24JULY Search Results

1N1742A

Contextual Info: MIL- S-19500/298 USAF AMENDMENT 3 24July ) 68 SUPERSEDÜJÔ AMENDMENT 2 13 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A This amendment forms a part oi Military Specif teat ion MIL-fe-Tgg&6/2B8 (USAF), toted 21 O ctSer 1964,~

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC - ALL RIGHTS RESERVED. B1 OR B2 A1 OR A2 D 12.63 23.97 9.15 4.20 2.40 11.25 C 2.50 1 REVISIONS DIST - P LTR DESCRIPTION A3 REV PER ECR-12-013085 24JULY2012 LW AC

Contextual Info: PROCESS CPS090 Silicon Controlled Rectifier 8 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 90 x 90 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 60 x 30 MILS Gate Bonding Pad Area 22 x 22 MILS Top Side Metalization

WM9713G

Abstract: SLPB526495 PXA320 gsm based digital notice board using LCD GPIO61 PXA3xx jtag WM9713 toradex pxa android mobile circuit Kokam SLPB-526495
Contextual Info: Limestone Datasheet Revision history Date Doc. Rev. Limestone PDA Baseboard Changes 05-June-09 Rev 1.0 V2.0 Creation of this document 08-June-09 Rev 1.1 V2.0 Minor clarifications 24-July-09 Rev 1.2 V2.0 Added connector references 27-July-09 Rev 1.3 V2.0 Minor clarifications

Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 20 LOC GP RESERVED. D I ST R E V 00 LTR I S I O N S DESCRIPTION DWN DATE RELEASED MJ UL Y 0 7 RG APVD PD P A R T N U M B E R C H A N G E S A N D OR D E S I G N C H A N G E S A E E E C T I N G

Contextual Info: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - 6 5 3.80 -X- FINISHED HOLE SIZE AND PLATED THRU HOLES TYP CONNECTOR OUTLINE 1.00 REVISIONS DIST - ALL RIGHTS RESERVED. 1 - P LTR SUGGESTED GROUND PAD OUTLINE BOTH SIDES OF BOARD

SCR SN 101

Abstract: bond wire copper SN 101 SCR to-126 transistor
Contextual Info: Package Details - TO-126 Mechanical Drawing DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.094 0.110 2.40 2.80 B 0.050 1.27 C 0.015 0.030 0.38 0.75 D 0.291 0.335 7.40 8.50 E 0.148 3.75 F 0.118 0.134 3.00 3.40 G 0.413 0.472 10.50 12.00 H 0.618 15.70

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - SUGGESTED GROUND PAD OUTLINE COMPONENT SIDE ONLY FINISHED HOLE SIZE AND PLATED THRU HOLES TYP - P LTR 2.50 TYP 5 3.80 REVISIONS DIST - ALL RIGHTS RESERVED. 1 CONNECTOR

7 segment LED display project

Abstract: Monitor-51 ezusb Monitor-51 hardware "EZ-USB"
Contextual Info: Application Note Programming the Cypress EZ-USB Board APNT_162 OVERVIEW This Application Note shows you how to: • Connect the Cypress EZ-USB Development Board to the PC and start the Keil Monitor-51. • Verify that the Cypress EZ-USB Development Board works and download a sample

Contextual Info: CMDSH-3 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a silicon Schottky diode, manufactured in a SUPERmini surface mount package, designed for fast switching applications requiring a low forward voltage drop.

CMDSH-3

Abstract: SOD-323 marking R8 schottky diode 100A marking code R8 SOD-323 S1 DIODE schottky S1 SOD-323 S1 MARKING schottky diode "MARKING CODE S1"
Contextual Info: CMDSH-3 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a silicon Schottky diode, manufactured in a SUPERmini surface mount package, designed for fast switching applications requiring a low forward voltage drop.

Contextual Info: 2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

NANDA9R3N0

Abstract: NANDA9R4N4 nanda8r3
Contextual Info: NANDxxRxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features • FBGA MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 2x2-Gbit (x8/x16) large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or

NANDA9R3N

Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
Contextual Info: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or

lnb downconverter schematic diagram

Abstract: RG6 coaxial cable parabolic antenna BFP540 MTA-100 RG6 coaxial J1 3007-1 parabolic dish circuit diagram BGA430 BGB540
Contextual Info: Applications Note No. 074 Silicon Discretes A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs • Gain = 32 – 37 dB from 950 – 2150 MHz positive gain slope • Low Power Consumption: 40mA at +5.0 Volts

CMXZ30VTO

Abstract: CMXZ47VTO CMXZ2V7TO CMXZ13VTO CMXZ20VTO CMXZ7V5TO CMXZ4V3TO CMXZ8V2TO CMXZ11VTO CMXZ6V2TO
Contextual Info: Central CMXZ2V4TO THRU CMXZ47VTO TM Semiconductor Corp. SURFACE MOUNT, TRIPLE, ISOLATED, OPPOSING SILICON ZENER DIODES 2.4 VOLTS THRU 47 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXZ2V4TO Series consists of three 3 Isolated Silicon Zener Diodes arranged in an alternating

Contextual Info: CHD8-06 SURFACE MOUNT SILICON HYPERFAST POWER RECTIFIER 8.0 AMP, 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CHD8-06 is a high voltage silicon HyperFast power rectifier designed for extremely fast switching applications.

mosfet vgs 5v

Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
Contextual Info: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed

SMD W07

Abstract: T1D-KS1T1B2 w07 smd 19-213/T1D-KS1T1B2/3T
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.6mm Height 19-213/T1D-KS1T1B2/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow

PDCR 900 pressure

Abstract: DMA 3 YEER DATE SHEET PDCR 900 P60U 451H P71C TLCS-90 TMP91C016 PDCR 800 pressure 5630 LED
Contextual Info: Data Book 16bit Micro controller TLCS-900/L1 series TMP91C016 REV2.2 September. 5, 2001 contents Table of Contents TLCS-900/L1 Devices TMP91C016 1. OUTLINE AND DEVICE CHARACTERISTICS TMP91C016-1 2. PIN ASSIGNMENT AND PIN FUNCTIONS TMP91C016-4 3. OPERATION

VN85

Abstract: CKV 2310 vn106 Himax gamma lcd tv VP200 vp77 VP-252 Source Driver Himax HIMAX TCON HX8223-A-DS
Contextual Info: DOC No. HX8223-A-DS HX8223-A 720CH TFT LCD Source Driver with Built-in TCON Preliminary version 02 July, 2005 HX8223-A 720CH TFT LCD Source Driver with Built-in TCON Preliminary Version 02 July, 2005 1. General Description HX8223-A is a 720-channel output source driver with built-in TCON (Timing

Contextual Info: Central CPR4-020 CPR4-040 CPR4-060 GLASS PASSIVATED GENERAL PURPOSE RECTIFIER 3.0 AMP, 200 THRU 600 VOLTS GPR-4AM CASE Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CPR4 Series are silicon rectifiers manufactured in a hermetically sealed, glass passivated package designed for use