237 6V8 Search Results

bzv16c

Abstract: 18516 bzv 4v7 BZV18 BZV16C200 BZV16C3V3 DEZ18516 bzv 40 16c68 e6v2
Contextual Info: S G STC S —THOMSON O TH0MS0N-C5F 59C 024-44 D | 7=^237 0002444 D B Z V 16 C 3V3 —- BZV16C200 DIVISION SEM ICO N D UCTEURS • ZENER DIODES DIODES ZENER 3 W silicon Z e n e r diodes, hermetically sealed metal according to normalization C C T U : F 61 offering the follow ingadvantages :

BZX marking diode

Abstract: ZENER DIODE 6.2V bzx 85 c 55C 3v3 zener diode ratings BZX 55 C 5V 8 zener BZX 55c 4v7 diode zener bzx 55 B 15 diode zener 6v2 BZX diode zener 6V8 BZX C 55 zener BZX 55c 5v1 zener BZX 55c 5v6
Contextual Info: SbE D • 7^2^237 DD41577 33T ■ SGTH £ = 7 S G S -T H O M S O N ^ 7 # « le m iig e re ts im e s S G S-THOMSON T-u-u B Z X 55 C 0 V 8 2 00 ZENER DIODES ■ ■ ■ ■ LARGE VOLTAGE RANGE : 0.8V TO 200V DOUBLE SLUG TYPE CONSTRUCTION PRO ELECTRON REGISTRATION

zener BZX 4v7

Abstract: zener BZX 3V3 zx 55 DD41577 zener BZX 79 4v7 k 153 p BZX55C bzx 62
Contextual Info: SbE D • 7^2^237 DD41577 33T ■ SGTH £ = 7 S G S -T H O M S O N ^ 7 # « le m iig e re ts im e s S G S-THOMSON T-u-u B Z X 55 C 0 V 8 2 00 ZENER DIODES ■ ■ ■ ■ LARGE VOLTAGE RANGE : 0.8V TO 200V DOUBLE SLUG TYPE CONSTRUCTION PRO ELECTRON REGISTRATION

fdk vco 004

Abstract: 14L4 16L2 16L8 16R8 GAL16V8 GAL16V8S PDIP20 PLCC20 64X32
Contextual Info: SbE » • 7^237 S G S -1 H O M S O N DOMSIMT 73T ■ SGTH s 6 s-T H o n so N I[L J « M 0 g S G A L I 6 V 8 S T -H é -n -0 7 E2PR0M CMOS PROGRAMMABLE LOGIC DEVICE HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 20ns maximum propagation delay

1.5ke220cp

Contextual Info: r Ä = 7 7 # @ S G S - T H O M S O N [R íO D [^ C s [l[L [IO I[ r ¡ ^ 0 í D D © S 1 .5 K E 6 V 8 P ,A /4 4 0 P ,A 1 .5 K E 6 V 8 C P ,C A /4 4 0 C P ,C A TRANSIL TM FEATURES • PEAK PULSE POWER= 1500 W @ 1ms ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V

1.5KE400P

Contextual Info: SGS-THOMSON IM £ M iL i l ( g i r [ t l © S i . 5 k e 6 V 8 p , a / 4 4 o p , a 1 . 5 K E 6 V 8 C P , C A / 4 4 0 C P , C A TRANSIL FEATURES • PEAK PULSE POWEFU 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V. ■ UNI AND BIDIRECTIONAL TYPES.

Contextual Info: 1 . 5 k e 6 V 8 p,a/ 44 o p ,a !M g [EL[E(5M (QM © S 1 . 5 K E 6 V 8 CP,CA/ 440 C P ,C A S G S -T H O M S O N TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V. . UN! AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR.

16v8s

Abstract: 16V8AS
Contextual Info: SbE ]> • TTSTSB? SCS-THOMSON IIL iM M O Ê S □□'45151 bST ■ SGTH s 6 s HonsON G A L I 6V8A S “ T - H ê - f t - o 7 E2PR0M CMOS PROGRAMMABLE LOGIC DEVICE ■ HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 10ns maximum propagation delay

1.5KE47CP

Abstract: 1.5KE400P 1.5KE39P 1.5KE220CP 1.5KE440p 1.5KE36CP 1.5KE33CP 1.5KE68CP 1.5ke33p 1.5KE27P
Contextual Info: 1.5KE6V8P,A/440P,A 1.5KE6V8CP,CA/440CP,CA  TRANSILTM FEATURES PEAK PULSE POWER= 1500 W @ 1ms BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly

1.5KE68CP

Abstract: 1.5KE33cp 1.5KE39P 1.5KE36CP 1.5KE220CP 1.5KE15P 1.5KE400P 1.5KE15CP 1.5KE350CP 1.5KE100CP
Contextual Info: rZ 7 ^ 7 # SGS-THOMSON R L IG T T iM IC l 1 .5 K E 6 V 8 P ,A /4 4 0 P ,A 1 .5 K E 6 V 8 C P ,C A /4 4 0 C P ,C A T R A N S IL FEATURES • PEAK PULSE POWER= 1500W @ 1ms ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V ■ UNI AND BIDIRECTIONAL TYPES

