Untitled
Abstract: No abstract text available
Text: SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J326T ○ Power Management Switch Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V)
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SSM3J326T
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SSM3J321T
Abstract: No abstract text available
Text: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)
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SSM3J321T
to150
SSM3J321T
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SSM3K320T
Abstract: No abstract text available
Text: SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 0.4±0.1
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SSM3K320T
SSM3K320T
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SSM3K318T
Abstract: No abstract text available
Text: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)
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SSM3K318T
SSM3K318T
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SSM3K302T
Abstract: No abstract text available
Text: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)
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SSM3K302T
SSM3K302T
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Untitled
Abstract: No abstract text available
Text: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)
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SSM3J317T
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SSM3K316T
Abstract: No abstract text available
Text: SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications • • Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V)
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SSM3K316T
SSM3K316T
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SSM3J307T
Abstract: No abstract text available
Text: SSM3J307T 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅤ SSM3J307T ○ パワーマネージメントスイッチ ○ 高速スイッチング +0.2 2.8-0.3 1.5 V 駆動です オン抵抗が低い: Ron = 83 mΩ (最大) (@VGS = -1.5 V)
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SSM3J307T
SSM3J307T
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SSM3J02T
Abstract: No abstract text available
Text: SSM3J02T 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J02T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.5 Ω max (@VGS = −4 V)
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SSM3J02T
SSM3J02T
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SSM3J305T
Abstract: No abstract text available
Text: SSM3J305T 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J305T ○ DC-DC コンバータ ○ 高速スイッチング • 4V 駆動です • オン抵抗が低い 単位: mm : RDS ON = 477mΩ max (@VGS = −4 V) : RDS(ON) = 237mΩ max (@VGS = −10 V)
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SSM3J305T
SSM3J305T
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SSM3K303T
Abstract: No abstract text available
Text: SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm Ron = 120 mΩ max (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C)
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SSM3K303T
SSM3K303T
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SSM3K302T
Abstract: PD1700
Text: SSM3K302T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K302T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 131mΩ 最大 (@VGS = 1.8V)
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SSM3K302T
SSM3K302T
PD1700
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SSM3J314T
Abstract: No abstract text available
Text: SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T ○ High Speed Switching Applications Unit: mm • Low ON-resistance: Ron = 100mΩ max (@VGS = -4.0 V) 54mΩ (max) (@VGS = -10 V) Unit Drain-Source voltage VDSS -30 V Gate-Source voltage
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SSM3J314T
SSM3J314T
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SSM3K310T
Abstract: No abstract text available
Text: SSM3K310T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K310T ○ 高速スイッチング • 1.5V 駆動です • オン抵抗が低い : Ron = 66mΩ 最大 (@VGS = 1.5V) 単位: mm +0.2 2.8-0.3 : Ron = 43mΩ (最大) (@VGS = 1.8V)
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SSM3K310T
SSM3K310T
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2sc5703
Abstract: No abstract text available
Text: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
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2SC5703
2sc5703
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2SC6061
Abstract: No abstract text available
Text: 2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 1 3 2 Rating Unit VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage VCEO 120 V Emitter-base voltage
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2SC6061
2SC6061
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SSM3K01T
Abstract: No abstract text available
Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V
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SSM3K01T
SSM3K01T
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SSM3J13T
Abstract: transistor KDH
Text: SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM3J13T Power Management Switch High Speed Switching Applications • • • UNIT : mm Small Package Low on Resistance : Ron = 70 mΩ (max) (＠VGS = −4 V) : Ron = 95 mΩ (max) (＠VGS = −2.5 V)
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SSM3J13T
SSM3J13T
transistor KDH
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SSM3K302T
Abstract: No abstract text available
Text: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive • Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)
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SSM3K302T
SSM3K302T
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SSM3J306T
Abstract: MARKING JJ9
Text: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)
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SSM3J306T
SSM3J306T
MARKING JJ9
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SSM3J304T
Abstract: 16t marking
Text: SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 297 mΩ max (@VGS = -1.8 V) Ron = 168 mΩ (max) (@VGS = -2.5 V)
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SSM3J304T
SSM3J304T
16t marking
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SSM3J01T
Abstract: No abstract text available
Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)
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SSM3J01T
SSM3J01T
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SSM3J312T
Abstract: SSM3J312
Text: SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm Ron = 237mΩ max (@VGS = −1.8 V) Ron = 142mΩ (max) (@VGS = −2.5 V) Ron = 91mΩ (max) (@VGS = −4.0 V)
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SSM3J312T
SSM3J312T
SSM3J312
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Untitled
Abstract: No abstract text available
Text: SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit: mm • 1.8V drive • Low on-resistance : Ron = 47mΩ max (@VGS = 1.8V) : Ron = 35mΩ (max) (@VGS = 2.5V)
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SSM3K309T
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