23B3 Search Results

Contextual Info: 32E D • Û 23b350 OOlbbSä b « S I P PNP Silicon Darlington Transistors SIEMENS/ SPCL-, SEMICONDS • • • • BCP 28; BCP 48 T -3 3 - 3 1 _ For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type

Contextual Info: O K I Semiconductor 23B33-XXBS4/DS4 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B33-xxBS4/D S4 is a fully decoded 524,288-word x 32-bit CM OS Dynamic Random Access Memory Module com posed of four 4-Mb DRAM s in SOJ MSM514260 packages mounted with two 0.2 (J.F

RE52

Abstract: CCA-5 MAS 10 RCD MSM514260 FKS3
Contextual Info: O K I Semiconductor 23B33-xxBS4/DS4 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M SC 23B33-xxBS4/D S4 is a fully decoded 524,288-word x 32-bit CM OS Dynamic Random Access Memory Module composed of four 4-Mb DRAMs in SOJ MSM514260 packages mounted w ith two 0.2 |iF

Contextual Info: SONY CORP/COMPONENT PRODS 5DE &3&23B3 SONY . - a ? - 0 s~ 9, 8, Dual 4-bit Universal Shift Register Description The CXB1532Q-Y is an ultra high speed monolithic Universal Shift Register with variable bit length. Select inputs S I and S2 select a function mode

Contextual Info: 32E D • Ô 23b320 O O lb b Q i T H S I P Silicon Switching Diode Array _S I E M E N S / SMBD 7000 SPCL-, SEM ICO N DS _ T ~ -2 3 - g ? • For high-speed sw itching applications • Connected in series C2 ,A 1 Tÿpe M a rk in g O rd e rin g c o d e fo r

Contextual Info: O K I Semiconductor 23B33-XXBS4/DS4 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B33-xxBS4/D S4 is a fully decoded 524,288-w ord x 32-bit CM OS Dynam ic Random Access Memory Module com posed of four 4-M b DRAMs in SOJ M SM 514260 packages mounted with two 0.2

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

Contextual Info: HCS151MS S ttftlSSSl Radiation Hardened 8-Input Multiplexer S e p te m b e r 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)

2907A

Contextual Info: 3SE m D 23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance

Contextual Info: SONY CXP834P16 CXP834P17 CMOS 8-bit Single Chip Microcomputer Description The CXP834P16 and CXP834P17 are a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, 32kHz timer/counter, LCD controller/driver, remote

6CS3

Abstract: Infrared Receiver sensor HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633R 433 transmitter, pcb layout master guide st semiconductor ERN 1387
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

CEPO

Abstract: A723 b537 533B P7A1 W316
Contextual Info: 532,- 5645 ;:A2< 7/>05694 <27/B 3FCQROFP S v/B167<5 @3:/G S baam AE7B167<5 1/>/07:7BG S m11=@27<5 B= uqo gcaff^dbk*oe Zo=<B/1Bke_f9mln3/@/0:3 :=/2kba9m :=/2^1C@@3<B[ S mo^D=:B/53 2@7D7<5 7A 43/A70:3 S e9+ 273:31B@71 AB@3<5B6 Z03BE33< 1=7: /<2 1=<B/1BA[ S q<D7@=<;3<B/: 4@73<2:G >@=2C1B Z|=t} 1=;>:7/<B[

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

ISL9504

Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS

SOT23-5 AE31

Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

ST T4 D560

Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

Contextual Info: 123234567898ABCD426EEEEEEF426EEEEEE 123234567898ABCD426EEEEEEF426EEEEEEF 123456789AB8CDEF E 6  8B8 66 RoHS 1324F 111AA 12342562789AB9 B CCCDE2FE25FDF5 서식번호 : SSC- QP- 7- 07- 12 Rev.00 123234567898ABCD426EEEEEEF426EEEEEE

BF195

Abstract: BF197 CD639 BF196 BF198 BF199 BF224 BF237 BF238 BF240
Contextual Info: TO-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CF (V) Min 30 BF196 2C 40 BF197 5 3C 40 BF198 ^EBC Pd (V) (W) (A Min @Tc=25 °c 4 25 40 4 30 4 0.4 0.4 0.35 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn

Contextual Info: • For several eurocards • For one eurocard and bulky components Enclosures & Components Cassettes and Modules System Platforms Backplanes Enclosures & Components Cabinets Rotary Switches Local Service – global resources Switzerland USA Germany United Kingdom

Contextual Info: Rev: 102108 DS33M33 Demo Kit General Description The DS33M33 demo kit DK is an easy-to-use evaluation board for the DS33M33 and the DS33M33 Ethernet-over-SONET/SDH devices. The demo kit contains an option for either T3 or E3. The T3E3 links are complete with line interface, transformers, and