22AUG06 Search Results

BZE6-2RN18-C3

Contextual Info: MCRO SWITCH a Honeywell Division FED. MF9• CODE CATALOG SWITCH - LISTING B Z E 6 -2 R N 1 8 -C 3 ENCLOSED 9192B tr> 1 1.00 • - ACROSS FLATS 00 z 6 - 3 2 UNC X .312 FLAT HEAD SELF LOCKING SCREW 4X SEAL RING (X CM 2X 6 - 3 2 UNC HEX NUT 1 CO LJ 2X 6 - 3 2 UNC X (1.750) ROUND

MBRF20H150CT

Contextual Info: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Contextual Info: FEP30AP thru FEP30JP Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low thermal resistance 3 2 • High forward surge capability

Contextual Info: SBL4030PT & SBL4040PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 1 • High frequency operation

VTS40100CT

Abstract: VB40100C
Contextual Info: VTS40100CT, VF40100C, VB40100C & VI40100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 AUGUST ,2006- LOC ALL RIGHTS RESERVED. REVISIONS DIST E B P NOTES: D B A PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUGUST ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR NOTES: DESCRIPTION B /K PACK IN ACCORDANCE WITH AMP SPEC 107-3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275

47821

Abstract: ECRE
Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T 2006 By P U B L IC A T IO N R IG H TS A U G U S T ,2 0 0 6 - REVISIO N S RESERVED. E - LTR D E S C R IP T IO N NOTES: ECR- /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 /K

V80100P

Abstract: JESD22-B102D J-STD-002B v80100
Contextual Info: V80100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A FEATURES • Trench MOS Schottky Technology • Low forward voltage drop, low power losses • High efficiency operation

MBR10H90CT

Contextual Info: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency

Contextual Info: MBR40H35PT thru MBR40H60PT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency

MBR25H35CT

Contextual Info: MBR F,B 25H35CT thru MBR(F,B)25H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency

MBR30H60CT

Abstract: MBR30H35CT MBR30H45CT-E3/45 MBRB30H45CT JESD22-B102D J-STD-002B MBR30H45CT
Contextual Info: MBR F,B 30H35CT thru MBR(F,B)30H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency

2535CT

Abstract: MBR2545CT-E3/45 MBRB2545CT-E3 JESD22-B102D J-STD-002B MBR2535CT
Contextual Info: MBR F,B 2535CT thru MBR(F,B)2560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency ITO-220AB • Low forward voltage drop • High forward surge capability

Contextual Info: 12 11 10 I B SYMBOL D E FIN ITIO N A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL C~ DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. H CD MISSING SYMBOLS TOTAL NO OF INSPECTIONS REQUIRED 10 LAST NO. USED 10 NO MISSING

m6045c

Contextual Info: M6035C thru M6060C New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guarding for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation

15H60CT

Abstract: MBR15H35CT
Contextual Info: MBR F,B 15H35CT thru MBR(F,B)15H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF15HxxCT

Contextual Info: SBL F,B 1030CT & SBL(F,B)1040CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability

Contextual Info: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability

transistor smd qe

Abstract: 15MPA0566-QE
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN 15MPA0566-QE August 2006 - Rev 22-Aug-06 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing Chip Device Layout General Description

1535CT

Abstract: MBR1550CT JESD22-B102D J-STD-002B MBR1535CT 1560CT B1535CT
Contextual Info: MBR F,B 1535CT thru MBR(F,B)1560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

MBR4060PT

Abstract: JESD22-B102D J-STD-002B MBR4035PT MBR4045PT MBR4050PT
Contextual Info: MBR4035PT thru MBR4060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 1 • High frequency operation

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 AUG ,2006- LOC ALL RIGHTS RESERVED. E 1 REVISIONS DIST B NOTES: D LTR B /\ PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275