256 X 1 STATIC RAM Search Results

X2444

Contextual Info: Kicnr Preliminary Information X24C44 256 Bit 1 6 x 1 6 Bit Serial Nonvolatile Static RAM FEATURES D E S C R IP T IO N • • • • The Xicor X24C44 is a serial 256 bit NOVRAM featuring a static RAM configured 1 6 x 1 6 , overlaid bit by bit with a nonvolatile E2PROM array. The X24C44 is fabricated

93L422

Abstract: P93U422 QQQ177S p4c422 data
Contextual Info: PERFORMANCE SEMICONDUCTOR 5ÜE 7Gb£?5T7 D 0 0 1 7 7 4 0Ô5 « P S C P93U422 HIGH SPEED 256 x 4 CMOS STATIC RAM FEATURES CMOS for Low Power — 440 mW Commercial — 495 mW (Military) • Universal 256 x 4 Static RAM ■ One part, the 93U422, replaces the following

CY7C123

Abstract: 7C123
Contextual Info: CY7C123 •* C Y P R E S S 256 X 4 Static RAM Features Functional D escription • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 1 0 ns (military) • Low power — 660 mW (commercial)

Contextual Info: HM6207/HM6207H Series 1-Bit CMOS Static RAM 262144-Word x 1-Bit High Speed CMOS Static RAM The Hitachi HM6207 and HM6207H are high speed 256k static RAMs organized as 256-kword x t-b it. They realize high speed access tim e 25/35/45ns and low power consumption,

CDP1822CD

Abstract: CDP1822 CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX
Contextual Info: CDP1822, CDP1822C 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity

MCM2112

Abstract: MC7400
Contextual Info: MCM2112A L/L2 /L4 MCM2112A P/P2/P4 Advance Information MOS N -C H A N N E L , S IL IC O N •G A T E 256 x 4-BIT STATIC RANDOM ACCESS MEMORY 256 x 4-BIT STATIC RANDOM ACCESS MEMORY T he M C M 2 1 12 A is a 2 56 x 4 -b it random access m em o ry fabricated

Contextual Info: tl E ]> • 4 4 Tti2 0 3 0 0 2 1 D 7 S IflO ■ H I T S HM624257A Series - Preliminary 262,144-word x 4-bit High Speed CMOS Static RAM HITACHI/ LOGIC/ARRAYS/MEM The Hitachi HM624257A is a high speed 1 M Pin Arrangement Static RAM organized as 256-kword x 4-bit. I t _

Contextual Info: M^E D MATRA M H S „ Preview • 5ûbô4Sb = *^ = B ^ U 0005505 H S M=]5 ■ M M H S _ IIIÌM ÌIII January 1991 M 1 0 E 4 2 2 /M 1 0 0 E 4 2 2 DATA SHEET 256 x 4 ECL STATIC RAM FEATURES 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER

IR 10e

Contextual Info: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA

SAB 8155 p

Abstract: I8155 8155 programmable pin diagram AMD 8156 SAB 8155 8155H-2 PC05 8185A 8155-2B 8155B
Contextual Info: 8 1 5 5 H / 8 1 5 6 (H ) 8155(H)/8156(H) 2048-Bit Static MOS RAM with I/O Ports and Timer DISTINCTIVE CHARACTERISTICS • • • • 256 word x 8 -bits Single + 5 V power supply Completely static operation Internal address latch 2 programmable 6 -bit I/O ports

Contextual Info: 8155H/8156H 8155H/8156H 2048-Bit Static MOS RAM With I/O Ports and Timer DISTINCTIVE CHARACTERISTICS • • • • 256 word x 8-bits Single + 5V power supply Completely static operation Internal address latch 2 programmable 8-bit I/O ports 1 programmable 6-bit I/O port

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

DS42514

Contextual Info: DS42514 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: HM624257 Series HITACHI/ LOGIC/ARRAYS/MEM SIE » 262144-WORD x 4-BIT HIGH SPEED CMOS STATIC RAM 44^203 G 0 1 Ô G 72 104 - HIT2 \a > The Hitachi HM624257 is a high speed 1M static RAM organized as 256-kword x 4-bit. It realizes high speed access time 35/45 ns and low power consumption, employing the

Contextual Info: A S c h lu m b e rg e r C o m p a n y F10414 256 x 1-Bit Static Random Access M em ory B ipolar Division F10K ECL Product Description The F10414 is a 256-bit read/w rite Random Access M em ory RAM , organized 256 w ords by one bit. It is designed for high-speed scratchpad, control and buffer

Contextual Info: Tem ic HM 65797 MATRA MHS 256 K X 1 High Speed CMOS SRAM Introduction The HM 65797 is a high speed CMOS static RAM organized as 262, 144 x 1 bit. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by an active low chip

ICE 47E

Abstract: oSC-70 7MB4066
Contextual Info: INTE G R A T E D DEV ICE 47E D B 4355 7 7 1 O Q I Q I G b b B I I D T PRELIMINARY IDT7MB4065 IDT7MB4066 256K x 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES - q é r Z ' i - IM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static

Mascot AS

Abstract: MASCOT VRL
Contextual Info: Tem ic M65697 Semiconductors 256 K X 1 Very Low Power CMOS SRAM Introduction The M65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. With this process, TEMIC is the first to bring the solution

SCT T

Contextual Info: RA MTRO N R a M V H E CORP D | 7555015 DGOGGEfc, FMx 801 FRAMTM T R Q N 1 I T - 4 6 -*3-57 256 x 1 Nonvolatile Static RAM c o r p o r a t io n Design Goal Specification Features 1Ferroelectronic Random Access Memory FRAM Demonstration Vehicle • "True" Nonvolatile CMOS Static RAM

Contextual Info: Temic M65697 Semiconductors 256 K X 1 Very Low Power CMOS SRAM Introduction The M65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. With this process, TEMIC is the first to bring the solution

Contextual Info: Tem ic M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for

1709 013

Abstract: CY7C197BN CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC
Contextual Info: CY7C197BN 256 Kb 256K x 1 Static RAM General Description [1] Features • • • • • Fast access time: 12 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL compatible inputs and outputs Available in 24-lead DIP and 24-lead SOJ

kv1215

Contextual Info: 256 K x 8 SRAM molaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0 : June 1992 M osaic ADVANCE PRODUCT INFORMATION S em iconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO A1 A2 A3 00 01 A4 A5 A6 A7 AS A13 D2 Features Fast Access Times of 85/100/120/150 nS