222BH Search Results

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

2228H

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

MB84VD2118XA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2118XA-85/MB84VD2119XA-85 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

DIODE marking A19

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

BGA-48P-M13

Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

sa728

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

DS05

Abstract: mbm29dl16xtd
Contextual Info: MBM29DL16XTD/16XBD-70/90 データシート 生産終息品 MBM29DL16XTD/16XBD- 70/90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

DS05

Abstract: SA201
Contextual Info: MBM29DL16XTE/16XBE70/90 データシート 生産終息品 70/90 MBM29DL16XTE/16XBE Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

MB84VD2108X

Abstract: MB84VD2109X 84VD2109
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50201-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108X-85/MB84VD2109X-85 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

PL 2305H

Abstract: MC1110
Contextual Info: TO SH IB A TMP95CU54A CMOS 16-Bit Microcontrollers TMP95CU54AF 1. Outline and Features TMP95CU54A is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CU54A comes in a 100-pin flat package. Listed below are the features.

BGA-56P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50218-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XDA-85/MB84VD2119XDA-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: MB84VD2108XEM-70 MB84VD2109XEM-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

D2119

Abstract: MB84VD2118XA 0A0000H
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM M B 8 4 V D 2 1 18XA -35/M B84VD 2119XA-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

2SA29

Abstract: 50202-2 MB84VD2118XA
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50202-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M ( x 8/ × 16) FLASH MEMORY & 4M ( × 8/ × 16) STATIC RAM MB84VD2118XA-85/MB84VD2119XA-85 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

DS05-20874-4E

Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,