256X1024 Search Results

Contextual Info: CY7C277 '# C Y P R E S S Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 30-ns address set-up — 15-ns dock to output • Low power — 660 mW commercial — 715 mW (military) • Programmable address latch enable

Contextual Info: HM6207H Series 5.0 V Supply 262,144-word x 1-bit High Speed CMOS Static RAM co" ;fj|?, > > > > > > > > ^ • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

Contextual Info: STK15C88 32K x 8 AutoStoré nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK15C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element

AVR 8515 microcontroller

Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Contextual Info: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit

V9990

Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
Contextual Info: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.

Contextual Info: CY7C277 CYPRESS SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed Reprogrammable 32K x 8 Registered PROM • Programmable address latch enable input 5V ±10% V cc, commercial and military • Programmable synchronous or

c28w

Contextual Info: Kp \ f { ft:'> h C 2 5 6 8 i .i )R ,2 K k B S i i A ivi 32K X 8 SRAM FEATURES • • • • • • • • • Access tim es o f 12,15,20 ns Fast output enable (tDOE) for cache applications Low active power: 400 niW (Typical) Low standby power Fully static operation, no clock or refresh required

Contextual Info: Issue 1.0: September 1989 MSM464T/V-25/35 64 K x 4 Monolithic BiCMOS SRAM MSM464T/V 19 : ADVANCE PRODUCT INFORMATION 65,536 x 4 BiCMOS High Speed Static RAM Definitions Features Package Type.T'.’V’

Contextual Info: STK15C88 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM SimTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Store to EEPROM Initiated by Software or AutoStore™ on Power Down The Simtek STK15C88 is a fast static RAM with a

D41464c

Abstract: D41464 NEC D41464 PD41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15
Contextual Info: NEC ¿/PD41464 6 5 ,5 3 6 X 4 -B IT D Y N A M IC NMOS RAM NEC Electronics Inc. Novem ber 1987 D e s c rip tio n The //PD41464 is a 65,536-word by 4-b it dynam ic Nchartnel MOS random access m em ory RAM designed to operate from a single + 5 -v o lt pow er supply. The

Contextual Info: STK11C88 32K x 8 nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Sirrrtek STK11C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element incorporated in each static memory cell. The SRAM

MB88F332

Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
Contextual Info: MB88F332 LSI Product Specifications 3th December, 2008 Edition 0.981 FUJITSU PROPRIETARY AND CONFIDENTIAL MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.

7c271a

Contextual Info: CY7C271A PRELIMINARY 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military)

Contextual Info: >£ 64 K X 4 Monolithic CMOS SRAM molale M o sa ic S e m ic o n d u c to r inc. MSM464T/V/W-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Pin D efinitions Package T y p e ^ .V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Une Package

Contextual Info: Issue 1.0: September 1989 MSM464T/V-45/55 64 K X 4 Monolithic CMOS SRAM MSM464T/V ADVANCE PRODUCT INFORMATION 65,536 x 4 CMOS High Speed Static RAM ^ Features Pin Definitions Memory Array 1 2 3 4 5 6 7 8 9 C c c C f= i= c l= c A9 10 1= □ □ =1 □ □ □

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

HY638256

Abstract: HY638256J-15
Contextual Info: HY638256 Series 32Kx8bit CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode

Contextual Info: MSM464T/V-25/35 Issue 1.0: September 1989 64 K x 4 M o n o l it h i c B i C M O S S R A M MSM464T/V ADVANCE PRODUCT INFORMATION 65,536 x 4 BiCMOS High Speed Static RAM Pin Definitions Features Package Type: T 7 V Very Fast Access Times of 25/35 nS Standard 24 pin DIL Footprint

pin diagram ic 7420

Abstract: UCS 1903 MSM6324
Contextual Info: 32/C X 6 SR A M m o l a MSM832-020/025/35 t e Issue 1.1 : June 1993 ADVANCE PRODUCT INFORMATION Sem iconductor 32,768 X 8 CMOS High Speed Static RAM Pin Definition Package Type: 'G \ *S', T , V Features Access Times of 020/025/35 ns Standard 28 pin DIL footprint.

464M

Abstract: 28 pad leadless
Contextual Info: 64 K X 4 Monolithic CMOS SRAM molaic S e m ic o n d u c to r MSM464T/WW-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Inc. Pin Definitions Package T yp e:T ,V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Line Package

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)

Contextual Info: Prelim inary HM10500 Series 262,144 Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION HM10500-15 is EC L1 0K compatible, 262,144-words x 1-bit, read/ write random access memory developed for high speed systems such as main memories for super computers.

HM6207HLP-35

Abstract: HM6207HLP-25
Contextual Info: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 jlW (typ) 30 jitW (typ) (L-version)