250SQ Search Results

D2011UK

Contextual Info: TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 3 6 F A 5 4 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate

D2211UK

Contextual Info: TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED L I P H G FEATURES DBC3 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D2256UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C D E B 8 1 2 7 R A 3 6 F 5 4 Q O N M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL J K L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

D2211UK

Contextual Info: TetraFET D2211UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 F A 3 6 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED L I P H G FEATURES DBC1 Package • SIMPLIFIED AMPLIFIER DESIGN

SSSB219

Contextual Info: SSSB219 6 GHz ÷2/4/8/16 Prescaler July 2003 The SSSB219 is one of a range of very high speed low power prescalers for professional applications. The dividing elements are static D type flip flops and therefore allow operation down to DC if the drive signal is a pulse waveform with

Contextual Info: TetraFET D1011UK-DBC METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED L I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN

M22-AK10

Abstract: M22-WRLK-Y M22-XST M22-PV Moeller M22-PV 216876 M22-DL-G-X1 M22-TC M22-WLK3-W M22-KC01 M22S-PVL
Contextual Info: 2/0 Control Circuit Devices Control Circuit Devices Moeller HPL0211-2004/2005 Control Circuit Devices 2/1 Control Circuit Devices Moeller HPL0211-2004/2005 2/2 Contents Control Circuit Devices Moeller HPL0211-2004/2005 RMQ-Titan Control Circuit Devices Grid dimensions: 30 x 40/30 x 50 mm

D2253

Abstract: D2253UK
Contextual Info: TetraFET D2253UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package PIN 1 Source Common PIN 5 Source (Common)

d2253

Abstract: D2253UK
Contextual Info: TetraFET D2253UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

D2053UK

Contextual Info: TetraFET D2053UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package • SUITABLE FOR BROAD BAND APPLICATIONS

d2053

Abstract: D2053UK
Contextual Info: TetraFET D2053UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

SL-100-L-RYG/24

Abstract: FAK-SW Moeller M22-PV R-205 M22-WS-SA Moeller M22-PV 216876 M22-WRK3/K20 M22-DDL EMERGENCY OFF PUSH BUTTON M22-CLED-B
Contextual Info: 02/002 Moeller HPL0211-2001/2002 Control Circuit Devices Overview Control Circuit Devices RMQ Titan Grid dimensions: 30 x 40/30 x 50 mm Mounting diameter: 22.3 mm System overview Page 02/004 Complete units for front mounting 02/006 Complete units for surface mounting

d2253

Abstract: D2253UK
Contextual Info: TetraFET D2253UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

6 ghz amplifier 20w

Abstract: D2256UK
Contextual Info: TetraFET D2256UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

3595

Abstract: 8A 003 D2256UK d2256
Contextual Info: TetraFET D2256UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package PIN 1 Source Common PIN 5 Source (Common)

d2254

Abstract: D2254UK
Contextual Info: TetraFET D2254UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package PIN 1 Source Common PIN 5 Source (Common)

D2054UK

Contextual Info: TetraFET D2054UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package PIN 1 Source Common PIN 5 Source (Common)

Contextual Info: TetraFET D2254UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C D E B 8 1 2 7 R A 3 6 F 5 4 Q O N M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL J K L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

d2254

Abstract: D2254UK
Contextual Info: TetraFET D2254UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

M22-WS-SA

Abstract: FAK-SW Moeller M22-PV SL-100-L-RYG/24 M22-WRK M22-CK M22-AK11 M22-K01-GVP 216922 moeller key-operated selector switch
Contextual Info: 02/002 Moeller HPL0211-2001/2002 Control Circuit Devices Overview Control Circuit Devices RMQ Titan Grid dimensions: 30 x 40/30 x 50 mm Mounting diameter: 22.3 mm System overview Page 02/004 Complete units for front mounting 02/006 Complete units for surface mounting

Contextual Info: TetraFET D1011UK-DBC METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED L I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN

SML3121D

Contextual Info: SML3121D METAL GATE POWER FET MECHANICAL DATA E B D GOLD METALLISED MULTI-PURPOSE SILICON POWER FET 8 1 2 7 R A 3 6 F 5 4 Q O N M J K L I P H G DBC3 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate PIN 3 Drain PIN 7 Gate PIN 4 Source PIN 8 Source DIM

D2254UK

Contextual Info: TetraFET D2254UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package • SUITABLE FOR BROAD BAND APPLICATIONS

D2211UK

Contextual Info: TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED L I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN