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    DALLAS SEMICONDUCTOR Ds12887

    Abstract: f422 240331 82C42PE 240332 CL-GD6245 R300EX microcontroller schematic of ds12887 transistor f422 transistor f422 equivalent
    Text: A AP-727 APPLICATION NOTE EXPLR1 Embedded PC Evaluation Platform Application Note Curt Durrant Technical Marketing Engineer Intel Corporation Mail Stop CH6-302 5000 W. Chandler Blvd. Chandler, Arizona 85226 September 22, 1995 Order Number: 272777-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability


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    PDF AP-727 CH6-302 Intel386 Intel386TM DALLAS SEMICONDUCTOR Ds12887 f422 240331 82C42PE 240332 CL-GD6245 R300EX microcontroller schematic of ds12887 transistor f422 transistor f422 equivalent

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


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    PDF ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC

    TDQ40

    Abstract: No abstract text available
    Text: SGRAM MODULE KMM966G512BQ P N KMM966G512BQ(P)N SGRAM SODIMM 512Kx64 SGRAM SODIMM based on 256Kx32,1K Refresh, 3.3V Synchronous Graphie RAMs FEATURES GENERAL DESCRIPTION • Performance Range Part NO. Max. Freq. (tee) I KMM966G512BQ(P)N-G8 125MHz (8ns) @CL=3


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    PDF KMM966G512BQ 512Kx64 256Kx32 512bit 100pin 144pin KMM966G5128Q TDQ40

    256kx32

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
    Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


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    PDF EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory


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    PDF EDI8L32256C 256KX32 EDI8L32256C 20and TMS320C3x, TMS320C4x DSP96002

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ED I8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS, INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static SRAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


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    PDF I8L32256V 256Kx32 EDI8L32256V 21060L 21062L TMS320LC31 TMS320LC31,

    EDI7F32256C100BAC

    Abstract: No abstract text available
    Text: W D EDI7F322S6C I El£CTRONC OE5N5NS INC TheEDI7F32256C, EDI7F232256C are organized as 256Kx 32and2 x 256Kx32 respectively. Both modules are based on ATMELAT29C020 -256Kx 8 Flashdevices iiTSOP packages which are mounted on an FR4 substrate. When deselected, the CMOS standby current is less than


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    PDF EDI7F322S6C TheEDI7F32256C, EDI7F232256C 256Kx 32and2 256Kx32 ATMELAT29C020 -256Kx 100pAperByte addresslocatio20 EDI7F32256C100BAC

    dram zip 256kx16

    Abstract: No abstract text available
    Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5


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    PDF DPS1MS16P/XP 150ns, DPS512S8H4 DPS512S8P/Pt/PLL DPS512S8Ü DPS256X24P DPS256S32W DPS256X32L/W 512Kx16, 256Kx32 dram zip 256kx16

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION AK632256AW 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory MICROCIRCUIT CORPORATION The Accutek AK632256AW SRAM Module consists of eight fast high performance SRAMs mounted on a low profile, 64 pin SIM PCB. The module utilizes four 28 pin 256K x 4 SRAMs in 300 mil


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    PDF AK632256AW