24 VOLTS SMPS Search Results

Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410 and

AON6410

Abstract: soic8 footprint
Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410

AON7406

Contextual Info: AON7406 30V N-Channel MOSFET General Description Features The AON7406 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. VDS (V) = 30V ID = 33A

Contextual Info: AON6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6414 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

AON6414

Abstract: AON6414L AON6416 J3028 AON6416L 30V 20A smps
Contextual Info: AON6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6414/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6414 and

AO4480

Contextual Info: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

AO4480L

Abstract: AO4480 24 volts smps
Contextual Info: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480/L uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

AON7406

Contextual Info: AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7406 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product

AO4480

Contextual Info: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

Contextual Info: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.

Contextual Info: AO4406A 30V N-Channel MOSFET General Description Product Summary The AO4406A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)

AON7406

Contextual Info: AON7406 30V N-Channel MOSFET General Description Features The AON7406 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. VDS (V) = 30V ID = 11A

Contextual Info: AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose

Contextual Info: AO4406A 30V N-Channel MOSFET General Description Product Summary The AO4406A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V)

AO4406AL

Abstract: AO4406
Contextual Info: AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.

ao4476a

Contextual Info: AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose

AO4476AL

Abstract: 86 diode
Contextual Info: AO4476AL 30V N-Channel MOSFET General Description Product Summary The AO4476AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose

Contextual Info: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

Contextual Info: AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V

AON7400A

Abstract: DSAE00220
Contextual Info: AON7400A 30V N-Channel MOSFET General Description Product Summary The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose

Contextual Info: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and

Contextual Info: AON6520 30V N-Channel MOSFET General Description Product Summary The AON6520 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V)

Contextual Info: AON6520 30V N-Channel MOSFET General Description Product Summary The AON6520 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V

ao4712

Contextual Info: AO4712 30V N-Channel MOSFET 1234566576 General Description Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load