25 SOT 23 Search Results

IPC-600E

Abstract: TRANSISTOR SUBSTITUTION
Contextual Info: P/N 1110748 Surface Mount-to-DIP JEDEC SOT-25, SOT-23A-6 Adapter FEATURES • Allows for breadboarding or substitution of Microgate SOT-23A-6 and SOT-25 IC and transistor packages into 0.100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder devices directly to topside of

transistor c 5586

Abstract: TSC 7211 marking 651 sot26 TS9004 transistor 15478 A 68067 8467 transistor
Contextual Info: TS9004 300 mA CMOS LDO Adjustable Output Voltages SOT-25 SOT-26 General Description The TS9004 family of positive, linear regulators feature low ground current 35µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 and SOT-25

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SOT-23 SWITCHING DIODES FEATURES Power Dissipation PD : 225 mW（Tamb=25℃） MARKING: 5D Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42LT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation PCM : 0.35 W (Tamb=25℃) 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET（ N-Channel ） SOT—23 1. GATE 2. SOURCE FEATURES 3. DRAIN ELECTRICAL CHARACTERISTICS（Tamb=25℃ Test 1.0 Power dissipation PD : 0.35W （Tamb=25℃）

PCF5020

Abstract: LCC 16 Pin Package pnp sot 23
Contextual Info: SURFACE MOUNT CATALOGUE INDEX Device Type Family Type Package Type Pg # Device Type Family Type Package Type Pg # BC807-16 BC807-25 BC807-40 BC808-16 General Purpose PNP General Purpose PNP General Purpose PNP General Purpose PNP SOT-23 SOT-23 SOT-23 SOT-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR PNP FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol

MMBT3904 SEMTECH

Abstract: NPN transistor Ic 50A td tr ts tf MMBT3904 MMBT3906
Contextual Info: MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

AV1015LT1

Contextual Info: @vic AV1015LT1 SOT-23 Plastic-Encapsulate Transistors AV1015LT1 TRANSISTOR（ PNP SOT—23 ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ FEATURE Power dissipation PCM : 150mW（Tamb=25℃）

MMBT4401

Abstract: MMBT4403
Contextual Info: MMBT4401 NPN Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4403 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

tsop 338

Contextual Info: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252

AT-255

Abstract: AT-255TR M513 SOT-25 rf 10ghz variable attenuator AT255
Contextual Info: AT-255 3Volt Voltage Variable Attenuator 25 dB, DC - 2.5 GHz Features • • • • • SOT-25 Single Voltage Control 0 to -3 Volts 25 dB Attenuation Range at 0.9 GHz Low DC Power Consumption Low Cost SOT-25 Plastic Package Tape and Reel Packaging Available

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES Power Dissipation PD : 200 mW（Tamb=25℃） BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25

Contextual Info: 3 Volt Voltage Variable Attenuator, 25 dB, DC - 2.5 GHz AT-255 V 5.00 Features n n n n n SOT-25 Single Voltage Control 0 to -3 Volts 25 dB Attenuation Range at 0.9 GHz Low DC Power Consumption Low Cost SOT-25 Plastic Package Tape and Reel Packaging Available

marking e1 diode

Abstract: marking d6 DIODE marking A2 Diode d4 marking 5h marking E1 MMBD4148A MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SWITCHING DIODE SOT—23 FEATURES MMBD4148A Marking:5H MMBD4148CA Marking:D6 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR NPN SOT–23 FEATURES  Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER

copper bonding wire

Contextual Info: PCN #: 113 Notification Date: 25 May 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Extent of Change:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3437 TRANSISTOR NPN SOT–23 FEATURES  High Transition Frequency  Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES  Low Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR NPN SOT–23 FEATURES  High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter