253FL7 Search Results

Contextual Info: C OL L H E R SEMICONDUCTOR I NC 4ÔE D 22 307^5 00D1751 SE059 i -OA fl75 * C 0 L _H ~ ~ ' 03 - \ 3 O utline D raw ings SCHOTTKY BARRIER D IO D E • Features • Surface m ou nt device • Low V f • S u p e r h ig h speed s w itc h in g

Contextual Info: FU JI 2SK2766-01R N-channel MOS-FET S tlM s u ltìU K FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

7MBR75SB060

Abstract: thermistor STT-300H
Contextual Info: SPECIFICATION D e v i c e Name P o we r This and thd Information herein Is ih« property of Fuji Eieetnc Co.lid.They »h»Hbe neither reproduced. copied, lent. or disclosed in any way whatsoever for the use of any third part/nor used for the manufacturing purposes without

fuji inverter LM

Abstract: fuji inverter modul 7MBR35SB120 600Y
Contextual Info: ± SPECIFICATION D e v i c e Name : I n t e g r a t e d Module 7 MB R 3 5 S B 1 2 0 Type Name Spec. No. Power : M S 6M 0 4 0 5 F u j i E l e c t r i c C o . , Ltd. Matsumoto F a c t o r y DATE DRAWN D 'C . - NAME APPRO VED Fuji Electric C a,Lid ‘i ï M 5 MS 6 M

Contextual Info: FUJI H T U K S T I S D 1 E IGBT & FWD 600 V 5A MBG 05D-060 Fuji Discrete Package IGBT Outline Drawing • Features Square R B SO A >Low Saturation Voltage •Less Total Power Dissipation *Minimized Internal Stray Inductance > ■ Applications High Power Switching