2395 TRANSISTOR Search Results

2305 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2395 transistor

Contextual Info: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2395 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

transistor D 2395

Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

transistor D 2395

Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter.

MT 3205

Abstract: 908-185 DPS 185 clock chime circuit CF5762AB0 1786XT chime melody
Contextual Info: CF5762AB0 Analog Chime Clock CMOS IC OVERVIEW FEATURES • ■ ■ ■ ■ ■ ■ ina ry The CF5762AB0 is an analog chime clock CMOS IC that uses a 4.194304MHz crystal oscillator source. It can play a melody and hour chime when triggered by an hourly signal. It generates output sound using dual pitch

Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS Dlag. Number BV dss Vgs Off BVGSS •d rosi0 ») C |S S gfs Pd N-CHANNEL Enhancement Mode High Speed Switch T03 1f 100 Min 4 Max ±20 Max 33 0.08 Max 3000 Max 9 Min 150 Max N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL

motorola 2395

Abstract: Motorola 2396 BTA13LT1 transistor D 2395 TRANSISTOR D 2398
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BTA13LT1 M M B T A 1 4 L T 1* Darlington Amplifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit C o llecto r- Emitter Voltage

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

VK200-19

Abstract: motorola 2395 JMC5601 NPN/TE 2395 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts

transistor D 2395

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol

MRF8S23120HR3

Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

D44VH7

Abstract: d44vh10
Contextual Info: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are

Contextual Info: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: HARRIS SEflICOND SECTOR 5bE J> • 43G2271 DG40fil4 Û4S H H A S D44VH Series F ile Number 2350 7 = 3 6 - 7 .3 Silicon N-P-N Transistors Complementary to the D45VH Series Features: ■Fast Switching ts < 700 ns resistive tf < 200 ns ■Low l^c£ saf ^ 0 .4 V @ lc = 8/4

Contextual Info: Preliminary Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: MOT OROL A SC X S T RS /R F 15E 0 | b3t>7aS4 OGflblSQ S | M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage VcEO 25 Vdc Collector-Base Voltage VcBO 25 Vdc Collector Current — Continuous ic 600 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C

j142

Contextual Info: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J205

Abstract: SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524
Contextual Info: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

J476

Abstract: SL-45241 SL-45242 J473 j469 45241
Contextual Info: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

j377

Contextual Info: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

TE 2395 motorola

Abstract: motorola te 2395 motorola 2395 te 2395 NPN/TE 2395 motorola NPN low voltage
Contextual Info: MSD1328-RT1* CASE 318D-03, STYLE 1 M A X IM U M R A T IN G S TA = 2 5 C S ym bol Value U nit C o lle cto r-B a se V oltage v (B R )C B O 25 V dc C o lle cto r-E m itte r Voltage v lB R )C E O 20 Vdc E m itter-B ase V oltage v E lB R jB O 12 V dc 'C 500 m A dc

vno300m

Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English