2507B Search Results

Contextual Info: L0,>:F6BC2<0 >@ED03F070CF-4 L0 >@ED0+B2>C:6>D0'B?D64D65 L0C0062B0.2BB2>DI L0:890 E2<:DI06C:8> L0'62;0'?G6B02@23:<:DI  <0%5/)70)+1)276020F440-&#39;%7-326 24D?BI0ED?=2D:?> 1.*0*6B:6C +6CD020$62CEB6=6>D *:>8<60&ED@ED0#?G0?CD6 .?B<5G:560,C6 #:89D0 >5ECDB:2<

1NA111BP

Abstract: RG511 SOL16 package 2507 D02SD70 2N4117
Contextual Info: B U R R -B R O W N INA111 i High Speed FET-lnput INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • FET INPUT: lB= 20pA max • HIGH SPEED: Ts = 4}is (G = 100, 0.01% • LOW OFFSET VOLTAGE: 500|iV max The IN A 111 is a high speed, FET-input instrumenta­

Contextual Info: L0$?G0?CD L04D:F60 ?G6B024D?B0?BB64D:?> L0!>@ED0+B2>C:6>D0(B?D64D650!BAAA7E L0>4<?C65 ';0#4-'60' /'065020F22.+%#6+105 24D?BI0ED?=2D:?> *.*DAA2AA0*6B:6C +6CD020%62CEB6=6>D *:>8<60'ED@ED0 6>6B2<0(EB@?C60(?G6B0*E@@<:6C ED?=2D650*6BF:46 (B?46CC0?>DB?<60&7%249:>:>86

Contextual Info: L 0062B0.2BB2>DI L ?G6B024D?B0?BB64D65 L @@B?F650D?0-BC0B0%249:>6BI0:B64D:F6 L ,>:F6BC2<0!>@ED030D-4 *=0&60*80!*,2*387020551.(&8.437 24D?BI0ED?=2D:?> ".*0*6B:6C +6CD020%62CEB6=6>D *:>8<60'ED@ED !>5ECDB:2<0(?G6B0*E@@<:6C (B?46CC0?>DB?<70&8%249:>:>87

Contextual Info: L0$:76D:=60.2BB2>DI L0,$FA02@@B?F65 L0*%!0E0?=@<:2>D039:890<:>604 L0,>:F6BC2<0!>@ED03F070CF-4 L0 :89077:4:6>4I L0 ? *0?=@<:2>D06C:8> '90#2,'40').'/43020F11-*%#4*0/3 24D?BI0ED?=2D:?> .*0*6B:6C +6CD020%62CEB6=6>D ED?=2D650*6BF:46 BF07BFA.0*:>8<60'ED@ED

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: L0$?G0?CD L04D:F60 ?G6B024D?B0?BB64D:?>070*.*0BAA020BFA L0,>:F6BC2<0!>@ED03F070CF-4 L0!>@ED0+B2>C:6>D0(B?D64D650!BAAA7E L0!&0 2:<0%?E>D:>80B24;6D0F2:<23<6 );0%4.)60 )+0)16502033/,'%6,215 24D?BI0ED?=2D:?> *.*FA7BFA.0*6B:6C +6CD020%62CEB6=6>D

Contextual Info: BCW29 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Vcso -3 0 V Collector-Emitter Voltage V ceO -2 0 V Emitter-Base Voltage V ebo -5 .0 V Collector Current

Contextual Info: L0,?:F6BC2=0!?AED03F070CF-4 L @G6B024D@B0@BB64D650 L CAA10(62<0(@G6B042A23:=:DI0@?0CE-0@EDAED L C0062B0.2BB2?DI L !?5:F:5E2=0@EDAED025;ECD>6?D '90#2,'40' .'/43010D11-*%#4*0/3 24D@BI0ED@>2D:@? (B:?D6B02?50%@D@B0B:F6C #:@C<C 1.7(0*6B:6C BAA.0D@0EEA.

Contextual Info: L0,>:F6BC2<0!>@ED03080D-4 L0 ?G6B024D?B0?BB64D650 L0DBB10(62;0(?G6B042@23:<:DI L0D0062B0.2BB2>DI L0$6CC0D92>0B9=062BD90<62;28604EBB6>D *<0&5/*70 *,1*276010440-(&7-326 24D?BI0ED?=2D:?> 1.*8(0*6B:6C +6CD020%62CEB6=6>D CB.0D?0FB.0 *:>8<60'ED@ED0(?G6B0*E@@<:6C