TF541M
Abstract: TRIACS EQUIVALENT LIST TM861S tm361s TF341M-A TF561M TF821S TF861S TOSHIBA DIODE CATALOG FM20
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TFD312S equivalent
Abstract: TFD312S-G
Text: Absolute Maximum Ratings/Electrical Characteristics Table Thyristors with Built-in Avalanche Diode TFD312S Series (Tj=25°C) Absolute maximum ratings Parameter 100 TFD312S-L 120 TFD312S-M 145 TFD312S-N 170 TFD312S-O 190 PG(AV) (W) Tj (°C) Tstg (°C) VISO
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TFD312S
TFD312S-C
TFD312S-F
TFD312S-G
TFD312S-J
TFD312S-K
TFD312S-L
TFD312S-M
TFD312S-N
TFD312S-O
TFD312S equivalent
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information applikation
Abstract: Halbleiterbauelemente DDR U555C information applikation mikroelektronik VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR mikroelektronik Heft mikroelektronik applikation Transistoren DDR
Text: in n ilk a n í o J B lB t a L J I , L J n Í lH KáD Information Applikation Halbleiter Speicher Teil 1 SRAM [ n n ilk r a ^ e lE s k t s n a r iik Information Applikation HEFT 79- , HALBLEITERSPEiCHER TEIL li > < .1* • • r* - . SRAM * VEB Halbleiterwerk Frankfurt Oder
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2n2907 pnp
Abstract: 2n2222 transistor pin b c e 2n2907 TRANSISTOR PNP MPQ6502 2n2222 npn 2N2906 NPN Transistor 2N2907 2N2221 2N2222 2N2906
Text: Central Sem iconductor Corp. Central Sem iconductor Corp. central sem iconductor Corp. 1 I 1 1 M P Q 6501 M P Q 6502 C OM PLEMENTARY QUAD T R A N SISTOR ♦I JEDEC T O - 116 CASE 145 Adam s Avenue Hauppauge, New York 11 788 D ESCRIPTION The CENTRAL S EM ICONDUCTOR M P Q 6 5 0 1 , MPQ6502, types are comprised of four independent
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MPQ6501
MPQ6502
O-116
MPQ6501,
MPQ6502,
2N2221
MPQ6502
2N2222
2N2906
2n2907 pnp
2n2222 transistor pin b c e
2n2907 TRANSISTOR PNP
2n2222 npn
2N2906 NPN Transistor
2N2907
2N2221
2N2222
2N2906
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