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    API Delevan 4922-51H

    FIXED IND 15MH 61MA 105 OHM SMD
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    DigiKey 4922-51H Reel 800
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    Brady Worldwide Inc 7225-1HV-PK

    B946 7225-1HV BK/YW 5PK
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    RS 7225-1HV-PK Package 4 Weeks 1
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    Vishay Sprague M39003-01-2251H

    CAP TANT 330UF 10% 6V AXIAL
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    Siemens 3RA22251HD240AP6

    STARTER REV FB S0 5.5-8A 240VAC
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    DigiKey 3RA22251HD240AP6 Box 1
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    Mouser Electronics 3RA22251HD240AP6
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    RS 3RA22251HD240AP6 Bulk 1
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    Siemens 3RA22251HD240AK6

    STARTER REV FB S0 5.5-8A 120VAC
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    Mouser Electronics 3RA22251HD240AK6
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    RS 3RA22251HD240AK6 Bulk 1
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    2251H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/20/1999 PM0549

    29F200T

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 29F200T

    FPT-48P-M20

    Abstract: DS05 FPT-48P-M19 MBM29F200BA
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–20813–2E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 MBM29F200TA/MBM29F200BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		PDF 8/128K MBM29F200TA/MBM29F200BA 48-pin 44-pin P9603 FPT-48P-M20 DS05 FPT-48P-M19 MBM29F200BA

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-4E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 • GENERAL DESCRIPTION The MBM29F200TC/BC is a 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K


    Original     		PDF DS05-20867-4E 8/128K 9F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 MBM29F200TC/BC 48-pin 44-pin F0306

    MX29F200C

    Abstract: PM1250 MX29F200CT Q0-Q15
    Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture


    Original     		PDF MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA PM1250 MX29F200CT Q0-Q15

    Macronix

    Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h
    Text: APPLICATION NOTE Migrating to the Macronix MX29F200C & MX29F400C Flash Families from Spansion Am29F200B & Am29F400B Memory Devices. Contents Introduction. 2


    Original     		PDF MX29F200C MX29F400C Am29F200B Am29F400B Macronix architecture in 4289 Macronix International 2257h

    MX29F200CT

    Abstract: Q0-Q15 MX29F200CTTI-70G
    Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture


    Original     		PDF MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA MX29F200CT Q0-Q15 MX29F200CTTI-70G

    HY29F200

    Abstract: HY29F200B HY29F200T
    Text: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and


    Original     		PDF HY29F200T/B 48-Pin HY29F200 16-Bit) G-70I, T-70I R-70I G-70E, T-70E, R-70E HY29F200B HY29F200T

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549

    Untitled

    Abstract: No abstract text available
    Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture


    Original     		PDF MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549 JUN/15/2001 555H MX29F200B MX29F200T

    MBM29F200BC-70PFTN

    Abstract: DS05 FPT-48P-M19 MBM29F200BC
    Text: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され


    Original     		PDF 8/128K MBM29F200TC/200BC-55/70/90 MBM29F200TC/BC MBM29F200TC/BC-55 MBM29F200TC/BC-90 MBM29F200TC/BC-70 F48030S-c-6-7 MBM29F200BC-70PFTN DS05 FPT-48P-M19 MBM29F200BC

    Untitled

    Abstract: No abstract text available
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001

    diode MARKING CODE A9

    Abstract: No abstract text available
    Text: MBM29F200TC-55/-70/-90 MBM29F200BC-55/-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.


    Original     		PDF MBM29F200TC-55/-70/-90 MBM29F200BC-55/-70/-90 F0306 diode MARKING CODE A9

    Untitled

    Abstract: No abstract text available
    Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F200T/Am29F200B 8-BII/131 16-Blt) 44-pin 48-pin Am29F200

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F200AT/Am29F200AB 44-pin 48-pin

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan     		PDF TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan     		PDF AS29F200 256KX8/128Kx 256Kx8 AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-70SC AS29F200B-70SI AS29F200T-70SC

    Untitled

    Abstract: No abstract text available
    Text: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture


    OCR Scan     		PDF 256KX8 128KX16 e-120TC -120TI S29F200B -55SC S29F200B-70SC -90SC

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I

    29F200

    Abstract: 29F200 amd 29F200T
    Text: a P R E L IM IN A R Y Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements


    OCR Scan     		PDF Am29F200T/Am29F200B 8-Bit/131 16-Bit) 29F200 29F200 amd 29F200T

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-3E FLASH MEMORY B lB 2M 256K X 8/128K x 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70A90


    OCR Scan     		PDF DS05-20867-3E 8/128K 29F200TC-55/-70/-90/MBM29F200BC-55/-70A90 48-pin 44-pin F4S029S-2C-2 MBM29 -90/M BM29F200 C-55/-70/-90/M

    PL 2305H

    Abstract: MC1110
    Text: TO SH IB A TMP95CU54A CMOS 16-Bit Microcontrollers TMP95CU54AF 1. Outline and Features TMP95CU54A is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CU54A comes in a 100-pin flat package. Listed below are the features.


    OCR Scan     		PDF 16-Bit TMP95CU54A TMP95CU54AF TMP95CU54A 100-pin 900/H TLCS-90/900 PL 2305H MC1110