24 VOLTS 100 AMPERES SMPS Search Results

32P05T

Contextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH96P085T

Abstract: ixtp96 IXTP96P085T 96P085T DS1000-25
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA96P085T IXTP96P085T IXTH96P085T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 85V - 96A Ω 13mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings

IXTA120P065T

Abstract: IXTH120P065T IXTH120 120P065T IXTP120P065T P-CHANNEL 25A TO-247 POWER MOSFET
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA120P065T IXTP120P065T IXTH120P065T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 65V - 120A Ω 10mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings

IXTA76P10T

Abstract: ixth76p10t 76P10T DIODE 76A IXTP76P10T
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA76P10T IXTP76P10T IXTH76P10T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 100V - 76A Ω 24mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings

140P05T

Abstract: IXTH140P05T IXTA140P05T IXTP140P05T P-CHANNEL 25A TO-247 POWER MOSFET
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA140P05T IXTP140P05T IXTH140P05T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 50V - 140A Ω 8mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTH140P05T

Abstract: IXTA140P05T IXTP140P05T P-CHANNEL 25A TO-247 POWER MOSFET PF6-40 123B16
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 = = ≤ RDS on - 50V - 140A Ω 9mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS

44P15T

Abstract: IXTP44P15T ixta44p15t IXTA44 IXTP44 TO-3P weight
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T P-Channel Enhancement Mode Avalanche Rated - 150V - 44A Ω 65mΩ TO-3P IXTQ S (TAB) G D S G (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C - 150

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGA16N60B2

Abstract: IXGP16N60B2
Contextual Info: HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 1.95V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES

Contextual Info: HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES

IXGA16N60B2

Abstract: IXGP16N60B2 16N60B
Contextual Info: HiPerFASTTM IGBTs B2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2 IXGP16N60B2 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES

IXGH24N60C4D1

Abstract: 24N60C4D1 G24N60
Contextual Info: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM

600TD

Contextual Info: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

24N60C4D1

Abstract: G24N60
Contextual Info: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM

IXGP48N60A3

Abstract: IXGH48N60a3 IXGH48N60 IXGA48N60A3
Contextual Info: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGP20N120B3

Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Contextual Info: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH12N120A3

Abstract: IXGH12N120 IXGP12N120A3 G12N120
Contextual Info: IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 GenX3TM 1200V IGBTs High Surge Current VCES = 1200V = 12A IC90 VCE sat ≤ 3.0V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC90 = 12A VCE sat ≤ 3.0V IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 AA (IXGA) G S D (Tab) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

ixf55n50

Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Contextual Info: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions

Contextual Info: Preliminary Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

48n60

Abstract: IXGH48N60 IXGH48N60A3 IXGA48N60A3 48N60A3 IXGP48N60A3 1660I C5036
Contextual Info: GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode IXYH75N65C3H1 VCES = IC110 = VCE sat  tfi(typ) = 650V 75A 2.3V 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES