23K1 Search Results

23k101

Contextual Info: TECHNICAL DATA SHEET Mini-Coax 23K101-102H3 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Documents Assembly instruction 23 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body Clip Dielectric

RG179

Contextual Info: TECHNICAL DATA SHEET Mini-Coax STRAIGHT JACK FOR 75 Ω CABLE 23K171-102H3 All dimensions are in mm; tolerances according to ISO 2768 m-H Documents Assembly instruction 23 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact

Contextual Info: TECHNICAL DATA SHEET Mini-Coax STRAIGHT JACK MINI POWER 23K101-210L All dimensions are in mm; tolerances according to ISO 2768 m-H Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Connector body Clip Material Plating Brass AuroDur , gold plated

Contextual Info: TECHNICAL DATA SHEET Mini-Coax STRAIGHT JACK MINI POWER 23K101-210H All dimensions are in mm; tolerances according to ISO 2768 m-H Documents N/A Material and plating RF_35/12.04/3.0 Connector parts Connector body Clip Material Plating Brass Gold, min. 1.27 µm, over chemical nickel

Contextual Info: TECHNICAL DATA SHEET Mini-Coax 23K101-101H3 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Documents Assembly instruction 23 A Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body Clip Dielectric

Contextual Info: 2 ^ 4 2 5 5 S IL IC Q N N PN E P IT A X IA L P LA N A R T Y P E t r a n s is t o r TV T U N E R , U H F O SC IL LA T O R A P P L IC A T IO N S C O M M O N C O LL EC T O R U n it in mm + 0.5 2 5-0.3 • T ra n s itio n F re q u e n c y is H ig h and D e p en d en t on C u rre n t

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8853

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-815-XXF All dimensions are in mm; tolerances according to ISO 2768 c-H

schiele

Abstract: Luranyl 2402 L99-799-XXE rosenberger assembly mini 23S103-270L3 32S10 32S102-270L5 23Z121-007
Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-799-XXE Marking 1A 1B 2A

Contextual Info: TECHNICAL DATA SHEET CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXE All dimensions are in mm; tolerances according to ISO 2768 c-H RF_35/11.05/3.1 Available variants Type Channels A mm Insertion loss ≤ (dB) at 20 GHz Weight (g) / pce L99-816-15E

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

S8850A

Abstract: S8850 Microwave Semiconductor s88
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A TECHNICAL DATA FEATURES: • HIGH POWER P^cjB = 21.5dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 9 . ° dB at f = 15 GHz ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8836B

Contextual Info: TOSHIBA S8836B MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 29.5 dBm at f = 8 GHz • High gain - G1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

S8851

Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba control code
Contextual Info: TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8850A

Abstract: S8850 S-8850
Contextual Info: TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8850A Power GaAs FETs Chip Form Features • High power - pidB = 21.5 dBm a tf = 15 GHz • High gain - G-^g = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs Chip Form Features • High power - P idB = 28 dBm at f = 15 GHz • High gain - G 1dB = 7 d B at f = 1 5 G H z • Suitable for Ku-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - P idB = 24 dBm a t f = 15 GHz • High gain - G 1dB = 8 dB a t f = 1 5 G H z • Suitable for Ku-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

2SJ106

Contextual Info: SILICON P CHANNEL JUNCTION TYPE 2SJ106 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. + CL5 CONSTANT CURRENT APPLICATIONS. IMPEDANCE CONVERTER APPLICATIONS. . High Breakdown Voltage : Vg d S= 50V Min. . High Input Impedance