245A TI Search Results

Contextual Info: TK36 M ITEL Phase Control Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4255 - 3.2 DS4255 - 3.3 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM _. 1200V 245A Jt AV 5500A TSM

Contextual Info: TK36 TK36 Phase Control Thyristor Advance Information Replaces January 2000 version, DS4255-4.0 DS4255-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 245A ITSM 5500A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives

TO93 package

Abstract: ON SEMICONDUCTOR 613 AN4839 TK36
Contextual Info: TK36 TK36 Phase Control Thyristor Advance Information Replaces January 2000 version, DS4255-4.0 DS4255-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 245A ITSM 5500A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives

Contextual Info: TK36 TK36 Phase Control Thyristor Advance Information Replaces July 2001 version, DS4255-5.0 DS4255-6.0 February 2004 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 245A ITSM 5500A dVdt* 200V/µs ■ DC Motor Control dI/dt 500A/µs ■ Welding

74FCT245A

Contextual Info: 245A EH ÆM National Semiconductor 74FCT245A Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245A contains eight non-inverting bidirectional buffers with TRI-STATE outputs and is Intended for bus-ori­ ented applications. The Transmit/Receive T/R input de­

Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFN260N17T = = 170V 245A Ω 6.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings

B511-2

Abstract: DM74ALS DM74ALS245A DM74ALS245AN DM74ALS245ASJ DM74ALS245AWM DM74ALS245MSA M20D MQA20
Contextual Info: 245A & National Semiconductor DM74ALS245A Octal TRI-STATE< Bus Transceiver General Description Features This advanced low power Schottky device contains 8 pairs of TRI-STATE logic elements configured as octal bus trans­ ceivers. These circuits are designed for use in memory, mi­

Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended for tw o-w ay asynchronous com m unication between data buses. It has high drive current outputs w hich enable high

74HC245AN

Abstract: M74HC245AN MM74HC245A
Contextual Info: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M I C O N D U C T O R TM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M OS technology, and is intended fo r tw o-w ay asynchronous com m unication between data

e2438

Abstract: TIS71
Contextual Info: TC74HCT245AP/AF/AFW TC74HCT640AP/AF TC74HCT643AP/AF/AFW O CTAL BUS B U FFE R TC74HCT245AP/AF/AFW TC74HCT640AP/AF TC74HCT643AP/AF/AFW 3-STATE, NON-INVERTING 3-STATE, INVERTING 3-STATE, INVERTING AND NON-INVERTING The TC 74H C T 245A , HCT640A an d HCT643A a re h igh

t245A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus Transceiver M C 74VHCT245A The M C 74V H C T 245A is an advanced high speed C M O S octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

Contextual Info: Si GE C P L E S S E Y OCTOBER 1995 SEMI CO NDUC TOR S DS4255-3.2 TK36 PHASE CONTROL THYRISTOR KEY PARAM ETERS V DRM _ 1200V 245A T AV 5500A 'TS M dVdt* 200V/HS dl/dt 500A/|is APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control.

TC74HC245AP

Contextual Info: TC74HC245AP/AF/AFW TC74HC640AP/AF TC74HC643AP/AF OCTAL BUS TRANSCEIVER TÇ74HÇ245AP/AF ?-§TATE, NON-INVERTING TC74HÇÎ4M -,_.6AP/AF 3-STATE. INVERTIN TC74H5643AP/AF 3-STATE. INVERTIN AND NON-INVERTING T h e T C 74H C 245A , 640A a n d 643A a re h ig h sp e e d CM O S

CL100 transistor

Abstract: transistor E 13009 1024x4 bit ram transistor cl100 if6 hall 13009 TRANSISTOR equivalent gm f131 13005 TRANSISTOR HALL EFFECT TRANSISTOR 17S IAIO 3Y
Contextual Info: MIL-M-38510/245A 28 January 1987 _ s u p e r s iin r MIL-H-38510/2455 USAF 5 April 1983 " m ilit a r y spec ific a t io n MICROCIRCUITS, DIGITAL. CMOS, 4096 BIT, STATIC RANDOM ACCESS MEHORY SRAM), BULK SILICON AND SILICON 0# SAPPHIRE This specification 1s approved f ° r use

Contextual Info: ^TC7 4HC245AP/AF/AFW TC74HC640AP/AF TC74HC643AP/AF O C T A L B U S T R A N S C E IV E R TC 74H C 245A P/AF 3 - S T A T E , N O N - IN V E R T IN G T C 74H C 640A P/AF 3 - S T A T E , IN V E R T IN G T C 74H C 643A P/AF 3 - S T A T E . IN V E R T IN G A N D N O N - IN V E R T IN G

lc 245a

Abstract: DIODE SMD 10 - 25L DIODE SMD 10 25L 7C245A 7c245
Contextual Info: CY7C245A •= CYPRESS • 5V ± 10% V c, commercial and military • I I I.-compatible I/O • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge F e a tu re s • Windowed for reprogrammability • CMOS for optimum speed/power

CY7C

Abstract: lc 245a Lh+245a
Contextual Info: CY7C245A CYPRESS I SEMICONDUCTOR • 5V ±10% V cc. commercial and military Features • Windowed for reprogrammablllty • TT L-com patible I/O • CMOS for optimum speed/power • High speed — IS ns max set-up — 10 ns clock to output • Low power • Direct replacement for bipolar

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

CY74FCT245DTQC

Abstract: CY74FCT245DTSOC
Contextual Info: fax id: 7033 ——— jÆ r~'fVI D1 DIT 17 QQ r COO CY54/74FCT245T 8-Bit Transceiver Features F unctional D escription • F u n c tio n , p in o u t, a n d d r iv e c o m p a tib le w ith FCT, a n d F lo g ic • FCT-D s p e e d at 3.8 n s m a x . C o m ’ l ,

Contextual Info: CY7C245A s CYPRESS SEMICONDUCTOR Reprogrammable 2048 x 8 Registered PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15 ns max set-up — 10 ns clock to output • Low power — 330 mW commercial for —35 ns

Contextual Info: Standard Terminal mm D im e n sio n s (mm) G 1 2V-1 OOAh T(treaded l ns«rt 8mm ST uD ! G e lle d e le c tro ly te b a tte ry O ' © >• : O. -o -f 1M2 D isc h argin g Current & D ischarge Duration Time P H Y S IC A L SP EC IFIC A T IO N Nominal Voltage

LVCHR162

Abstract: LVCHR162245
Contextual Info: 3.3V C M O S 16-B IT B I D I R E C T IO N A L T R A N S C E IV E R WITH 5 VOLT T O L E R A N T I/O IDT74LVCH1 6245A ^2245A IDT74LVC16245A ADVANCE INFORMATION FEATURES: DESCRIPTION: • C o m m o n feat ur es: These 16-bit transceivers are built using advanced dual

CY74FCT162245T

Abstract: CY74FCT16245T CY74FCT162H245T CY74FCT16445T FCT16245
Contextual Info: fax id: 7041 CY74FCT16245T/2245T CY74FCT16445T/2H245T 16-Bit Transceiver Features C Y74FCT162H245T Features: • Bus hold on d ata inputs • Low pow er, p in -c o m p a tib le re p la cem en t fo r A B T fu n ctio n s • E lim in ate s th e need fo r external pull-up or pull-do w n

SN74LVTH

Contextual Info: SN54LVTH245A, SN74LVTH245A 3.3-V ABT OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS _ SCBS130Q- MAY 1992 - REVISED MARCH 1998 State-of-the-Art Advanced BICMOS Technology ABT Design for 3.3-V Operation and Low Static Power Dissipation High-impedance State During Power Up