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    25 FM 160 DIODE Search Results

    25 FM 160 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    25 FM 160 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ST7-10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25’


    Original     		ST7-10 Current160 Voltage100 Current40m PDF

    Contextual Info: TOSHIBA 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 160 Unit in mm AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		50MHz --50MHz PDF

    Contextual Info: 376E Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage250 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25


    Original     		Current160 Voltage250 Current50m PDF

    Contextual Info: 376B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage100 Current50m PDF

    Contextual Info: 160F20 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0k V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		160F20 Current160 Voltage200 Current40m PDF

    Contextual Info: 376F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage300 Current50m PDF

    Contextual Info: 376K Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage500 Current50m PDF

    Contextual Info: 376G Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage350 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25


    Original     		Current160 Voltage350 Current50m PDF

    Contextual Info: 376H Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage400 Current50m PDF

    Contextual Info: P1206 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.160 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25#


    Original     		P1206 PDF

    Contextual Info: 376A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage50 Current50m PDF

    Contextual Info: 376D Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage200 Current50m PDF

    Contextual Info: 376C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#


    Original     		Current160 Voltage150 Current50m PDF

    G3006

    Contextual Info: G3006 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.160 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25#


    Original     		G3006 Voltage300 PDF

    1SV160

    Abstract: V160
    Contextual Info: TOSHIBA 1SV 160 1 SV160 TOSHIBA VARIABLE CAPACITANCE DIODE AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance SILICON EPITAXIAL PLANAR TYPE Unit in mm : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		1SV160 SC-59 50MHz 1SV160 V160 PDF

    1SV160

    Contextual Info: TO SH IBA 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		1SV160 SC-59 1SV160 PDF

    1SV160

    Contextual Info: 1SV 160 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 Unit in mm : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		1SV160 SC-59 50MHz 1SV160 PDF

    Contextual Info: T O SH IB A 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 Unit in mm AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING 15 VR 125 TJ -5 5 -1 2 5


    OCR Scan     		50MHz PDF

    Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1028 1614 12x103 0.894 0.487 Rectifier Diode V A A A V mΩ 5SDD 08D5000 Doc. No. 5SYA1165-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter


    Original     		08D5000 5SYA1165-00 CH-5600 PDF

    diode 3106

    Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter


    Original     		20F5000 5SYA1162-01 CH-5600 diode 3106 PDF

    Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 Rectifier Diode V A A A V mΩ 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter


    Original     		11D2800 5SYA1166-00 CH-5600 PDF

    Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1


    Original     		48H3200 5SYA1182-00 CH-5600 PDF

    209CmQ150

    Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
    Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78


    Original     		10BQ100 10BQ015 10BQ040 10BQ060 30BQ100 30BQ015 30BQ040 30BQ060 209CmQ150 K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015 PDF

    ABB VS 4000

    Abstract: 5sya2020
    Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1


    Original     		38H5000 5SYA1177-00 CH-5600 ABB VS 4000 5sya2020 PDF