226 16K Search Results

bluetooth advantages and disadvantages

Abstract: japanese transistor manual substitution verilog code for speech recognition japanese transistor substitution 29LV160 29lv200 transister 117 29lv400 apex20k400 K52 Package
Contextual Info: PF1084-05 S1C33 Family Data Sheets • S1C33 Family • S1C33000 Core • S1C33209 • S1C33T01 • S1C33L01 • S1C33S01 • S1C33221/222 • S1C33240 • S1C33210 • S1C33205/225/226/245 • S1C33L03 • S1C33 Family Development Environment • S1C33 Family Middleware and Firmware

xc68hc705c9

Abstract: xc68hc705p9 XC68HC805C4 MC68HC705J2 1995 M68705EVM 68hc05b8 MC6809-MC6809E xc68hc705P mc68hc05c2 XC68HC705C
Contextual Info: M O T O R O L A F U Z Z Y L O G IC The advantages are clear •■■I M O T O R O L A Semiconductor Products Sector Advanced Microcontrollers Motorola Semiconductor Products, Canada Sales Offices Vancouver 604 293-7605 Toronto (416) 497-8181 Ottawa (613) 226-3491

cpu 226

Abstract: ST72 ST72361 TQFP32 TQFP44 TQFP64 TIM16 062d
Contextual Info: ST72361 8-BIT MCU WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, 2x LINSCI • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices

RBS 2201

Abstract: cpu 226 155G CRC-10 CRC32 HQFP240 MB86698A MC68040 MC68060 MPC860
Contextual Info: Product Datasheet 2.1 2000 MB86698A FireStream 155G April 2000 Version 2.1 ATM 155Mbps SAR Device The FireStreamTM155G is a high performance ATM protocol controller which autonomously terminates ATM Adaptation Layer standard Type 5 AAL5 . ATM cells are passed via a UTOPIA v2.01 compliant

Contextual Info: ST7FOXF1, ST7FOXK1, ST7FOXK2 8-bit MCU with single voltage Flash memory, SPI, I²C, ADC, timers Features • ■ ■ Memories – 4 to 8 Kbytes single voltage extended Flash XFlash Program memory with Read-Out Protection In-Circuit Programming and In-Application

ST7FOXK1

Abstract: ZC186
Contextual Info: ST7FOXF1, ST7FOXK1, ST7FOXK2 8-bit MCU with single voltage Flash memory, SPI, I²C, ADC, timers Features • ■ ■ Memories – 4 to 8 Kbytes single voltage extended Flash XFlash Program memory with Read-Out Protection In-Circuit Programming and In-Application

jrc 072 cdm

Abstract: ST7FOXF1 st7foxk1 8 pins AN1324 DIP20 HE10 LQFP32 SDIP32 SO20 IC INVERTER 8-bit
Contextual Info: ST7FOXF1, ST7FOXK1, ST7FOXK2 8-bit MCU with single voltage Flash memory, SPI, I²C, ADC, timers Features • ■ ■ Memories – 4 to 8 Kbytes single voltage extended Flash XFlash Program memory with Read-Out Protection In-Circuit Programming and In-Application

DEMD9PJK87

Abstract: dbmd25sja197 DAMP15SJA197 DAMG15SJA197 DEMCP9PJK87 DDMG50SJA197 DEMC-9S-J-A197 DBMC25SJA197 DDMD50SJA197 demG9p
Contextual Info: 2: 5: SYS06: BASE1 50: 95: 98: JOB: IC931Z-P00016-21 100: Name: D-SUBMINIATURE DATE: MAR 4 1998 Time: 1:50:55 PM Operator: BC COLOR: BLACK TCP: 666 Typedriver Name: TS name csm no.: 100 D Subminiature Zoom: 100 D*M 90° Solder Termination Machined — Standard Footprint .318ɍ or .283 inchɍɍ

Contextual Info: V23990-P825-F-PM preliminary datasheet Output Inverter Application flowPACK 1 3rd gen 600V/100A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 4 Ω Rgoff = 4 Ω IGBT Figure 1 Typical average static loss as a function of output current

F100-5

Abstract: 8b3s 872s
Contextual Info: S L A 8 0 0 0 s e rie s CMOS HIGH SPEED GATE ARRAY • DESCRIPTION The SLA8000 Series is a super-high-speed, densely-packaged master slice CMOS gate array sea of gates . The SLA8000 Series comes in seven models. They can accommodate up to 16K usable gates to

CERAMIC QUAD FLATPACK CQFP

Abstract: BGA PACKAGE thermal resistance P603E DL10 DL12 WMC64P603EV-XQ3M DH0-31 P603
Contextual Info: WMC64P603EV-XQ3M RISC 603e MONOLITHIC MICROPROCESSOR PRELIMINARY* FEATURES • Processor Clock Frequencies of 80MHz and 100MHz • 16KByte data cache–four-way set-associative, physically addressed; Least Recently Used LRU replacement algorithm ■ Military Operating Temperature Range

