Abstract: LTC2227 LTC2228 LTC2229 LTC2247 LTC2248 LTC2249 LTC2252 LTC2253 LTC2254
    Text: LTC2228/LTC2227/LTC2226 12-Bit, 65/40/25Msps Low Power 3V ADCs U FEATURES DESCRIPTIO • The LTC 2228/LTC2227/LTC2226 are 12-bit 65Msps/ 40Msps/25Msps, low power 3V A/D converters designed for digitizing high frequency, wide dynamic range signals. The LTC2228/LTC2227/LTC2226 are perfect for demanding imaging and communications applications with AC


    Original     		PDF LTC2228/LTC2227/LTC2226 12-Bit, 65/40/25Msps 2228/LTC2227/LTC2226 12-bit 65Msps/ 40Msps/25Msps, LTC2228/LTC2227/LTC2226 65Msps/40Msps/25Msps 205mW/120mW/75mW 2228 LTC2227 LTC2228 LTC2229 LTC2247 LTC2248 LTC2249 LTC2252 LTC2253 LTC2254

    RN1221

    Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227
    Text: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors


    Original     		PDF RN2221 RN2227 RN2222 RN2223 RN2224 RN2225 RN2226 -800mA) RN1221 RN1227 RN2223 RN2227

    EMA302B

    Abstract: EPA080A EPA160A
    Text: Excelics EMA302B PRELIMINARY DATA SHEET 22-26 GHz Medium Power MMIC 85 165 50 165 Operating Frequency Range 1020 F PARAMETERS/TEST CONDITIONS 325 425 50 95 900 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS1 Ta = 25 OC


    Original     		PDF EMA302B EMA302B EPA080A EPA160A

    Untitled

    Abstract: No abstract text available
    Text: LTC2228/LTC2227/LTC2226 12-Bit, 65/40/25Msps Low Power 3V ADCs FEATURES n n n n n n n n n n n n DESCRIPTION The LTC 2228/LTC2227/LTC2226 are 12-bit 65Msps/ 40Msps/25Msps, low power 3V A/D converters designed for digitizing high frequency, wide dynamic range signals.


    Original     		PDF LTC2228/LTC2227/LTC2226 12-Bit, 65/40/25Msps 2228/LTC2227/LTC2226 12-bit 65Msps/ 40Msps/25Msps, LTC2228/LTC2227/LTC2226 65Msps/40Msps/25Msps 205mW/120mW/75mW

    F923

    Abstract: IRF9230 IRF9232 IRF9231 IRF9233 transistors bipolar
    Text: _ Rugged Power MOSFETs File Number IRF9230, IRF9231, IRF9232, IRF9233 2226 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -5.5 A and -6.5 A, -150 V and -200 V rDs on = 0.8 i l and 1.2 Cl D Features: • ■ ■ ■ • S ingle pulse avalanche e n ergy ra ted


    OCR Scan     		PDF IRF9230, IRF9231, IRF9232, IRF9233 IRF9232 IRF9233 92CS-4331I 92CS-43305 F923 IRF9230 IRF9231 transistors bipolar

    RN2223

    Abstract: ko iq
    Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)


    OCR Scan     		PDF RN2221-RN2227 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 --800mA) RN1221 RN2223 ko iq

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN2221 ~ R N 2 2 2 7 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High C urrent Type (10 (MAX)= —800mA)


    OCR Scan     		PDF RN2221 RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 800mA) RN1221