256MX8BITS Search Results

Contextual Info: 204PIN DDR3 1333 SO-DIMM JM1333KSN-2G 2048MB With 256Mx8 CL9 Description Placement The JM1333KSN-2G is a 256M x 64bits DDR3-1333 SO-DIMM. The JM1333KSN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 204PIN DDR3 1066Mhz SODIMM JM1066KSN-4G 4096MB With 256Mx8 CL7 Description Placement The JM1066KSN-4G is a 512M x 64bits DDR3-1066 SO-DIMM. The JM1066KSN-4G consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 240PIN DDR3 1333 ECC UDIMM TS512MLK72V3N 4096MB With 256Mx8 CL9 Description Placement The TS512MLK72V3N is a 512M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS512MLK72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

TS256MSK64V1N

Contextual Info: 204PIN DDR3 1066 SO-DIMM TS256MSK64V1N 2048MB With 256Mx8 CL7 Description Placement The TS256MSK64V1N is a 256M x 64bits DDR3-1066 SO-DIMM. The TS256MSK64V1N consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 204PIN DDR3 1333 SO-DIMM 4096MB With 256Mx8 CL9 TS512MSK64V3N Description Placement The TS512MSK64V3N is a 512M x 64bits DDR3-1333 SO-DIMM. The TS512MSK64V3N consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 204PIN DDR3 1333 SO-DIMM TS256MSK64V3N 2048MB With 256Mx8 CL9 Description Placement The TS256MSK64V3N is a 256M x 64bits DDR3-1333 SO-DIMM. The TS256MSK64V3N consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 240PIN DDR3 1600 UDIMM JM1600KLN-2G 2048MB With 256Mx8 CL11 Description Placement The JM1600KLN-2G is a 256M x 64bits DDR3-1600 unbuffered DIMM. The JM1600KLN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

Contextual Info: 240PIN DDR3 1066 Registered DIMM TS1GKR72V1N 8GB With 256Mx8 CL7 Description Placement The TS1GKR72V1N is a 1G x 72bits DDR3-1066 Registered DIMM. The TS1GKR72V1N consists of 36pcs 256Mx8bits DDR3 SDRAM in FBGA package, 1 pcs register in 176 ball TFBGA package and a 2048 bits

Contextual Info: 240PIN DDR3 1333 ECC UDIMM TS256MLK72V3N 2048MB With 256Mx8 CL9 Description Placement The TS256MLK72V3N is a 256M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS256MLK72V3N consists of 9pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR3 1333 Registered DIMM TS512MKR72V3N 4GB With 256Mx8 CL9 Description Placement The TS512MKR72V3N is a 512M x 72bits DDR3-1333 Registered DIMM. The TS512MKR72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages, 1 pcs register in 177 ball TFBGA package and a 2048 bits

TS512MSK64V3N-I

Contextual Info: 204PIN DDR3 1333 SO-DIMM TS512MSK64V3N-I 2Rank 4GB With 256Mx8 CL9 Description Placement The TS512MSK64V3N-I is a 512M x 64bits DDR3-1333 2Rank SO-DIMM. The TS512MSK64V3N-I consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit

TS256MKR72V3N

Contextual Info: 240PIN DDR3 1333 Registered DIMM TS256MKR72V3N 2048MB With 256Mx8 CL9 Description Placement The TS256MKR72V3N is a 256M x 72bits DDR3-1333 Registered DIMM. The TS256MKR72V3N consists of 9pcs 256Mx8bits DDR3 SDRAMs in FBGA packages, 1 pcs register in 176 ball TFBGA package and a 2048 bits

JM1600KSN-4G

Contextual Info: 204PIN DDR3 1600Mhz SODIMM JM1600KSN-4G 4096MB With 256Mx8 CL11 Description Placement The JM1600KSN-4G is a 512M x 64bits DDR3-1600 SO-DIMM. The JM1600KSN-4G consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 240PIN DDR3 1333 UDIMM JM1333KLN-2G 2048MB With 256Mx8 CL9 Description Placement The JM1333KLN-2G is a 256M x 64bits DDR3-1333 unbuffered DIMM. The JM1333KLN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

Contextual Info: 240PIN DDR3 1333 Registered DIMM TS1GKR72V3N 8GB With 256Mx8 CL9 Description Placement The TS1GKR72V3N is a 1G x 72bits DDR3-1333 Registered DIMM. The TS1GKR72V3N consists of 36pcs 256Mx8bits DDR3 SDRAM in FBGA package, 1 pcs register in 176 ball TFBGA package and a 2048 bits

Contextual Info: 204PIN DDR3 1600 SO-DIMM JM1600KSN-2G 2048MB With 256Mx8 CL11 Description Placement The JM1600KSN-2G is a 256M x 64bits DDR3-1600 SO-DIMM. The JM1600KSN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

TS256MLK64V3N

Contextual Info: 240PIN DDR3 1333 UDIMM TS256MLK64V3N 2048MB With 256Mx8 CL9 Description Placement The TS256MLK64V3N is a 256M x 64bits DDR3-1333 unbuffered DIMM. The TS256MLK64V3N consists of 8pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR3 1066 ECC UDIMM TS512MLK72V1N 4096MB With 256Mx8 CL7 Description Placement The TS512MLK72V1N is a 512M x 72bits DDR3-1066 ECC Unbuffered-DIMM. The TS512MLK72V1N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 204PIN DDR3 1066 SO-DIMM JM1066KSN-2G 2048MB With 256Mx8 CL7 Description Placement The JM1066KSN-2G is a 256M x 64bits DDR3-1066 SO-DIMM. The JM1066KSN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

TwB 75

Abstract: K9E2G08U0M K9E2G08U0M-V K9E2G08U0M-Y hamming code 512 bytes
Contextual Info: Preliminary FLASH MEMORY K9E2G08U0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. June. 8th 2004 Advanced 0.1 1. Technical note is changed Oct. 25th 2004 Preliminary 0.2 1. The flow chart to creat the initial invalid block table is changed.

Contextual Info: Advanced FLASH MEMORY K9E2G08B0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Note1 of Program/Erase characteristics is added 2.Technical note is changed

qualcomm nand

Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Contextual Info: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

multiplane

Contextual Info: Preliminary FLASH MEMORY K9E2G08U0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. June. 8th 2004 Advanced 0.1 1. Technical note is changed 2. Note1 of Program/Erase characteristics is added

K9K2G08UOM

Abstract: 45db321 avr write read to mmc MT29F2G08AACWP fat mmc avr FPS009-3001 4.7uf 16v capacitor FET NC24 SMD smd transistor code b3 mt29f2g08
Contextual Info: ATEVK525 Mass Storage Board for AVR . Hardware User Guide Section 1 Introduction . 1-3