2493 TRANSISTOR Search Results

MAX2821

Abstract: MAX2820 MAX2820ETM MAX2820ETM-TD
Contextual Info: 19-2493; Rev 4; 4/04 2.4GHz 802.11b Zero-IF Transceivers Features The MAX2820/MAX2820A and MAX2821/MAX2821A single-chip zero-IF transceivers are designed for the 802.11b 11Mbps applications operating in the 2.4GHz to 2.5GHz ISM band. The transceivers are

MAX2821ETM TD

Abstract: TOKO VARIABLE INDUCTOR 2.4GHz RECEIVER IC MAX2820 MAX2820ETM MAX2820ETM-TD MAX2821 circuit diagram of 6 channel 2.4ghz rf receiver 2483MHz 2.4GHZ synthesizer
Contextual Info: 19-2493; Rev 5; 5/05 2.4GHz 802.11b Zero-IF Transceivers The MAX2820/MAX2820A and MAX2821/MAX2821A single-chip zero-IF transceivers are designed for the 802.11b 11Mbps applications operating in the 2.4GHz to 2.5GHz ISM band. The transceivers are nearly identical, except the MAX2821 and MAX2821A

2.4GHz rc radio circuit diagram

Abstract: 75Mhz 4 channel rc receiver ic MAX2821ETM TD 2.4GHz amplifier schematic circuit diagram for simple RF transmitter Motorola transceiver chip 100 MHz to 4GHz transistor 2.4GHz amplifier schematic MAX2242 MAX2820 MAX2820EGM-TD
Contextual Info: 19-2493; Rev 2; 11/03 2.4GHz 802.11b Zero-IF Transceivers The MAX2820/MAX2821 single-chip zero-IF transceivers are designed for the 802.11b 11Mbps applications operating in the 2.4GHz to 2.5GHz ISM band. The transceivers are nearly identical, except the MAX2821 provides a low-power shutdown mode and an analog

SERVICE-MITTEILUNGEN

Abstract: funkschau VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" ASZ1015 stassfurt luxomat scans-048 stroboskop Servicemitteilungen
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN r a d i o - television AUSGABE: 2/73 DATUM: Febr. 1973 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt 1. Einsatz des Transistors P 217 A aus SU-Import im "Color 20” Der VK-Endtransistor T3 ASZ 1015 wird durch den Typ P 217 A er­

D202B

Abstract: bux45
Contextual Info: T Power Transistors BUX45 HARRIS SEMICOND SECTOR - 5 3 - 1 File Number 27E D High-Voltage, High-Power Silicon N-P-N Power-Switching Transistors 43 0 2 S 7 1 0 0 2 G E b 0 3 ' O 1231 T HHAS TERMINAL DESIGNATIONS Features: • V e to - 5 00V ■ Ic -S A • P , - 120W

RCA9229D

Abstract: RCA9228D TA9229 RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C T0204AE
Contextual Info: HARRIS SEMICON] SECTOR SbE ]> m M3D2E71 DÜMD^IS bbT H H A S RCA9228A, RCA9228B, RCA9228C, RCA9228D File Number 1448 RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A Complementary High-Current, Medium-Voltage N-P-N and P-N-P Silicon Darlington Power Transistors

RCA9228D

Abstract: RCA9228A
Contextual Info: File Number RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 1448 50-A Complementary High-Current, Medium-Voltage N-P-N and P-N-P Silicon Darlington Power Transistors TERMINAL DESIGNATIONS Features: • 3 0 0 W a t 2 5 ° C ca s e te m p e ra tu re

MRF229

Abstract: MRF-229
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF229 The RF Line 1.5 W - 9 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt, mid-band large-signal am p lifie r app li­ cations in industrial and com m ercial F M equipm ent operating in the

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N -C hannel M O S F ield E ffect T ra n s is to r d e ­ in m illim e te rs sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.

Transistor D 2494

Abstract: fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F8 97 The RF Line N P N S ilic o n R F P o w e r T ra n s is to r Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating

Contextual Info: BUK7208-40B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

BUK7208-40B

Contextual Info: BUK7208-40B TrenchMOS standard level FET Rev. 02 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2412 is N -C h a n n e l MOS Field E ffect T ra n s is to r de­ sig n e d fo r high speed s w itc h in g a p p lic a tio n s . FEATURES •

BUK7208-40B

Contextual Info: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: H A R R HA-5102, HA-5104 HA-5112, HA-5114 IS S E M I C O N D U C T O R Low Noise, High Performance Operational Amplifiers April 1993 Features Description • Low • Wide Bandwidth 8MHz Compensated 60MHz (Uncompensated)

51125

Abstract: HA9P5112-9 has112 HA-5104 HA1-5114-2 HA6104 transistor 5104 db on 140 harris 5112 HA-5102 HAS104
Contextual Info: H A R R IS S E n iC O N D b l E SECTOR J> M 30SS71 S E M I C O N D U C T O R Low Noise, High Performance Operational Amplifiers April 1993 Features D escrip tio n Low NoIm . 4.3nV/VHz Low noise and high performance are key words describing HA-5102/04/

STR 6757 OF equivalent

Abstract: Johnson motor 2 607 022 013 Barber-Colman CP AT-1163 ms-517
Contextual Info: Electric/Electronic Products Catalog Make the most of your energy General Information TAC TAC is a Schneider Electric Company with a long tradition of global leadership in building controls technology. We offer the most extensive line of controls and components available to today's market, including: valve bodies, valve assemblies, actuation devices and sensors, as well as interfaces, and automated systems that link these products and other building systems

MC145034DW

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145031 MC145032 MC145033 MC145034 MC145035 Advance Information Encoders and Decoders CMOS For remote control devices, the MC145031/34 function as encoders and the MC145032/35 function as decoders. The MC145033 functions as both an encoder

Contextual Info: Si2493/57/34/15/04 Global ISOmodem-EVB Evaluation Board Rev 5.0 for the Si2493/57/34/15/04 ISOmodem with UART and SPI Interfaces Description The global Si2493/57/34/15/04-EVB evaluation board Rev 5.0 provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem . The

kc 5188

Abstract: 7805 Ka 2535 data sheet
Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.

BA 3914 C

Abstract: BA 3949 NC20 005 418 NTC THERMISTORS K 164 nb 358 d ntc 1,0 0334 NF08 kc 5323 BA 8219
Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.