225CH Search Results

Contextual Info: TMS320DM365 SPRS457E – MARCH 2009 – REVISED JUNE 2011 www.ti.com TMS320DM365 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM365 1 TMS320DM365 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

mjcp

Abstract: CCIR 656 GIO40
Contextual Info: TMS320DM368 SPRS668C – APRIL 2010 – REVISED JUNE 2011 www.ti.com TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

Contextual Info: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

MARKING SA70

Abstract: MBM29DL324
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

CA 324G

Abstract: DL322 DL323 DL324
Contextual Info: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES

M1531

Abstract: MC-222244AF9-B85X-BT3 MC-222244A-X
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-222244A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222244A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words

M29DW324D

Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

DS05

Abstract: 1E0000H 324BE
Contextual Info: MBM29DL32XTE/32XBE80/90 データシート 生産終息品 80/90 MBM29DL32XTE/32XBE Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

DL322

Abstract: DL323 DL324 M41000002R
Contextual Info: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL322

Abstract: DL323 DL324
Contextual Info: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Be 555

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

SA70

Abstract: SA4664
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50303-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD22386EF/VD22387EF/VD22388EF-85 MB84VD22396EF/VD22397EF/VD22398EF-85 • FEATURES • Power Supply Voltage of 2.7 to 3.0 V for FCRAM

1N1170

Abstract: BT565 Image Sensor Interface ISIF Registers DM368 hdvicp DM368 DM365 layout guidelines DDR dm368 isif application note 1080p cvbs
Contextual Info: TMS320DM368 www.ti.com SPRS668A – APRIL 2010 TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media System-on-Chip (DMSoC)

dm368

Abstract: TMS320DM368 hdvicp DM368 DM365 layout guidelines DDR
Contextual Info: TMS320DM368 www.ti.com SPRS668B – APRIL 2010 – REVISED NOVEMBER 2010 TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

mbm29DL324BD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M 4M x 8/2M × 16 BIT MBM29DL32XTD/BD Dual Operation -80/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

FSA37

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F032204AL-X 32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The µPD29F032204AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory