22MAR04 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DWN date TEV PER 0G 3H — 0 0 8 2 — 04- 22MAR04 APVD JR MS D D .390 DIA. MAX 3 DIMPLES EQUALLY SPACED

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 8 2 — 04 DWN 22MAR04 APVD JR MS D D .±.025 + .0 10 + .010 .140 - 1

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 50 LTR DATE DWN APVD 22MAR04 JR MS DESCRIPTION REV PER 0G3H— 0 0 8 2 — 04 D D + .02 5 — .415 ± .02 5 1.185

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G 3H —0 0 8 2 —0 4 DATE DWN APVD 22MAR04 JR MS D D ±.005 ,650 ±.030 2.800 ±.025

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 8 2 — 04 DWN 22MAR04 APVD JR MS D D ±.010 B B CDLDR CDDED PURPLE

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DWN DATE REV PER 0G3H— 0 0 8 2 — 04 22MAR04 APVD JR MS D D +.005 ,5 2 5 +.030 3 .9 0 0 +.010

full swing pierce oscillator

Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12OSCLCPV1/D Freescale Semiconductor, Inc. OSC_LCP Block Guide V01.04 Original Release Date: 17 JUL 2002 Revised: 17 June 2004 Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its

PART MARKING

Abstract: 72866 SC-89 sC89-6 SC-89-6 SC89-3 VISHAY SOT LOT CODE SOT 89 marking CODE Package Marking Information SOT-666
Contextual Info: Part Marking Information Vishay Siliconix DEVICE: SC-75A and SC-89 Devices SC-89-6 SC-75A and SC-89-3 D AWL Pin 1 AWL Pin 1 D = Pin 1 Indicator1 A = Part Number Code2, 3 W = Week Code3 L = Lot Code NOTES: 1. For dual symmetrical SC-89, additional dot will be marked at top right corner pin 4 .

mcp555

Abstract: mcp55 M616Z08
Contextual Info: M616Z08 128 Kbit 8 Kbit x16 SRAM with Output Enable FEATURES SUMMARY • ■ ■ ■ ■ OPERATION VOLTAGE: 2.34V TO 3.6V 8 Kbit x16 SRAM EQUAL CYCLE and ACCESS TIMES: AS FAST AS 20ns TRI-STATE COMMON I/O TWO WRITE ENABLE PINS ALLOW WRITING TO UPPER AND LOWER BYTES

Contextual Info: 2 T H I S DRAWING IS U N P U B L IS H E D . C O P Y RI G H T 2 0 R E L E A S E D FOR P U B L I C A T I O N LOC BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R |3 H T S R E S E R V E D . REV I S I ONS D I ST 00 LTR DE SC R I P T I O N DWN

Contextual Info: 2 T H I S DRAWING IS U N P U B L IS H E D . C O P Y RI G H T 2 0 R E L E A S E D FOR P U B L I C A T I O N LOC BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R |3 H T S R E S E R V E D . REV I S I ONS D I ST 00 LTR DE SC R I P T I O N DWN

sot-23 marking code 20W

Abstract: BAS19 BAS21 BAV100 BAV103 BAV19 BAV19W BAV19WS BAV21 BAV21WS
Contextual Info: BAV19W / 20W / 21W VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diodes • For general purpose • These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case

4425b

Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Contextual Info: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station

SOT-563 SOT-666

Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W

EIA-583

Abstract: manson 925 LH1526 iso 900x TS16946 Coffin-Manson exponent
Contextual Info: VISHAY Vishay Semiconductors Quality Information Corporate Quality Policy Our goal is to exceed the quality expectations of our customers. This commitment starts with top management and extends through the entire organization. It is achieved through innovation, technical excellence

sfernice

Abstract: sfernice 0805 Vishay PHR
Contextual Info: PHR Vishay Sfernice Very High Precision, Very High Stability Thin Chip Resistors FEATURES • Load Life Stability at ± 70°C For 2000 hours: 0.15% under Pn • Low Temperature Coefficient down to ± 10ppm/°C • Very Low Noise and Voltage Coefficient • Resistance Range: 50Ω to 1MΩ depending on size

0.6uH inductor

Abstract: inductor design book IHLP-5050CE-07
Contextual Info: IHLP-5050CE-07 Vishay Dale Current Sense, 5% DCR Tolerance, Low Profile, Power Inductor FEATURES • • • • • • • Lowest height 3.5mm in this package footprint. Shielded construction. Frequency range up to 5.0MHz. Lowest DCR/µH, in this package size.

IHLP-2525CZ-06

Contextual Info: IHLP-2525CZ-06 Vishay Dale Current Sense, 10% DCR Tolerance, Low Profile, Power Inductor FEATURES • Lowest height 3.0mm in this package footprint. • Shielded construction. • Frequency range up to 5.0MHz. • Lowest DCR/µH, in this package size. • Handles high transient current spikes without saturation.

Contextual Info: PHR Vishay Sfernice Very High Precision, Very High Stability Thin Chip Resistors FEATURES • Load Life Stability at ± 70°C For 2000 hours: 0.15% under Pn • Low Temperature Coefficient down to ± 10ppm/°C • Very Low Noise and Voltage Coefficient • Resistance Range: 50Ω to 1MΩ depending on size

MD-3005

Abstract: cat811 marking CAT811 CAT812 MAX811 MAX812
Contextual Info: CAT811, CAT812 4-Pin Microprocessor Power Supply Supervisors with Manual Reset FEATURES DESCRIPTION  Precision monitoring of +5.0 V ± 5%, ± 10%, ± 20% , +3.3 V (± 5%, ± 10%), +3.0 V (± 10%) and +2.5 V (± 5%) power supplies  Manual reset input

STM1001

Contextual Info: STM1001 Reset Circuit FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ PRECISION MONITORING OF 3V, 3.3V, and 5V SUPPLY VOLTAGES OPEN DRAIN RST OUTPUT 140ms RESET PULSE WIDTH min LOW SUPPLY CURRENT - 6µA (typ) GUARANTEED RST ASSERTION DOWN TO VCC = 1.0V OPERATING TEMPERATURE:

Contextual Info: 426 MHz Bandpass Filter 5.16 MHz Bandwidth Part Number SF0426CN02357S Micro Networks 324 Clark Street Worcester, MA 01606 USA Tel:508-852-5400 Fax:08-852-8456 www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 5 MHz/div Vertical from top : Magnitude Magnitude

on semiconductor marking code sot

Abstract: marking 2 AW Marking transistor SOT 89 marking CODE vishay siliconix code marking marking code vishay SILICONIX SOT666 marking code diode 04 marking sc PART NUMBER MARKING
Contextual Info: Part Marking Information Vishay Siliconix DEVICE: SC-89 SOT-666 ONLY Devices SC-89 (SOT-666)1 AW Pin 1 A = Part Number Code2 W = Week Code3 NOTES: 1. Pin 1 denoted by orientation of marking. Pin 1 is lower left corner of upright text. 2. See data sheet for code.

AN1012

Abstract: M48Z32V SOH44
Contextual Info: M48Z32V 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, AND POWER-FAIL CONTROL CIRCUIT READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION WRITE PROTECT VOLTAGES: