250V 10A TF 240 Search Results
250V 10A TF 240 Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG250V2YMS3 |
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N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A |
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250V 10A TF 240 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tf 216 10a 250v
Abstract: W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103
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10Amp K10B-077 K10B-087 K10B-094 K10B-099 K10B-103 K10B-113 K10B-116 K10B-121 K10B-128 tf 216 10a 250v W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103 | |
MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
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OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a | |
250V 10A TF 240
Abstract: 100-C
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OCR Scan |
20/ts 200juH 250V 10A TF 240 100-C | |
5V 10A voltage regulators
Abstract: 200mH PTC10009
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OCR Scan |
PJC10008, 200mH 5V 10A voltage regulators 200mH PTC10009 | |
Contextual Info: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV |
OCR Scan |
2SK1276A | |
TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Abstract: 250V 10A TF 106
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OCR Scan |
D0004S4 10001P O-247 TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON 250V 10A TF 106 | |
Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing |
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4167A O-257AA) IRFY11N50CMA O-257AA | |
Contextual Info: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
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O-257AA) IRFY11N50CMA O-257AA | |
DM t 96 10a 250v
Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
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4167A O-257AA) IRFY11N50CMA O-257AA DM t 96 10a 250v IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR | |
DF184S
Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
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E117626 JET2926-32001-1001-1009 HH05009-2004A-2019A 2010/Nov DF184S DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S | |
DF216S
Abstract: DF98S DF280S
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E117626 JET2926-32001-1001-1009 HH05009-2004A-2019A 2013/Feb DF216S DF98S DF280S | |
2SK1276AContextual Info: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit |
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2SK1276A 2SK1276A | |
tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
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TJ142D TJ152D TJ78D TJ99D tf 216 10a 250v DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor | |
limit switch VDE 0660
Abstract: VDE 0660 iec 337 pt TZ-8108 TZ-8167 CS10N061C2 CS10N021C2 CSA-012 CFS-302 TZ-6103 CM1301
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14VDC 30VDC 125VDC 250VDC CZ-93BPG01 BPT01 CPG01 CPT01 CSS-25 CZ-93BPG02 limit switch VDE 0660 VDE 0660 iec 337 pt TZ-8108 TZ-8167 CS10N061C2 CS10N021C2 CSA-012 CFS-302 TZ-6103 CM1301 | |
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Contextual Info: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit |
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2SK1276A | |
Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating |
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50V/500V P2H4M441L P2H4M440L P2H4M441L 150MAX -441L -440L | |
Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating |
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50V/500V PD4M441L PD4M440L PD4M441L 150MAX -441L -440L | |
induction heating CircuitContextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating |
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50V/500V PD4M441L PD4M440L PD4M441L 150iMAX 56i/W -441L -440L induction heating Circuit | |
Contextual Info: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides |
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PD-93837C IRHNJ57234SE MIL-STD-750, MlL-STD-750, | |
Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating |
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PD4M441L PD4M440L 50V/500V PD4M441L -441L -440L | |
Mosfet 30A 250VContextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating |
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50V/500V P2H4M441L P2H4M440L P2H4M441L 150iMAX 56i/W -441L -440L Mosfet 30A 250V | |
Contextual Info: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides |
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PD-93837C IRHNJ57234SE MIL-STD-750, MlL-STD-750, | |
IRHNJ57234SE
Abstract: JANSR2N7487U3 smd diode 64A
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3837A IRHNJ57234SE JANSR2N7487U3 MIL-PRF-19500/704 estab394A/ MIL-STD-750, MlL-STD-750, IRHNJ57234SE JANSR2N7487U3 smd diode 64A | |
IRHY57234CMSE
Abstract: T0-257AA
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O-257AA) IRHY57234CMSE IRHY57234CMSE O-257AA MIL-STD-750, MlL-STD-750, T0-257AA |