22JUL96 Search Results

Si6331DQ

Abstract: TSSOP-28
Contextual Info: Si6331DQ Triple N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 TSSOP-28 D1 S1 S1 G1 D1 D2 S2 S2 G2 D2 D3 S3 S3 G3 1 D 28 2 27 3 26 4 25 5 24 6 23 7 22 4.4 mm 8 9 20 9.7 mm 10

Si6801DQ

Contextual Info: Si6801DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 D1 S1 S1

Si6459DQ

Contextual Info: Si6459DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6459DQ G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Contextual Info: TH I 5 DRA W I N G IS COPYRIGHT UNPUBLI SHED. RELEASED 19 BY AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS LOC . I9 EY RESERVED. D I ST R E V I S IO N S 24 LTR DATE DESCRIPTION R L S D ; N P R C96- I I 3 WIRE STUFFER EACH W I R E E N TR Y HOLE S O L I D C O P P E R 2 2 - 2 4 OR

TSSOP28P

Abstract: 32-DQ
Contextual Info: Temic SÌ6332DQ Semiconductors Triple P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 I d (A) ±4.5 ±3.4 rDS(on) (^ ) 0.040 @ VGs = -10 V 0.070 @ VGS = -4.5 V p o '« 6 TSSOP-28 ne "Source Pins 2, 3, 25, 26, and 27 must be tied common. Source Pins 7, 8, 20, 21, and

Si6801DQ

Contextual Info: Si6801DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 D1 S1 S1

Si6332DQ

Abstract: TSSOP-28
Contextual Info: Si6332DQ Triple P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 TSSOP-28 D1 S1 S1 G1 D1 D2 S2 S2 G2 D2 D3 S3 S3 G3 1 D 28 2 27 3 26 4 25 5 24 6 23 7 22 4.4 mm 8 9 20

U2789B-AFS

Abstract: SSO20 18CP210
Contextual Info: U2789B-AFS 2000 MHz / 200 MHz Twin PLL Description U2789B is a low power twin PLL manufactured with TEMIC’s advanced UHF process. The maximum operating frequency is 2000 MHz and 200 MHz respectively. It features a wide supply voltage range from 2.7 to 5.5 V. Prescaler and power down function for both PLL’s

Si6361DQ

Abstract: TSSOP-28 n channel mosfet 500 mA 400 v
Contextual Info: Si6361DQ Triple Complementary Half-Bridge Product Summary VDS V N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.6 0.095 @ VGS = 4.5 V "3.0 0.085 @ VGS = –10 V "3.1 0.19 @ VGS = –4.5 V "2.1 TSSOP-28 D1 NS1 NS1 NG1 D1 D2 NS2 NS2 NG2

Si4948EY

Contextual Info: Si4948EY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET

SI6331DQ

Abstract: si6331
Contextual Info: Tem ic SÌ6331DQ S e m i c o n d u c t o r s Triple N-Channel 30-V D-S Rated MOSFET Product Summary Vd s (V) 30 rDS(on) (ß ) Id (A) 0.028 @ V GS= 10 V ±5.6 0.042 @ V Gs = 4.5 V ±4.5 sr pO'N TSSOP-28 "Source Pins 2, 3, 25, 26, and 27 m ust be tied common.

S3 diode

Abstract: Si6331DQ TSSOP-28
Contextual Info: Si6331DQ Triple N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 TSSOP-28 D1 S1 S1 G1 D1 D2 S2 S2 G2 D2 D3 S3 S3 G3 1 D 28 2 27 3 26 4 25 5 24 6 23 7 22 4.4 mm 8 9.7 mm 10 11 21

Si6332DQ

Abstract: TSSOP-28 si6332
Contextual Info: Si6332DQ Triple P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 TSSOP-28 D1 S1 S1 G1 D1 D2 S2 S2 G2 D2 D3 S3 S3 G3 1 D 28 2 27 3 26 4 25 5 24 6 23 7 22 4.4 mm 8 9 20