25 AMPERE SILICON POWER DIODES Search Results

RUTTONSHA all diodes

Abstract: HMR120 RUTTONSHA RUTTONSHA 40 hm RUTTONSHA 40 hm 160 RUTTONSHA 25 hmr 40 70 HM ruttonsha 40 hmr 120 40 hmr 160 RUTTONSHA 25 hmr
Contextual Info: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 25/40 Ampere Silicon Power Diodes FEATURES Y All diffused series. Y Available in normal & reverse polarity. Y Device conforms to IS 3700 III & IS 4400 (III). Y Device outline conforms to IS 5000 (Do. 5).

Contextual Info: S O L I D S T A T E IN C 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SILICON RECTIFIERS 40 Ampere Silicon Power Diodes FEATURES ❖ ❖ ❖ ❖ DO-5 All Diffused Series Available in Normal & Reverse Polarity Industrial Grade Available In Avalanche Characteristic

MEXICO LF 2A 250V 313 FUSE

Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
Contextual Info: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and

international rectifier GTO

Abstract: SCR 700v 30a LA50-P L15S1000 SCR 1000V 1000A LA055URD33TTI2250 LA100P DC Fuse 1000V 800A LA70QS80-22F LA60Q15-2
Contextual Info: Special Purpose Fuses Semiconductor Fuses 150 – 1300 VAC • Very Fast Acting • 1 – 6000 Amperes Semiconductor Fuses Littelfuse Semiconductor fuses are very fast acting fuses designed specifically for the protection of diodes, thyristors, triacs, and other

1N4150

Abstract: 25 Ampere Silicon Power Diodes 1N4148M 1n914a-1
Contextual Info: HITANO ENTERPRISE CORP. 1N914 THRU 1N4148~1N4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING VOLTAGE RANGE -50 to 100 Volts DIODES CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low power loss, high efficiency * Low leakage

1N4148 DO-34

Abstract: 100HZ 100MHZ 1N4148
Contextual Info: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF DO-34 GLASS 1.143 (29.03)

Contextual Info: FMKA140 FAIRCHILD s e m i c o n d u c t o r Tm DISCREi ECPH°NW0EL ^ E DSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

CNY47A

Abstract: CNY47 CNY47/47A
Contextual Info: European “Pro Electron’VRegistered Types _ CNY47, CNY47A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he CNY47 and CNY47A are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a

Contextual Info: PA.RCH.LD s e m ic o n d u c t o r Tm MBRS320 SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

1bl3

Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

Contextual Info: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features DO-34 GLASS Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF 0.079(2.0)

MBRS340

Contextual Info: MBRS340 FAIRCHILD M IC D N D U C T Q R n SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

diode 1bl3

Abstract: 1BL3 on 1bl3 G3060 Mark 1BL3 MBRS130L
Contextual Info: MBRS130L FAIRCH.LD MICDNDUCTQR T m DISCR^CPH ro“ SIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

Contextual Info: ÎV /ÎD D C 1 4 A SE M IC O N D U C T O R DISCRETE POWER AND SIGNAL t e c h n o l o g ie s M d KM 4U FA IR C H IL D SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

UNION CARBIDE

Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS Crss = 0.75pF 1 ID100 ID101 TO-78 TOP VIEW

A140

Abstract: FMKA140
Contextual Info: FMKA140 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

B140

Abstract: MBRS140
Contextual Info: MBRS140 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

CNY32

Abstract: 5300V
Contextual Info: G E SOLID STATE 01 DE I 3S7S0fll 00nfl3fc. 1 I Optoelectronic Specifications - S 3 Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State CNY32 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a low-cost plastic

FAIRCHILD MBRS340

Abstract: MBRS340 diode b34 Mark B34
Contextual Info: MBRS340 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

BAV19

Abstract: High Speed Switching Diodes
Contextual Info: HITANO ENTERPRISE CORP. BAV19 THRU BAV21 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE - 100 to 200 Volts CURRENT - 0.2 Ampere FEATURES * * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage Low forward voltage

id100

Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS

Contextual Info: FMKA140 FAIRCHILD S E M IC O N D U C T O R tm DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

Contextual Info: FAIRCHILD S E M IC O N D U C T O R tm MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

MBRS340

Contextual Info: FAIRCHILD S E M I C O N D U C T O R tm MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.