22G DIODE Search Results

HL6321

Contextual Info: HL6321/22G AlGaInP Laser Diodes Description The HL6321/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers

HL6321G

Abstract: HL6322G Hitachi DSA00230
Contextual Info: HL6321G/22G AlGaInP Laser Diodes ADE-208-598C Z 4th Edition Dec. 2000 Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

Contextual Info: HL6321/22G AlGaInP Laser Diodes Description The HL6321/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers

Contextual Info: HL6321/22G AlGalnP Laser Diodes H IT A C H I Description The HL6321/22G are 0.63 |am band AlGalnP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application

HL6321G

Abstract: HL6322G
Contextual Info: HL6321G/22G ODE-208-028A Z Rev.1 Oct. 24, 2006 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

laser diodes hitachi

Abstract: Hitachi laser diodes
Contextual Info: HL6321/22G AlGalnP Laser Diodes HITACHI Description The HL6321/22G are 0.63 J im band AlGalnP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers

Contextual Info: HL6321G/22G ODE-208-028B Z Rev.2 Feb. 01, 2008 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

HL6321G

Abstract: HL6322G
Contextual Info: HL6321G/22G AlGaInP Laser Diodes ODE-208-598D Z Rev.4 Jan. 2003 Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

Contextual Info: HL6321G/22G ODE2012-00 M Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

Contextual Info: HL6321G/22G ODE-208-028A Z Rev.1 Oct. 24, 2006 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

Contextual Info: Data Sheet HL6321G/22G AIGaInP Laser Diode 638nm/15mW Features: Outline • Optical output power: 15mW CW  Visible light output: 638nm Typ.  Low operating current: 100mA Max.  Low operating voltage: 2.7V Max.  TM mode oscillation  Single transverse mode

P8B-D04-22G-525

Contextual Info: Yokohama Electron LED Lighting Solutions P8B-D04-22G-525 １ ． Part Number: RoHS Compliant Color： Green ２ ． Outer Dimensions / LED wiring diagram / Recommended pattern SMD TYPE DIP TYPE φ0.7 φ7.0 φ6.0 Cathode 4.6 ESD Protection Diode 2.5 2

HL6321

Contextual Info: Data Sheet HL6321G/22G AIGaInP Laser Diode Outline 638nm/15mW Features: • Optical output powr: 15mW CW  Visible light output: 638nm Typ.  Low operating current: 100mA Max.  Low operating voltage: 2.7V Max.  TM mode oscillation  Single transverse mode

Contextual Info: 1N286A Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX-K Test Freq16G Frequency Min. (Hz)10G Frequency Max. (Hz)22G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max.2.0 Noise Figure Max. (dB)

801R2AN

Abstract: SML801R2AN SML751R2AN NC160 22G diode SML751R4AN SML801R4AN 801R4AN
Contextual Info: SEMELÂB PLC bOE D fll331û? OGOG77fl 22G ISMLB MOS POWER à IN I SML801R2AN SML751R2AN SML801R4AN SML751R4AN SEME LAB 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20Q 1.2011 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT160 Unit : mm Weight : 22g typ. Package TSB-5PIN 1600V 45A • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 160 0264 ∼ ∼ 27 ∼ − 管理番号（例）

Contextual Info: SCHOTTKY BARRIER DIODE C30T03QL C30T03QL-11A 33A/30V FEATU RES o | SQ UA RE-PA K I TO-263AB SMD Packaged in 24mm Tape and Reel : C30T03QL o Tabless TO-22G C30T03QL-11A o Dual Diodes - C athode Com m on ° Low Forw ard Voltage D rop ° H igh Surge Capability

Contextual Info: Bridge Diode Large I o Single In-line Package OUTLINE D50XB80 Unit : mm Weight : 22g typ. Package TSB-4PIN 800V 50A 品名 Type No. • SIP • UL E142422 IFSM • • • ＋ ① ~ ② ∼ ④ − ⑤ ＋ SHINDENGEN D50XB 80 0264 ∼ 27 ∼ − 管理番号（例）

Contextual Info: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 45A 品名 Type No. • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 80 0264 ∼ ∼ 27 ∼ −

Contextual Info: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D30XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 30A 品名 Type No. • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D30XT 80 0264 ∼ ∼ 27 ∼ −

D45X

Abstract: 330 marking diode SHINDENGEN DIODE SHINDENGEN
Contextual Info: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422

Contextual Info: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422

Contextual Info: 大容量 シングルインライン型 Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D50XB80 Unit : mm Weight : 22g （typ.） Package：TSB-4PIN 800V 50A 特長 品名 Type No. • 薄型 SIP パッケージ • UL E142422 • 高耐圧・高 IFSM

D30XT80

Contextual Info: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D30XT80 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 800V 30A 特長 品名 Type No. • ３相ブリッジ • 薄型 SIP パッケージ