226AC Search Results

MMBD201

Abstract: MMBD501 MBD201 MBD101 MBD501
Contextual Info: r AT 89D 77456 367255 MOTOROLA SC <DIODES/OPTO D - o '! DE | t,3t,72S5 007745b T Hot-Carrier Schottky) Diodes / / / / * % CASE 182-02 (TO-226AC) TO-92 CASE 318-02 (TO-236AA) Standard Hot-Carrier diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency

Contextual Info: £ PART NUMBER: 226ACZ050M LO W E R IMPEDANCE SURFACE MOUNT ALUMINUM ELECTRO LYTIC P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 17 ELECTRICAL SPECIFICATIONS C apacitance: 22 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.12 Max at 120 Hz and 20°C

Contextual Info: PART NUMBER: 226ACZ035M +105°C, LOWER IMPEDANCE 1000 TO 2000 HOURS PARTS ARE ROHS COMPLIANT FEATURES APPLICATIONS very Low impedance, high frequency, small size switching power supplies, input filtering ELECTRICAL SPECIFICATIONS C apacitance: 22 uF T ole ra n ce: -20 % , +20 %

Contextual Info: SILICO N PIN DIODE MPN3404* . . . d e s ig n e d p r im a rily fo r V H F b a n d s w itc h in g a p p lic a tio n s b u t also s u ita b le CASE 182-02, STYLE 1 TO-226AC fo r use in g e n e ra l-p u rp o s e s w itc h in g circuits. S u p p lie d in a cost e ffe c tiv e

MTS105

Abstract: MMBTS105 MTS103 MMBTS102 5C sot23 MMBTS103 MTS102
Contextual Info: SENSORS continued % /I/II/ Case 29-02 t Case 318-02 li(l I TO-226AC | (SOT23) u (TO-92) - tem perature Sensors Solid-state tem perature sensing devices designed for use in extreme tem perature ranges requiring high accuracy and

MVAM109

Abstract: MVAM108 MV209 diode MVAM115 MMBV105G MMBV109 TO-226AC MOTOROLA mvam108 cf 318 MMBV3102
Contextual Info: 6367255 MOTOROLA SC DIODES/OPTO — - 89D 77454 Hyper-Abrupt Junction Tuning Diodes ^ D " T v ’7 - / i? D F |h3b7aS S 0D774S1 • FM Radio and TV TYPICAL CHARACTERISTICS High Q Style 8 CASE 318-02 (TO-236AA) Style 1 CASE 182-02 (TO-226AC) TO-92 * C j Capacitance ? '

MV2301

Abstract: MV1404 MBD501 MV2303 TO-226AC LSE 405 MV1403 MV1405 MV2302 MV2304
Contextual Info: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) High-Capacitance Tuning Diodes . for tuning applications in lower RF frequencies. M AXIM UM W O RKING VOLTAGE /? // V CASE 182 TO-226AC (TO-92) / / 12 VOLTS 20 VOLTS ' C A S E 51

MBD501

Contextual Info: R3S725S ~ÉH M O TO RO LA SC 89D < 0 IO D E S /O P T O T“-o*7-o'l 77456 DE I t,3ti7SSS 007745b T J~~ Hot-Carrier Schottky) Diodes CASE 318-02 (TO-236AA) Standard CASE 182-02 (TO-226AC) TO-92 Hot-Carrier diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency

Contextual Info: £ PART NUMBER: 226ACZ035M LO W E R IMPEDANCE SURFACE MOUNT ALUMINUM ELECTRO LYTIC P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 17 ELECTRICAL SPECIFICATIONS C apacitance: 22 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.12 Max at 120 Hz and 20°C

MMBV3700LT1G

Abstract: MMBV3700LT1 MPN3700 MPN3700G
Contextual Info: MMBV3700LT1, MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for

CR SOT-23

Abstract: MMBV109LT1 DIODE M4A marking C3 sot-23 MBV109T1 MMBV109L MV209 SMD310
Contextual Info: MOTOROLA Order this document by MBV109T1/D SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods.

Contextual Info: MOTOROLA Order this document by MBD301/D SEMICONDUCTOR TECHNICAL DATA MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital

MV2105

Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

MBD701

Abstract: Surface Mount RF Schottky Barrier Diodes
Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

BAT54M3T5G

Abstract: 419C-02 MMVL3700T1
Contextual Info: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40

709 SOT23

Abstract: marking 4T sot-23
Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MMBV409LT1

Abstract: MV409 SMD310
Contextual Info: ON Semiconductort MMBV409LT1 Silicon Tuning Diode ON Semiconductor Preferred Device These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

MV209

Abstract: MV209 diode MMBV109LT1 SMD310 MMBV109LT1 marking
Contextual Info: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular