Untitled
Abstract: No abstract text available
Text: 3.3V Memory Card Expansion connectors Micron Technology, FLASH Memory, 4G, in socket Spansion, FLASH, 256MEG ISSI, SRAM, 16MEG Top View 3.3V Memory Card Power Switch Compatibility: C5505 EVM TI Part #: TMDSMCD5505 TI Price: $ 149.00 USD 5 volt in Size: 1.99 x 1.07” 50.55 x 27.18mm
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256MEG
16MEG
C5505
TMDSMCD5505
x-113
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Untitled
Abstract: No abstract text available
Text: UG7256D74Q8MU Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM w/ECC based on 18 pcs 128M x 8 Stacked 4 Bank DDR SDRAM 8K Refresh FEATURES • • • • • • • 2GB (256Meg X 72)
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UG7256D74Q8MU
256Meg
64ms/8K)
DDR400)
1250mil)
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D 2395
Abstract: 99C100032RP-7 TM5005
Text: 1 GIGA BIT DYNAMIC RANDOM ACCESS MEMORY MCM SPACE ELECTRONICS INC. 99C100032RP SPACE PRODUCTS GROUP 99C100032RP Block Diagram RAS0 - RAS3 CAS0 - CAS3 A0 - A11 256Megabit (32M x 8-bit) WE0 OE0 CAS3 RAS3 CAS2 RAS2 CAS1 RAS1 CAS0 RAS0 WE0 OE0 A0 - A11 DQ0 - DQ7
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99C100032RP
99C100032RP
256Megabit
98Rev6
D 2395
99C100032RP-7
TM5005
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UltraSPARC-IIIi
Abstract: NVRAM for Sun UltraSparc IIi UltraSPARC-III STP2003QFP 4900 H02 gigabyte MOTHERBOARD CIRCUIT diagram A27 639 SME2411 SME1430LGA-360 SME1430LGA-440
Text: SME1430LGA-360 SME1430LGA-440 SME1430LGA-480 May 1999 UltraSPARC -IIi CPU DATA SHEET Highly Integrated 64-Bit RISC; L2-Cache, DRAM, PCI Interfaces DESCRIPTION The SME1430LGA CPU UltraSPARC-IIi microprocessor is a highly-integrated, 64-bit, SPARC V9 superscalar
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SME1430LGA-360
SME1430LGA-440
SME1430LGA-480
64-Bit
SME1430LGA
64-bit,
SME1040
SME2411)
UltraSPARC-IIIi
NVRAM for Sun UltraSparc IIi
UltraSPARC-III
STP2003QFP
4900 H02
gigabyte MOTHERBOARD CIRCUIT diagram
A27 639
SME2411
SME1430LGA-360
SME1430LGA-440
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TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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UG7256D75Q8MZ
Abstract: No abstract text available
Text: UG7256D75Q8MZ Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Register & PLL DIMM w/ECC based on 18 pcs 128M x 8 Stacked DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG7256D75Q8MZ
256Meg
64ms/8K)
CK700
UG7256D75Q8MZ
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Untitled
Abstract: No abstract text available
Text: UG7256D66Q8MP Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 16 pcs 128M x 8 Stacked DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG7256D66Q8MP
256Meg
64ms/8K)
1250mil)
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Untitled
Abstract: No abstract text available
Text: UG7256D7584LE Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Register & PLL DIMM w/ECC based on 36 pcs 128M x 4 DDR SDRAM 8K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View)
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UG7256D7584LE
400mil
D0-D35
D0-D35
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB: x64, DR 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM Unbuffered DIMM (UDIMM) MT16HTF6464A – 512MB MT16HTF12864A – 1GB MT16HTF25664A – 2GB For the latest data sheet and for component data sheets, refer to Micron’s Web site: www.micron.com/products/ddr2
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512MB,
240-Pin
MT16HTF6464A
512MB
MT16HTF12864A
MT16HTF25664A
240-pin,
PC2-3200,
PC2-4200,
PC2-5300,
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Untitled
Abstract: No abstract text available
Text: 2GB x72, ECC, DR 200-Pin DDR2 SDRAM SORDIMM Features DDR2 SDRAM SORDIMM MT18HTS25672RHZ – 2GB Features Figure 1: 200-Pin SORDIMM (R/C B) • 200-pin, small-outline registered dual in-line memory module (SORDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or
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200-Pin
MT18HTS25672RHZ
200-pin,
PC2-4200,
PC2-5300,
PC2-6400
18-compatible)
09005aef83f287c1
hts18c256x72rhz
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48D32DRP
Abstract: CD10 CD11 CD12 dRAM edac 32mx8b 20 pin edac cd2397 11NC60
Text: PRELIMINARY SPACE ELECTRONICS INC. 1 GIGABIT ERROR CORRECTED DRAM SPACE PRODUCTS 98C100032DRP DRAM EDAC 1 Gigabit DRAM DATA BITS MD [31:0] CD[31:0] 256Mb 32Mx8b 256Mb (32Mx8b) 256Mb (32Mx8b) 256Mb (32Mx8b) EDAC [31:0] - CBG [7:0] BIT ERROR CB [7:0]
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98C100032DRP
256Mb
32Mx8b)
48D32DRP
CD10
CD11
CD12
dRAM edac
32mx8b
20 pin edac
cd2397
11NC60
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TMS320C40
Abstract: SMJ320C40 application SMJ320C40 A7261
Text: SMJ320MCM41A SINGLE SMJ320C40 MULTICHIP MODULE SGMS719 – JUNE 1995 D D D D D D D D Performance – 40 MFLOP With 256-Megabyte / s Burst I/O Rate for 40-MHz Modules – 33 MFLOP With 211-Megabyte / s Burst I / O Rate for 33-MHz Modules – 128K x 32 Zero-Wait-State Local Memory;
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SMJ320MCM41A
SMJ320C40
SGMS719
256-Megabyte
40-MHz
211-Megabyte
33-MHz
MIL-I-38535
TMS320C40
SMJ320C40 application
A7261
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26F160
Abstract: NEXFLASH 26F080
Text: IS26F080A IS26F160 8M/16M-bit Serial Flash Memories with 2-pin NXS Interface Features n Tailored for Portable and Mobile Media-Storage − Ideal for portable/mobile applications that n 8/16-megabits of NexFLASH Serial Memory − 2,048/4,096 sectors of 536 bytes each
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IS26F080A
IS26F160
8M/16M-bit
8/16-megabits
10K/100K
26F160
NEXFLASH
26F080
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single phase UPS 230V
Abstract: 1000 va ups repair manual APPHDD500 AX150SC gigabyte ices 003 class b SSR212PP IEC320-C14 circuit for domestic UPS design intel canada ices 003 class b PC2100
Text: Intel Storage System SSR212PP Based on EMC AX-150* Technology Technical Product Specification Hardware Revision 1.1 Storage Group Technical Marketing Revision History Intel® Storage System SSR212PP TPS Revision History Date Revision Modifications Number
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SSR212PP
AX-150*
SSR212PP
single phase UPS 230V
1000 va ups repair manual
APPHDD500
AX150SC
gigabyte ices 003 class b
IEC320-C14
circuit for domestic UPS design
intel canada ices 003 class b
PC2100
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S29GL128N90TFIR2
Abstract: s29gl256N10FAA02 S29GL512N11FFA02 S29GL512N11FFIV10E S29GL512N11FFA022 S29GL256N10TFI020H S29GL064A11FFIS20 s29gl064a90tfir9 s29gl016a90tfir10 S29GL016A90TFIR2
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 16, 2008 Obsolescence Notification No: Subject: 2702 Obsolescence of the Discrete S29GL016A, S29GL032A, S29GL064A, S29GL128N, S29GL256N, and S29GL512N Products Spansion LLC is announcing the obsolescence of all valid combinations of the products listed below.
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S29GL016A,
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N,
S29GL512N
S29GL016A
16-Megabit
S29GL032A
32-Megabit
S29GL128N90TFIR2
s29gl256N10FAA02
S29GL512N11FFA02
S29GL512N11FFIV10E
S29GL512N11FFA022
S29GL256N10TFI020H
S29GL064A11FFIS20
s29gl064a90tfir9
s29gl016a90tfir10
S29GL016A90TFIR2
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2431A
Abstract: LAA064 on 4409 AM29LV400BB TS048 transistor on 4409 am29LV400BB55reit AM29LV320DB90EIT Am29LV400BT55REI Am29LV256MH113REI
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 15, 2005 Advanced Change Notification No: Subject: 2545 Obsolescence of Am29LVxxxM, Am29LV400B, Am29LV320D, Am29PDL640G, Am29PDL129H Spansion LLC is announcing the final phase of previously announced migrations to next generation
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Am29LVxxxM
Am29LV400B
Am29LV320D
Am29PDL640G
Am29PDL129H
AM29LV2562MH/L
AM29LV256MH/L
AM29LV1282MH/L
AM29LV128MH/L
AM29LV6402MH/L
2431A
LAA064
on 4409
AM29LV400BB
TS048
transistor on 4409
am29LV400BB55reit
AM29LV320DB90EIT
Am29LV400BT55REI
Am29LV256MH113REI
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-,
PC133-compliant
096-cycle
60-pin,
11x13
8M16
MT48LC16M8A2
MT48LC32M4A2
MT48LC8M16A2
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Untitled
Abstract: No abstract text available
Text: SamsungSemi conduct orEur ope2008 i magi net r ueupgr adecompat i bi l i t y What evert her easonf oryourcust omer ' snextPCmemor yupgr ade,you' l l wantt omakesur ecompat i bi l i t yi sagi ven,notapl easantsur pr i se.Wi t h Samsungpr emi um qual i t yPC memor
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DDR2 x32
Abstract: ELPIDA DDR2 Datasheet Unbuffered DDR2 SDRAM DIMM DDR2 layout 84 FBGA outline DDR2 SDRAM "DDR2 SDRAM" 84 FBGA DDR2 DDR2 x16
Text: DDR2 SDRAM Feature Comparison of DDR2 SDRAM, DDR SDRAM and SDRAM Items Clock frequency Transfer data rate I/O width Prefetch bit width Clock input Burst length Data strobe Supply voltage Interface /CAS latency CL Read latency Write latency Additive latency (AL)
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200/266/333/400/533MHz
400/533/667/800/1066Mbps
x4/x8/x16/x32
100/133/166/200/250MHz
200/266/333/400/500Mbps
E0474ED0
512Mb
DDR2 x32
ELPIDA DDR2
Datasheet Unbuffered DDR2 SDRAM DIMM
DDR2 layout
84 FBGA outline
DDR2 SDRAM
"DDR2 SDRAM"
84 FBGA
DDR2
DDR2 x16
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AT45DB2562
Abstract: No abstract text available
Text: This Document is Only Available Under NDA. For More Information, Please Contact Your Local Atmel Sales Office. 256-Megabit 2.7-volt Only Dual-interface DataFlash AT45DB2562 Preliminary Rev. 2419AX–11/01 1
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256-Megabit
AT45DB2562
2419AX
AT45DB2562
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Untitled
Abstract: No abstract text available
Text: UG7256D75Q4MQ Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Register & PLL DIMM w/ECC based on 18 pcs 256M x 4 Stacked DDR SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) • • •
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UG7256D75Q4MQ
256Meg
64ms/8K)
184-Pin
D0-D35
D0-D17
D18-D35
D0-D35
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Untitled
Abstract: No abstract text available
Text: UG7256D75Q4MQ-DZPA Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Register & PLL DIMM based on 18 pcs 256M x 4 Stacked DDR SDRAM 8K Refresh FEATURES • • • 184-Pin DIMM ABSOLUTE MAXIMUM RATINGS
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UG7256D75Q4MQ-DZPA
256Meg
64ms/8K)
1175mil)
256Max
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Untitled
Abstract: No abstract text available
Text: UG7256D74Q8MP Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM w/ECC based on 18 pcs 128M x 8 Stacked DDR SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) • • • •
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UG7256D74Q8MP
256Meg
64ms/8K)
1250mil)
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Untitled
Abstract: No abstract text available
Text: SMJ320MCM41D SINGLE-SMJ320C40 MULTICHIP MODULE SGKS002 – OCTOBER 1997 D D D D D D D D Performance – 40 MFLOPS Million Floating-Point Operations per Second With 256-Megabyte / s Burst I/O Rate for 40-MHz Modules – 128K Word x 32 Bit Zero-Wait-State
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SMJ320MCM41D
SINGLE-SMJ320C40
SGKS002
256-Megabyte
40-MHz
MIL-PRF-38535
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