2300 TRANSISTOR REPLACEMENT TABLE FOR TRANSISTOR Search Results
2300 TRANSISTOR REPLACEMENT TABLE FOR TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GCM32ED70J476KE02L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive |
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| GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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| GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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| GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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| GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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2300 TRANSISTOR REPLACEMENT TABLE FOR TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF2425M7L100; BLF2425M7LS100 ACPR885k IS-95 IS-95 BLF2425M7L100 2425M7LS100 | |
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Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P | |
smd transistor 2300Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 2 — 1 March 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 | |
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Contextual Info: BLF2324M8LS200P Power LDMOS transistor Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. |
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BLF2324M8LS200P | |
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Contextual Info: BLF8G24LS-200PN Power LDMOS transistor Rev. 1 — 20 January 2014 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF8G24LS-200PN | |
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Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P | |
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Contextual Info: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100 | |
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Contextual Info: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
Original |
BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140 | |
smd transistor 2300
Abstract: BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor
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BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor | |
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Contextual Info: BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. |
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BLS7G2325L-105 | |
smd transistor 2300Contextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 5 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
Original |
BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 | |
BLS7G2325L-105Contextual Info: BLS7G2325L-105 Power LDMOS transistor Rev. 1 — 1 March 2011 Objective data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance |
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BLS7G2325L-105 BLS7G2325L-105 | |
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Contextual Info: BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. |
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BLS7G2325L-105 2002/95/EC, | |
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Contextual Info: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140 | |
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Contextual Info: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P | |
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Contextual Info: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-100; BLF7G24LS-100 ACPR885k IS-95 IS-95 BLF7G24L-100 7G24LS-100 | |
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Contextual Info: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-140; BLF7G24LS-140 ACPR885k IS-95 IS-95 BLF7G24L-140 7G24LS-140 | |
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Contextual Info: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P | |
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Contextual Info: BLC8G24LS-240AV Power LDMOS transistor Rev. 1 — 26 September 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. |
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BLC8G24LS-240AV | |
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Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance |
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BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P | |
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Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance |
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BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P | |
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Contextual Info: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 01 — 14 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
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BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k IS-95 BLF7G24L-100 7G24LS-100 | |
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Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 01 — 29 March 2010 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance |
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BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P BLF7G27LS-75P | |
BLF7G24LS-160PContextual Info: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 1 — 10 February 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance |
Original |
BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P BLF7G24LS-160P | |