256MDRAM Search Results

39S256160T

Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Contextual Info: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled

PC100-322-620

Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

39S256160T

Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
Contextual Info: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge

39S256160DT-7

Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
Contextual Info: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166

Contextual Info: # H YB39S256400/800/160T 256MBit Synchronous DRAM In fin eon 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8A -8B Units fC K 125 125 100 M Hz tC K 3 8 8 10 ns tA C 3 6 6 6 ns tC K 2 10 12 15 ns tA C 2

PC100-322-620

Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

PC133 registered reference design

Contextual Info: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns

PC100-222-620

Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8

P-TSOPII-54

Abstract: PC133 registered reference design
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns tCK2 10 10 ns tAC2 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

PC100-322-620

Abstract: Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider P-TSOPII-54 PC133 registered reference design
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

PC100-322-620

Abstract: P-TSOPII-54 PC133 registered reference design
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

Contextual Info: HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write

Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

MARKING CAW

Abstract: P-TSOPII-54
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature