24A 8P Search Results
24A 8P Price and Stock
Vishay Intertechnologies PLZ24A-HG3_A/HZener Diodes ZENER DIODE MicroSMF DO219AC |
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PLZ24A-HG3_A/H | 3,790 |
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Renesas Electronics Corporation PS9124-F3-AXHigh Speed Optocouplers HI-SPEED OPTOCPLR SO-5 |
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PS9124-F3-AX | 1,257 |
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Analog Devices Inc LT1124AIS8#PBFPrecision Amplifiers 2x L N, Hi Speed Prec Op Amps |
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LT1124AIS8#PBF | 388 |
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Analog Devices Inc LT1124ACN8#PBFPrecision Amplifiers 2x L N, Hi Speed Prec Op Amps |
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LT1124ACN8#PBF | 158 |
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Analog Devices Inc LT1124AMPS8#PBFPrecision Amplifiers 2x L N, Hi Speed Prec Op Amps |
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LT1124AMPS8#PBF | 120 |
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24A 8P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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24a05
Abstract: 24A100 24A15 24a50 24a050
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5A/14A/24A 25-1000nS. 25VDC 5A/14A/24A-025 5A/14A/24A-050 5A/14A/24A-075 5A/14A/24A-100 5A/14A/24A-150 5A/14A/24A-200 5A/14A/24A-250 24a05 24A100 24A15 24a50 24a050 | |
24a50
Abstract: 24A15 15a transistor 24A05 24a050
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5A/14A/24A 25-1000nS. 25VDC 5A/14A/24A-025 5A/14A/24A-050 5A/14A/24A-075 5A/14A/24A-100 5A/14A/24A-150 5A/14A/24A-200 5A/14A/24A-250 24a50 24A15 15a transistor 24A05 24a050 | |
remocon mcu
Abstract: S524A40X10 S524A FM24653 ISO-14001 11-S5-24A S524AE0 EEPROM 4KBIT 1MHZ 8TSSOP samsung master replacement guide
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11-S5-24A Series-072001 S524A S524A40X10/40X20/40X40 S524A40X11/40X21/40X41/60X81/60X51 S524AB0X91/B0XB1 S524AD0XD1/D0XF1 S524AE0XH1 remocon mcu S524A40X10 FM24653 ISO-14001 S524AE0 EEPROM 4KBIT 1MHZ 8TSSOP samsung master replacement guide | |
Contextual Info: GaAs Infrared Emitting Diodes VTE1013H TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher |
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VTE1013H VTE1013 | |
VTE1013H
Abstract: VTE1013
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VTE1013H VTE1013 VTE1013H VTE1013 | |
Contextual Info: 24A M ic r o c h ip 1KI2K A 1.8V CMOS Serial EEPROMs 0 1 /0 2 FEATURES DESCRIPTION • Single supply with operation down to 1,8V • Low power CMOS technology — 1m A active current typical — 10 iA standby current typical at 5.5V — 3 nA standby current typical at 1.8V |
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24AA01 24AA01T 24AA02 24AA02T DS21052C-page bl03501 | |
PLCDA03
Abstract: PLCDA03C-6 PLCDA05C-6 PLCDA08C-6 PLCDA12C-6 PLCDA15C-6 PLCDA24
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PLCDA03C-6 PLCDA24C-6 EN61000-4) 5/50ns PLCDA03 PLCDA03C-6 PLCDA05C-6 PLCDA08C-6 PLCDA12C-6 PLCDA15C-6 PLCDA24 | |
Raychem triax cable
Abstract: M27500-22TE2TI4 7O20A5518 m27500
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TRC-50-2/TRC-75-2 TWC-78-2/TWC- TAI-189 TAI-102 9530A5117 TAI-I89 5021M533I 7O20A5518 Raychem triax cable M27500-22TE2TI4 m27500 | |
Contextual Info: t.lQ3Pül 0021010 fiöT M ic r o c h ip • 24A A 00/24L C 00/24C 00 128 Bit I2C Bus Serial EEPROM DEVICE SELECTION TABLE Device PACKAGETYPES Vcc Range Temp Range 24AA00 1.8 - 6.0 C,l 24LC00 2 .5 -6 .0 C,l 24C00 4 .5 -5 .5 C,I,E 8-PIN PDIP/SOIC NCC 1 |
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00/24L 00/24C 24AA00 24LC00 24C00 100kHz 400kHz DS21178A-page | |
LY 2117
Abstract: 20/LY 2117
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Contextual Info: SSP7434N 27 A, 30 V, RDS ON 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure |
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SSP7434N 18-Aug-2013 | |
a2724
Abstract: 27BSC SOP-8PP
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SSP7434N 27-Jul-2010 a2724 27BSC SOP-8PP | |
SSP7432N
Abstract: MosFET
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SSP7432N 18-Sep-2013 SSP7432N MosFET | |
a2724
Abstract: 27BSC
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SSP7432N 27-Jul-2010 a2724 27BSC | |
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seasonic
Abstract: ATX12V pfc forward ss-350es ATX12v 2.4 12.5W 324W power supply ATX12v SS-400ES SS-600ES
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-ATX12V ATX12V SS-600ES SS-500ES SS-400ES 24/20P) ATX12V 500/580W) seasonic pfc forward ss-350es ATX12v 2.4 12.5W 324W power supply ATX12v | |
pcb connectors
Abstract: stacked so-dimm connectors 22 pin sata female Connector 74221 72860 twisted pair Shrouded Header, 8 Pin, 2mm fci JEDEC MO 224 single row header 2.0mm pitch 10mm height DDR right angle 240 connector edge connector 22 pin
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300mm 8638PSC3005LF 8638PSS4005LF CDC-UTCAAPP-05/07-E pcb connectors stacked so-dimm connectors 22 pin sata female Connector 74221 72860 twisted pair Shrouded Header, 8 Pin, 2mm fci JEDEC MO 224 single row header 2.0mm pitch 10mm height DDR right angle 240 connector edge connector 22 pin | |
30460
Abstract: MK10 30460+bosch
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MK10/2 MK10/3 MK10/4 MK10/5 MK10/6 MK10/7 MK10/8 MK10/9 MK10/10 10-poles 30460 MK10 30460+bosch | |
EN230A
Abstract: frl 264 relay 3-phase monitor f3usn FN1-20A IEC 68-2-14 AC12 SUS304 T1000 T600
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Contextual Info: SLVU2.8-4 EPD TVS Diode Array For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE), |
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Contextual Info: SLVU2.8-8 Diode Array EPD TVS™ For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE), |
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Contextual Info: SLVU2.8-8 Diode Array EPD TVS™ For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE), |
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Contextual Info: SLVU2.8-4 EPD TVS Diode Array For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE), |
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torque of screw for pcb
Abstract: m4 Screw Terminal pcb m4 Screw Terminal
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10-positions 120kg 160kg 10-positions: 210kg 15kg/cm 10-positions) torque of screw for pcb m4 Screw Terminal pcb m4 Screw Terminal | |
0224aContextual Info: M 2 ic r o c h ip ^ IK 1.8V I2C TM FEATURES • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 juA standby current typical at 5.5V - 3 |^A standby current typical at 1.8V • Organized as a single block of 128 bytes 128 x 8 |
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DS21052G-page 0224a |