250V 10A MOSFET Search Results

RCX100N25

Contextual Info: RCX100N25 RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCX100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

12SW

Contextual Info: RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

FS10UM5

Abstract: FS10UM-5 08GS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 • V d s s . 250V • ros ON (MAX) . 0.52Í2 • Id . 10A

Contextual Info: Ordering number : EN*A2339 NDDP010N25AZ Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 10A, 420mΩ, DPAK/IPAK Features Electrical Connection • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • 100% Avalanche Tested

Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides

IRHNJ57234SE

Abstract: smd diode 64A
Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides

Contextual Info: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides

Contextual Info: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides

IRHNJ57234SE

Abstract: JANSR2N7487U3 smd diode 64A
Contextual Info: PD - 93837A IRHNJ57234SE JANSR2N7487U3 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/704 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level 100K Rads (Si) RDS(on) 0.40Ω ID 10A QPL Part Number

Contextual Info: L V X v U -X A 7 -M 0 S F E T LVX Series Power MOSFET 2SK1394 I W & T ffe m OUTLINE DIMENSIONS FP10V25 250V 10A • A ± l S * (C is s ) Ö ''M U V I C l* D A V 7 ’ 7 . f ê f f i A * g  ô î^ â : l A •s m m w -M eti-an, smmssmcoDc/Dc□ v a-s*

DIODE KIV 4

Abstract: DIODE KIV 074I K1393 diode KIV 41 2SK1393 F10V25 DIODE KIV 2
Contextual Info: LVXS/'J-X M7-M0SFET LVX SERIES POWER MOSFET WM-j-iim O U T L IN E D IM E N S IO N S 2SK1393 F10V25 250v 10a • Æ fê S i R A TIN G S ■ A b s o lu te M axim u m R a tin g s m Ite m g ft y- S to ra g e T e m p e ra tu re Tsit; C h annel T e m p e ra tu re

v1h diode

Abstract: 2SK1394 FP10V25 ITO-220 current source 5A ac D 4602
Contextual Info: I LVXv'J-X / f 7-M 0SFET LVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1394 FP10V25 I 250V 10A • Æ f ê ii RATINGS A b s o lu te M axim u m R a tin g s m :Ìll V Sym bol h Ite m 0k f t C o n d itio n s & I & m R a tin g s 'H f* U n it S to r a g e T e m p e ra tu r e

F10V25

Contextual Info: LV X ^U -X / 19-MOSFET LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1393 F 1 0 V 2 5 250V 10A ■ R A TIN G S ■ A b s o lu te M a x im u m « a R a tin g s BË ^ S y m b ol Ite m m & C o n d itio n s M R a tin g s m Ä it . U n it f 7tì~ i m j l :

F10V25

Abstract: mosfet stk 2SK1393 TO-220-4
Contextual Info: LVXvU -X /\° 7 —MOSFET LVX S e rie s P o w e r M O S FE T 2SK1393 o u t l in e d im e n s io n s [F10V25] 250V 10A • A i Ä Ciss !g ic ifn ;w ;p ;* B A 2 ® « tf'J \£ U o •X'f 'y^y-y-P-lA f f i S U V m it • 3 c 8 S M « S •thlJsäf, S J M is 5 l? ® D C /D C I)V A -5

250v 10A mosfet

Abstract: MOSFET 250V 10A
Contextual Info: MITSUBISHI Nch POWER MOSFET -sas— FS20UMA-5A soW HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING © Dimensions in mm o@© © GATE © DRAIN ©SOURCE © DRAIN • 10V DRIVE . 250V

FS20UMA-5A

Abstract: 250v 10A mosfet
Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS20UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0

250v 10A mosfet

Contextual Info: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W>^ FS20KMA-5A »ft fin*' slljü\ecl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 250V

250v 10A mosfet

Contextual Info: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W>^ FS20UMA-5A »ft fin*' slljü\ecl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm o @ • 10V DRIVE • V d s s . 250V

mosfet 10V 10A

Abstract: 250v 10A mosfet FS20KMA-5A
Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS20KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2