24MAR2003 Search Results

TR 609

Abstract: Able
Contextual Info: TH I S DRAWING IS COPYRIGHT UNPUBLISHED. 2000 RELEASED BY TYCO ELECTRONICS FOR C O R P O R A T I ON . A L L PUBLICATION RI<5HTS 2000 LOC RESERVED. REV I S I O N S D I ST Al LTR A1 DESCRIPTION DATE PART NUMBERS CHANGED TO TYCO DWN ACK 24MAR2003 ARVD G.F.

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. w COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AF 50 R E V IS IO N S LTR DESCRIPTION D 1. S P E C IF IC A T IO N S : M A G N E T W IR E # 1 8 ~ # 3 4 . 0 4 0 " C 1 , 0 2 M M - > 0 0 G " C 0 .1 G M M > D I A ,

Contextual Info: Product Brief Integrated Circuit Systems, Inc. M2006-04 VCSO BASED FREQUENCY TRANSLATOR GENERAL DESCRIPTION PIN ASSIGNMENT 9 x 9 mm SMT 27 26 25 24 23 22 21 20 19 nDIF_REF1 GND REF_CLK DIF_REF0 nDIF_REF0 REF_SEL1 S_LOAD S_DATA VCC The M2006-04 is a VCSO (Voltage Controlled SAW

M250

Abstract: SD57060 SD57060-01 0821 ST
Contextual Info: SD57060-01 RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

Contextual Info: SD57060 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed

Contextual Info: Product Brief Integrated Circuit Systems, Inc. VCSO BASED FREQUENCY TRANSLATOR GENERAL DESCRIPTION PIN ASSIGNMENT 9 x 9 mm SMT 27 26 25 24 23 22 21 20 19 nDIF_REF1 GND REF_CLK DIF_REF0 nDIF_REF0 REF_SEL1 S_LOAD S_DATA VCC The M2006-11 is a VCSO (Voltage Controlled SAW

M250

Abstract: SD57060 SD57060-01
Contextual Info: SD57060-01 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M250

ST 9406

Contextual Info: STX790A Medium current, high performance, low voltage PNP transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ) s t( c u d Applications

JESD97

Abstract: STX790A STX790A-AP X790A
Contextual Info: STX790A Medium Current, High Performance, Low Voltage PNP Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 3A continuous collector current ■ 40V breakdown voltage V(BR CER) ■ In compliance with the 2002/93/EC European

Contextual Info: SD57120 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120W with 13dB gain @ 960MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european

Contextual Info: SD57060-01 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M250

M243

Abstract: SD57060 1030F
Contextual Info: SD57060 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed

transistor st z7

Abstract: 200B 20AWG 700B M252 SD57120
Contextual Info: SD57120 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120W with 13dB gain @ 960MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european

pa 66 gf

Abstract: M36W832BE M36W832TE
Contextual Info: M36W832TE M36W832BE 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V ■ – VPPF = 12V for Fast Program (optional)

Contextual Info: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive

945 TRANSISTOR

Abstract: 700B M243 SD57030
Contextual Info: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive

Contextual Info: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

Contextual Info: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

ST 9406

Abstract: st mar 705 to-92a X790A transistor ST 548 STX790A STX790A-AP STX790AG-AP
Contextual Info: STX790A Medium current, high performance, low voltage PNP transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER Applications ■ Power management in portable equipment

X790A

Abstract: JESD97 STX790A STX790A-AP
Contextual Info: STX790A Medium current, high performance, low voltage PNP transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER Applications ■ Power management in portable equipment