872S

Abstract: 837s 8b3s aA88
Contextual Info: S-M S SYSTEMS INC 31E D • 7^35^0^ 0000=577 b * S M 0 S L A 8 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY ■ DESCRIPTION The SLA8000 Series is a super-high-speed, densely-packaged master slice CMOS gate array sea of gates . The SLA8000 Series comes in seven models, They can accommodate up to 16K usable gates to

program code for assembly language dc motor control with

Abstract: TMS320F240 MCK240 acpm750 AC Motor Speed Controller motor speed control by using dsp DC MOTOR SPEED CONTROL USING IGBT sensorless bldc blac motor brushless ACPM-750
Contextual Info: MCK240 TMS320F240 DSP Motion Control Kit Hardware Specifications MCK240 Board equipped with : • DSP motion controller TMS320F240 with 16kWords of flash EPROM • 32K words 0 wait state SRAM external data/program memory • 3 phase PWM inverter, 30V, 1.7 A

ABB A29 30 10

Abstract: DL10 DL12 dh23 CQFP 172 PIN
Contextual Info: WMC64P603P-200Q3M RISC 603e MONOLITHIC MICROPROCESSOR PRELIMINARY* FEATURES • Processor Clock Frequency of 200MHz • 16KByte data cache–four-way set-associative, physically addressed; Least Recently Used LRU replacement algorithm ■ Military Operating Temperature Range

Contextual Info: WS57C128FB HIGH SPEED 16Kx 8 CMOS EPROM K E Y FEATURES • Fast Access Time • EPI Processing — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-87661 • Standard EPROM Pinout • DIP and Surface Mount Packaging

Contextual Info: * 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR FEATURES SY10480-6 DESCRIPTION • Address access time, tAA: 6ns max. ■ Chip select access time, tAc: 3ns max. The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and

UM5507

Abstract: microphone preamp agc
Contextual Info: UM5507 8 sec. Recording/Playback 1C Preliminary Features • Operating voltage 4 V - 6 V ■ ■ ■ ■ ■ ■ ■ Recording length is 8 seconds of sampling rate 16K Built-in 128 K bits SRAM Directly drive speaker one or two sections record/play mode PLAY option and Record busy signal to drive LED

QS8888

Abstract: HA1221
Contextual Info: QS8888A ô High-Speed CMOS 16Kx4 SRAM with Common I/O QS8888A Preliminary FEATURES/BENEFITS 8ns/10ns/12ns/15ns Commercial 10/12ns/15ns/20ns Military TTL compatible I/O • Low power, high-speed Q CM O S technology • Military product compliant to M IL-STD-883, Class B

QS8888

Contextual Info: QS8888A High-Speed CMOS 16Kx4 SRAM Ô QS8888A Preliminary with Common I/O F E A T U R E S /B E N E F IT S • • • • • 8ns/10ns/12ns/15ns Commercial 10/12ns/15ns/20ns Military TTL compatible I/O Low power, high-speed Q C M O S technology Military product compliant to MIL-STD-883, Class B

2116 ram

Abstract: intel 2116
Contextual Info: inter 3242 ADDRESS MULTIPLEXER AND REFRESH COUNTER FOR 16K DYNAMIC RAMs • Single Power Supply: +5 Volts ±10% ■ Ideal For 2116 ■ Simplifies System Design ■ Address Input to Output Delay: 9ns Driving 15 pF, 25ns Driving 250pF ■ Reduces Package Count

FCF05FT

Contextual Info: 信昌電子陶瓷股份有限公司 Prosperity Dielectrics Co., Ltd. No. 148, Chang-An Road, Sec 1,Lu-Tsu Shiang, Taoyuan, Taiwan, ROC. Tel.：886-3-3224471 Fax：886-3-3212216 SPECIFICATION FOR APPROVAL DATE: CUSTOMER: PART NAME: LIMITED COMPANY Anti-Sulfurated Thick Film Chip Resistors

Contextual Info: 28C17A DICE FORM Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • 250ns Access Time • CMOS Technology for Low Power Dissipation — 30mA Active — 100|iA Standby • Fast Byte Write Time— 1ms • Automatic Write Operation

Contextual Info: 001530 16K BYTE STATIC RAM MODULE WWhite DHC8-M16 Technology, Inc. Advance Information - r - r FEATURES • Operates From -55° C to +200° C • 16K Bytes Static CMOS RAM Module • Low Operating and Standby Power Consumption • In-Module Address Decoding and

UM61

Abstract: um6116 UM6116-2 umg1 umc um61 2kx8 EPROM 16KEPROM AFLC
Contextual Info: 2Kx8 CMOS SRAM Features q q n Single i-5 volt power supply Acccss limes 90/120 ns max. Currcn : Standard version 0perating: Standby: m Pin compatible with Standard 16K EPROM/Mask R O M n UMG1 16-2/-3 ” UM6116-2L/-3L 1 0 0 mA (max.) 5 0 /JA ( m a x . )