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    IC 8421

    Abstract: No abstract text available
    Text: ^EDL EDI8F8259C 256KxS SRAM Module ELECTRONIC DESIGNS, INC 256Kx8 Static RAM CMOS, Module Features 256Kx8 bit CMOS Static The EDI8F8259C is a 2 megabit CMOS Static RAM Random Access Memory based on two high speed 256Kx4 Static RAMs mounted Access Times 20 thru 35ns


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    PDF 256Kx8 EDI8F8259C 256KxS 256Kx4 PinoF8259C35M6C IC 8421

    FK 201

    Abstract: No abstract text available
    Text: Preliminary KM68S2000 Family CMOS SRAM 256Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: CM^m CMOS • Organization : 256KxS • Power Supply Voltage KM68S2000 Fam ily: 2.3-3.3V • Low Data Retention Voltage : 2V Min


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    PDF KM68S2000 256Kx8 256KxS 32-TSQP1-0820F, 32-TSOP1-OB13 FK 201

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F8259C 256KxS SRAM Module ELECTRONIC DESIGNS, INC 256Kx8 Static RAM CMOS, Module Features 256Kx8 bit CMOS Static The EDI8F8259C is a 2 megabit CMOS Static RAM Random Access Memory based on two high speed 256Kx4 Static RAMs mounted Access Times 20 thru 35ns


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    PDF EDI8F8259C 256KxS 256Kx8 EDI8F8259C 256Kx4 EDI8F825935M6C

    ma 6197

    Abstract: EDI8F8259C20M6C EDI8F8259C25M6C EDI8F8259C35M6C IC 8421 A39E
    Text: ^EDI EDI8F8259C 256Kx8 SRAM Module ELECTRONIC DESIGNS. INC 256Kx8 Static RAM CMOS, Module Features 256Kx8 bit CMOS Static The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


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    PDF EDI8F8259C 256Kx8 EDI8F8259C 256Kx4 EDI8F8259C20M6C EDI8F8259C25M6C EDI8F8259C35M6C 508-836-4850-Electronic ma 6197 IC 8421 A39E