256K X 8 SRAM Search Results

LX50CM204

Contextual Info: LINVEX TECHNOLOGY, CORP. LX50CM204 256K x 8 Bit ROM and 32K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX50CM204 is a combination memory chip consist of 2M-bit Read Only Memory organized as 256K words by 8 bits and a 256K-bit Static

Contextual Info: LINVEX TECHNOLOGY, CORP. LX59CF232 256K x 8 Bit FLASH and 32K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF232 is a combination memory chip consist of 2M-bit FLASH Memory organized as 256K words by 8 bits and a 256K-bit Static

LX50CM232

Contextual Info: LINVEX TECHNOLOGY, CORP. LX50CM232 256K x 8 Bit ROM and 32K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX50CM232 is a combination memory chip consist of 2M-bit Read Only Memory organized as 256K words by 8 bits and a 256K-bit Static

LX59DF232

Contextual Info: PRELIMINARY LINVEX TECHNOLOGY, CORP. LX59DF232 256K x 8 Bit FLASH and 32K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59DF232 is a combination memory chip consist of 2M-bit FLASH Memory organized as 256K words by 8 bits and a 256K-bit Static

Contextual Info: DPS8256P8 256K X 8 CMOS SRAM MODULE DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access Memory SRAM module constructed on an epoxy laminate substrate using eight 256K x 1 C M O S RAM's in plastic surface mount packages. The DPS8256P8 features separate

Contextual Info: LINVEX TECHNOLOGY. CORP._ LX50CM 232 256K x 8 Bit ROM and 32K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX50CM232 is a combination memory chip consist of 2M-bit Read Only Memory organized as 256K words by 8 bits and a 256K-bit Static

Contextual Info: UG1A2568A9C2-A7 256K Bytes 256K x 8 SRAM 35Pin SIMM based on 32K X 8 Features General Description The UG1A2568A9C2-A7 is a 262,144 bits by 8 SIMM module.The UG1A2568A9C2-A7 is assembled using 8 pcs of 32K x 8 in 28 Pin 400mils SOJ/TSOP package mounted on a

Contextual Info: DPS256S8AN Dense-Pac Microsystems, Inc. O HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K X 8 monolithic

CYM1441

Abstract: CYM1441PZ-20C CYM1441PZ-25C CYM1441PZ-35C CYM1441PZ-45C 43A11
Contextual Info: CYM1441 256K x 8 Static RAM Module Features Functional Description D HighĆdensity 2Ćmegabit SRAM module D HighĆspeed CMOS SRAMs The CYM1441 is a very high performance 2Ćmegabit static RAM module organized as 256K words by 8 bits. The module is constructed using eight 256K x 1 static

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS256S8P 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS256S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 128K X 8 monolithic SRAM 's, an advanced high-speed C M O S decoder and decoupling

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface

IDT71V256

Abstract: IDT71V256SA P28-2 A 3101 8 pin
Contextual Info: IDT71V256SA 3.3V CMOS STATIC RAM 256K 32K x 8-BIT  LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache

Contextual Info: 'w CYM1441 CYPRESS 256K x 8 Static RAM Module Features Functional Description • High-density 2-megabit SRAM module The CYM1441 is a very high perform ance 2-megabit static RAM m odule organized as 256K words by 8 bits. T he m odule is constructed using eight 256K x 1 static

A62S8308

Contextual Info: A62S8308 Series Preliminary 256K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 RPELIMINARY History Issue Date Remark Initial issue October 8, 1998 Preliminary October, 1998, Version 0.0 AMIC Technology, Inc.

Contextual Info: DPS256Q8 Microsystems, I n e _ 256K X 8 C M O S SRAM M O D U L E DESCRIPTION: The DPS256Q8 is a 2 Megabit 256K X 8 CMOS Static RAM module constructed on a co-fired ceramic substrate using eight low power 32K X 8 CMOS Static RAMs in leadless chip carrier packages.

Contextual Info: □PM DPS256S8AN Dense-Pac Microsystems, Inc. H IGH SPEED MILITARY 256K X 8 C M O S SRAM M O D ULE O ADVANCED INFORM ATION DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K X 8 monolithic

Contextual Info: ✓ DPS256S8N MILITARY 256K X 8 CMOS SRAM MODULE D ESC R IPT IO N : The DPS256S8N is a Military 256K X 8 high-density, low-power static RAM module comprised of two ceramic 128K X 8 monolithic SRAM's, an advanced high-speed C M O S d e co d e r and decoupling

72108A

Contextual Info: GS72108AGP TSOP Commercial Temp Industrial Temp 7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 256K x 8 2Mb Asynchronous SRAM Features TSOP-II 256K x 8-Pin Configuration • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/115/95/80 mA at minimum

GS72108

Abstract: GS72108TP-10 GS72108TP-10I GS72108TP-12 GS72108TP-12I GS72108TP-15 GS72108TP-8 GS72108TP-8I
Contextual Info: GS72108TP/J SOJ, TSOP Commercial Temp Industrial Temp 256K x 8 2Mb Asynchronous SRAM Features 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ 256K x 8-Pin Configuration • Fast access time: 8, 10, 12, 15 ns • CMOS low power operation: 150/125/110/90 mA at

Contextual Info: GS72108ATP TSOP Commercial Temp Industrial Temp 7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 256K x 8 2Mb Asynchronous SRAM Features TSOP-II 256K x 8-Pin Configuration • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/115/95/80 mA at minimum

84-1MISR4

Abstract: CY7C1399 CY7C199 EME-6300 JESD22 7C1599C
Contextual Info: Cypress Semiconductor Qualification Report QTP# 96423/97126, VERSION 1.1 June, 1997 256K SRAM, R3 Technology, Fab 4 Qualification CY7C1399 32K x 8, 3.3V Static RAM CY7C199 32K x 8, 5V Static RAM Cypress Semiconductor 256K SRAM, R3 Technology, Fab 4 Devices:CY7C1399/CY7C199

A67L73361

Abstract: A67L83181
Contextual Info: A67L83181/A67L73361 Preliminary 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 8, 2005 Preliminary

ua 471

Abstract: GS72108A GS72108ATP GS72108ATP-10 GS72108ATP-10I GS72108ATP-12 GS72108ATP-7 GS72108ATP78I GS72108ATP-8 GS72108ATP-8I
Contextual Info: GS72108ATP TSOP Commercial Temp Industrial Temp 7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 256K x 8 2Mb Asynchronous SRAM Features TSOP-II 256K x 8-Pin Configuration • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/115/95/80 mA at minimum

SAM25

Abstract: m5412222 Sam 44
Contextual Info: O K I Semiconductor Product Overview Product Overview MSM54C864 r| 512K j— I 64K x 8 MSM54C865 r I MSM514252A I 256K x 4 h i-L— H MSM514262 D O ' H MSM518121A~ H 128K x 8 hi 1MSM518122 Multiport | I MSM548262 256K x 8 h{ 2M I MSM548263