P6KE160P

Abstract: P6KE6V8CP P6KE56CP P6KE400P P6KE75CP P6KE39CP P6KE27CP P6KE47P P6KE400CP P6KE12P
Contextual Info: P6KE6V8P,A/440P,A P6KE6V8CP,A/440CP,CA  TRANSIL FEATURES PEAK PULSE POWER= 600 W @ 1ms. BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR . UL RECOGNIZED. CB417

diode ba 204

Abstract: PFZ33A DTZ100A DTZ11 DTZ22 PFZ350 PFZ36A DTZ100 DTZ110 DTZ110A
Contextual Info: 5^017=12=^37 S G S-THOMSON : O T H O M S O N -C S F DIVISION SEMICONDUCTEURS • ■ - 59C 0267 3 7^ QD05b73 D T-7/'3-3 r d tIr v r 6V8/A i î n 'A " DTZ 440,A UNI - A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES D E PROTECTION U N I - E T BIDIRECTIONNELLES

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

ZFW MARKING

Abstract: 6V8A zdx 1000 marking zfw SM5Z200A ZFW MARKING CODE ZFG 28 zener zfw Zdw 31 ZFW 3-9
Contextual Info: SbE D • 7 T 2 T 23 7 □□mS'ì'ì TTD ■ S G T H S G S -T H O M S O N EL[i OT(s *S s 6 s-thomson t-im s t S M 5 Z 3 V 3 A -> 2 0 0 A ZENER DIODES N EW S E R IE ■ HIGH SURGE CAPABILITY UP TO : 180W@ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V S U R F A C E M O U N T T R A N S IL F E A T U R E S

Contextual Info: Gì. SGS-THOMSON SM15T6V8,A/220,A SM15T6V8C,CA/220C,CA \u TRANSILTM FEATURES . PEAK PULSE POWER= 1500 W @ 1ms • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR . FAST RESPONSE TIME ■ UL RECOGNIZED DESCRIPTION

p6kei3a

Abstract: P6KEI2A P6KE39CP 6v8p P6KE6V8CP 420 6V8A BZWQ4P273 P6KE7V5CP P6KE22CP 6V8C
Contextual Info: / T T SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^7 # *M ilU O T B @ lil g § PROTECTION TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Typo *RM @ VRM max V(BR * (V) •r V(CL) @ *pp max cq* max 1 ms expo Bidirec­ tional Unidirec­ tional (mA ) (V) min nom max 400 W / 1 ms expo.

P6KE400P

Abstract: P6KE400CP P6KE36CP P6KE6V8CP P6KE36P P6KE15CP P6KE160P P6KE43CP P6KE18CP P6KE440P
Contextual Info: SGS-THOMSON P6KE6V8P,A /440P,A P6KE6V8C P,A /440C P,C A l[Li ÌT[ÈÌ OT]D©i TR A N S IL FEATURES • PEAK PULSE POWER= 600 W @ 1ms . BREAKDOWN VOLTAGE RANGE : From 6V8 to 440 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. . FAST RESPONSE TIME:

332 6V8

Abstract: 237 6V8 BZW07-27 BZW06-154 bzw06 BZW06-342 BZW04-188 BZW04-188B BZW04-202 BZW04-202B
Contextual Info: f\ transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» t h o m s o n -c s f Recom m ended u tilis a tio n s Utilisations recommandées Types General purpose Usage général N e tw o rk p ro te ctio n Protection pour

B2W04

Abstract: BZW04-356B BZW04-356 BZW04-243B B2W04-342 BZW04-342 BZW04-188 BZW04-188B BZW04-202 BZW04-376B
Contextual Info: transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» f\ tho m so n -csf Recommended utilisations Utilisations recommandées Types General purpose Usage général Netw ork protection Protection pour réseau

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

PFZD 36

Abstract: BZW07-27 BZW07-27B BZW06-154 BZW06-342 P6KE TVS 33A BZW04-188 BZW04-188B BZW04-202B
Contextual Info: transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» f\ th o m s o n - csf Recommended utilisations Utilisations recommandées Types General purpose Usage général Netw ork protection Protection pour réseau

Contextual Info: 1500W Surface Mount Transient Voltage Suppressor 1.5SMCJ6.8A-1.5SMCJ250CA 1500W Surface Mount Transient Voltage Suppressor Features • • • • Low inductance, excellent clamping capability Repetition rate duty cycle : 0.05% Fast response time: typically less than 1.0ps from 0V to BV min.

Contextual Info: 1500W Surface Mount Transient Voltage Suppressor 1.5SMCJ6.8A-1.5SMCJ250CA 1500W Surface Mount Transient Voltage Suppressor Features • • • • Low inductance, excellent clamping capability Repetition rate duty cycle : 0.05% Fast response time: typically less than 1.0ps from 0V to BV min.

PL6V8Z

Abstract: zener 5v6 PL3V9Z 100Z 120Z CB-210 PL200Z PL33 PL24Z CCTU
Contextual Info: S G S^C S —THOMSON O TH O M S O N -^ 59C D | 7 ^ 2 3 ? □ □ □ 2 4 c17 D 02497 PL3V3Z - DIVISION SEMICONDUCTEURS PL200Z ZENER DIODES DIODES ZENER 1,3 W silicon Zener diodes, hermetically sealed plastic according to normalization CCTU : F 126 offering the following advantages :