22SEP08 Search Results
22SEP08 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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V7-1C17D8-002
Abstract: i8700 FO503
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FO-50360-L CW-B1651 22SEP08 060MAX 1C17D8-002 FORCE----160 V7-1C17D8-002 V7-1C17D8-002 i8700 FO503 | |
D12-CRCW0805
Abstract: E48-series crcw1206 D11-CRCW0603 crcw0603 ms1 Resistors CRCW0402 LAE1KCHIP1206NJE24 crcw0805 LAE1ACHIP0805NJE24
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D25/CRCW1206, D12/CRCW0805, D11/CRCW0603, D10/CRCW0402 E48-series LAE1FCHIP0402NJE24 LAE1GCHIP0402KFE48 LAE1BCHIP0603NJE24 D12-CRCW0805 crcw1206 D11-CRCW0603 crcw0603 ms1 Resistors CRCW0402 LAE1KCHIP1206NJE24 crcw0805 LAE1ACHIP0805NJE24 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 11-Mar-11 | |
Contextual Info: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch |
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SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 | |
SiP12203
Abstract: Si1972DH
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SiP12203 18-Jul-08 Si1972DH | |
VESD05A5A-HSF-GS08
Abstract: 20453 LLP75-6L 81655
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VESD05A5A-HSF LLP75 LLP75-6L 2002/95/EC 2002/96/EC 18-Jul-08 VESD05A5A-HSF-GS08 20453 81655 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si4944dy-t1-e3Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT |
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Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 VDS (V) 20 0.025 at VGS = 2.5 V • Halogen-free Qg (Typ.) • TrenchFET Power MOSFET RoHS 10 nC 6 COMPLIANT APPLICATIONS |
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Si5432DC Si5432DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT |
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Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 11-Mar-11 | |
Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 11-Mar-11 | |
Contextual Info: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK® |
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SiS406DN SiS406DN-T1-GE3 11-Mar-11 | |
marking tm tsop-6
Abstract: Si5432DC
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Si5432DC Si5432DC-T1-GE3 11-Mar-11 marking tm tsop-6 | |
A1930Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 11-Mar-11 A1930 | |
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SUD50P06-15
Abstract: c495-0
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SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 SUD50P06-15 c495-0 | |
Contextual Info: VESD05A5A-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75 Features • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 13 pF ESD-immunity acc. IEC 61000-4-2 |
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VESD05A5A-HS3 LLP75 LLP75-6A 2002/95/EC 2002/96/EC VESD05A5A-HS3 VESD05A5A-HS3-GS08 2011/65/EU 2002/95/EC. | |
SiR470DP
Abstract: S-8229 sir470dp-t1-ge3
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SiR470DP SiR470DP-T1-GE3 18-Jul-08 S-8229 | |
SiR850DP-T1-GE3Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 15lectual 18-Jul-08 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 18-Jul-08 | |
Contextual Info: 1 SPICE Device Model Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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Si7748DP 18-Jul-08 | |
Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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SiR468DP SiR468DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch |
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SUM75N15-18P O-263 SUM75N15-18P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested |
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SiR850DP SiR850DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification |
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SiR492DP SiR492DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |