2450-10 TOKO Search Results

2450-10 toko

Abstract: TDF2A-2450T-10 2450-10 TOKO filter
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10 DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : : : 2450MHz Fo±50MHz

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10 DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : : : 2450MHz Fo±50MHz

TDF2A-2450T-10A

Abstract: 2450-10 toko 2450-10
Contextual Info: RoHS compliant SPECIFICATION OF DIELECTRIC FILTER Preliminary TOKO P/No: TDF2A-2450T-10A 1. OUTLINE DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :mm :±0.3 2. ELECTRICAL CHARACTERISTICS Center Frequency (Fo) Passband Width Input Output Impedance

2450-10 toko

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10A DIMENSION Marking 5.7 Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :inm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo 2450MHz Passband Width Fo±50MHz Input Output Impedance

2450 MHz low noise amplifier schematic

Abstract: C06CF Avantek mixer HP83620A Avantek mixer TFX Avantek tfx Rf Front-End TFX-722 GRM36X5R104K10 2.4GHz booster
Contextual Info: 3.3V Integrated RF Front-End for 2.4GHz ISM ITT2304GF PRELIMINARY FEATURES • • • • • • • • • Build a Bluetooth or HomeRF radio by connecting directly to popular single chip transceivers like the National LMX3162. 3.3V operation Single positive supply

RF Power Amplifier IC for 2.4 GHz ISM

Contextual Info: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V

Contextual Info: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz

pin configuration of ic 1496

Abstract: MAAPSS0093 the pin function of ic 7413 2450 MHz low noise amplifier schematic 96214 99108 M513 MA02303GJ MAAPSS0093SMB MAAPSS0093TR-3000
Contextual Info: RoHS Compliant RF Power Amplifier IC For 2.5 GHz ISM MAAPSS0093 V1 Features • • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Voltage Operation Power Added Efficiency As High As 55%

RF Power Amplifier IC for 2.4 GHz ISM

Abstract: TKS235CT-ND
Contextual Info: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ PRELIMINARY FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm

14 pin ic 4027

Abstract: 96214 99108 MA02303GJ 03168 IC 7449 09870
Contextual Info: MA02303GJ RF Power Amplifier IC For 2.4 GHz ISM FEATURES •= •= •= •= •= •= •= •= •= •= •= Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V

Contextual Info: RF Power Amplifier IC For 2.5 GHz ISM MA02303GJ V6 Features • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V

ITT2303GJ

Abstract: 99108 IC 7404 not gate
Contextual Info: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

MCH18

Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

not gate ic 7404

Contextual Info: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V4 MA02303GJ Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm

99108

Abstract: MA02303GJ MA02303GJ-R13 MA02303GJ-R7 MA02303GJ-SMB IC 7449 specifications of IC 7404 14 pin ic 4027 specifications of IC 7404 point to point
Contextual Info: RF Power Amplifier IC For 2.5 GHz ISM MA02303GJ V7 Features • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V

Contextual Info: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V5.1 MA02303GJ Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm

xa3b

Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

a3bz

Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

specifications of IC 7404 point to point

Abstract: FR4 dielectric constant at 2.4 Ghz
Contextual Info: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V1 MA02303GJ Functional Schematic Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency As High As 55 Percent

FR4 dielectric constant at 2.4 Ghz

Abstract: C11AH1R 14 pin ic 7404 not gate fr-4 dielectric constant 4.4 99108 specifications of IC 7404 point to point 96214 MA02303GJ MA02303GJ-R13 MA02303GJ-R7
Contextual Info: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features Functional Schematic • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm • Output Power 26.5 dBm @ 3.3 V

marking xt2 mmic

Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Contextual Info: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

Contextual Info: 0.5 W, 2.4 GHz Power Amplifier AM52-0024 V 1.2 Features n n n n n Functional Schematic Ideal for 802.11b ISM Applications Single Positive Supply Output Power 27.5 dBm 57% Typical Power Added Efficiency Downset MSOP-8 Package PIN 8 PIN 1 Description M/A-COM’s AM52-0024 is a 0.5 W, 2.4 GHz GaAs

GETEK

Abstract: ITT2301AF C11AH100 Dielectric Labs
Contextual Info: 3.6V 0.5W RF Power Amplifier IC for 2.4 GHz ISM ITT2301AF Features Applications § § § § • • • • • • • 2.4 GHz ISM Cordless Phones Cordless PBX Radio/Wireless Local Loop RLL/WLL V DD1 VDD2 N/C GND GND GND GND GND RFIN/VGG1 PRELIMINARY Single Positive Supply