256 WORD BY 8 BIT RAM Search Results

si08

Contextual Info: O K I Semiconductor MSM518122 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.

TW8108

Abstract: si08
Contextual Info: O K I Semiconductor M SM 54C865 65,536-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM54C865 is a 512Kbit CMOS multiport DRAM composed of a 65,536-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asy nchronously.

si08

Abstract: 54c864
Contextual Info: O K I Semiconductor MSM54C864 65,536-Word x 8-Bit Multiport DRAM D ESC R IP T IO N The MSM54C864 is a 512Kbit CMOS multiport memory composed of a 65,536-word by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,

Contextual Info: O K I Semiconductor MSM518122 131,072-Word x 8-B it Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.

msm518121

Abstract: si08
Contextual Info: O K I Semiconductor MSM518121A 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamicrandom access memory, RAM port, and a 256-word by 8-bitstatic serial access memory,

MSM54C865

Abstract: MSM54C865-10 MSM54C865-70 MSM54C865-80
Contextual Info: E2L0011-17-Y1 ¡ Semiconductor MSM54C865 ¡ Semiconductor This version: Jan. 1998 MSM54C865 Previous version: Dec. 1996 65,536-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM54C865 is a 512Kbit CMOS multiport DRAM composed of a 65,536-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and

MSM518122

Contextual Info: E2L0015-17-Y1 ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and

MSM54C864

Abstract: MSM54C864-10 MSM54C864-70 MSM54C864-80
Contextual Info: E2L0010-17-Y1 ¡ Semiconductor MSM54C864 ¡ Semiconductor This version: Jan. 1998 MSM54C864 Previous version: Dec. 1996 65,536-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM54C864 is a 512Kbit CMOS multiport memory composed of a 65,536-word by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,

Contextual Info: E2L0015-17-Y1 ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and

MSM518122-JS/ZS

Contextual Info: December 1992 O K I Semiconductor MSM518122-JS/ZS 131,072 x 8-Bit Multiport RAM DESCRIPTION The MSM 518122-JS/ZS is a 1 Mbit CMOS multiport DRAM composed of a 131,072 word by 8-bit dynamic random access memory and a 256 word by 8-bit static serial access memory,

MSM518122

Contextual Info: ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM @–Ú˘ ˘†Ò The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and

MSM518121A

Contextual Info: ¡ Semiconductor ¡ Semiconductor MSM518121A This version: Jan. 1998 MSM518121A Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,

MSM518122

Abstract: SI05 ZIP40-P-475-1 si08
Contextual Info: O K I Semiconductor M SM 518122 131,072-W ord x 8 -B it M ultiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.

dynamic ram 8 bit 256 locations

Abstract: I1130
Contextual Info: MOV i 2 1990 Order this data sheet by MCM528128A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM528128A Product Preview 128K x 8 CMOS Multiport Video RAM Page Mode The M C M 5 281 28 A is a C M O S multiport video RAM. It is organized as a 131,072 by 8-bit word dynamic random access memory RA M port with a 256 by 8-bit word static,

cdp1822

Contextual Info: S H A R R C I S D P 1 8 2 2 , S E M I C O N D U C T O R C D P 1 8 2 2 C 256-Word x 4-Bit LSI Static RAM August 1996 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys­

R1LV5256ESP-7SI#B0

Abstract: R1LV5256ESA
Contextual Info: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized

Contextual Info: R1LP5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0070EJ0100 Rev.1.00 2011.04.13 Description The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP5256E Series has realized higher

Contextual Info: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized

R1LP5256ESP

Abstract: R1LP5256ESP-5SRB0 R1LP5256ESA R1LP5256ESP-7SI#B0
Contextual Info: R1LP5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0070EJ0100 Rev.1.00 2011.04.13 Description The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP5256E Series has realized higher

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MCM10144 MECL 256 x 1-BIT RANDOM ACCESS MEMORY 256 X 1-BIT R AN D O M ACCESS M EM ORY The MCM 10144 Is a 256 word x 1-bit Read/Write Random Access Memory. Data is accessed or stored by means of an 8-bit address decoded on chip, it has a non-inverting data out, a separate

Contextual Info: Specifications in this document are tentative and may be subject to change. R1LP5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0070EJ0001 Rev.0.01 2010.12.09 Description The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated

Contextual Info: MOTOROLA H SEMICONDUCTOR TECHNICAL DATA MCM10144 256 x 1-BIT RANDOM ACCESS MEMORY The MCM10144 is a 256 word x 1-bit Read/Write Random Access Memory. L SUFFIX Data is accessed or stored by means of an 8-bit address decoded on chip. C ER A M IC PACKAGE It has a non-inverting data out, a separate

M5L8155P

Abstract: 5L8155P M5L8155
Contextual Info: M ITSUBISHI LSI* M 5L8155P 2048-BIT STA TIC RAM WITH I/O PO R TS AND TIM ER DESCRIPTION The M5L8155P is a 2K-bit RAM 256-word by 8-bit fabri­ cated by the N-ohannel silicon-gate ED-M OS technology. This LSI has 3 I/O ports and a 14-bit counter/timer which

Contextual Info: March 1987 DM10414/DM10414A 256 x 1 ECL Random Access Memory General Description Features The DM10414, DM10414A is a 256-word by 1-bit ECL ran­ dom access memory. The fully static memory is designed with active low chip selects and separate I/O pins. The 8